SQ4282EY-T1_BE3

SQ4282EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET FEATURES SO-8 Dual D1 8 D1 7 D2 6 D2 5 • TrenchFET® Power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested Top View 2 1 G1 S1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 4 3 G2 S2 D1 D2 PRODUCT SUMMARY VDS (V) G1 30 RDS(on) (Ω) at VGS = 10 V 0.0123 RDS(on) (Ω) at VGS = 4.5 V 0.0135 ID (A) G2 S1 S2 N-Channel MOSFET N-Channel MOSFET 8 Configuration Dual ORDERING INFORMATION Package SO-8 Lead (Pb)-free and halogen-free SQ4282EY (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 30 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a ID TC = 125 °C Continuous source current (diode conduction) Pulsed drain currenta Single pulse avalanche current Single pulse avalanche energy Maximum power dissipationa L = 0.1 mH TC = 25 °C Operating junction and storage temperature range 8 3.5 IDM 32 IAS 34 EAS 58 TJ, Tstg V 8 IS PD TC = 125 °C UNIT 3.9 1.3 - 55 to + 175 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-foot (drain) PCB mount b SYMBOL LIMIT RthJA 120 RthJF 38 UNIT °C/W Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. When mounted on 1" square PCB (FR-4 material) S21-0375-Rev. C, 23-Apr-2021 Document Number: 63582 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4282EY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage 30 - - 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA IGSS Zero gate voltage drain current transconductance b VDS VGS(th) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 30 V - - 1 VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 30 V, TJ = 175 °C - - 250 VGS = 10 V VDS ≥ 5 V 30 - - VGS = 10 V ID = 15 A - 0.0100 0.0123 VGS = 10 V ID = 15 A, TJ = 125 °C - - 0.0176 VGS = 10 V ID = 15 A, TJ = 175 °C - - 0.0210 VGS = 4.5 V ID = 14 A - 0.0110 0.0135 - 67 - - 1893 2367 - 396 495 - 139 173 VDS = 15 V, ID = 15 A V nA μA A Ω S Dynamicb Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Rg Fall ime c Source-Drain Diode Ratings and VDS = 15 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 11 A f = 1 MHz td(on) tr Turn-off delay time c VGS = 0 V td(off) VDD = 15 V, RL = 1.67 Ω ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω tf - 31.5 47 - 6.4 - - 4 - 2.45 4.91 7.5 - 10 15 - 11 17 - 34 51 - 8 12 pF nC Ω ns Characteristics b Pulsed current a ISM Forward voltage VSD IF = 8 A, VGS = 0 V - - 32 A - 0.76 1.2 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0375-Rev. C, 23-Apr-2021 Document Number: 63582 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4282EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 60 50 VGS = 10 V thru 4 V 40 ID - Drain Current (A) ID - Drain Current (A) 48 36 24 12 0 2 4 6 8 20 TC = 125 °C 10 VGS = 3 V 0 30 TC = - 55 °C 0 10 TC = 25 °C 0 VDS - Drain-to-Source Voltage (V) Output Characteristics 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 Transfer Characteristics 1.0 100 TC = - 55 °C 0.6 TC = 25 °C 0.4 0.2 TC = 125 °C 0.0 TC = 25 °C 80 gfs - Transconductance (S) ID - Drain Current (A) 0.8 60 TC = 125 °C 40 20 TC = - 55 °C 0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 0 10 15 ID - Drain Current (A) 20 25 6 12 18 24 VDS - Drain-to-Source Voltage (V) 30 Transconductance 0.025 2500 0.020 2000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Transfer Characteristics 5 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 Ciss 1500 1000 Coss 500 Crss 0.000 0 8 16 24 32 ID - Drain Current (A) On-Resistance vs. Drain Current S21-0375-Rev. C, 23-Apr-2021 40 0 0 Capacitance Document Number: 63582 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4282EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 11 A 8 6 4 2 0 0 8 16 24 32 Qg - Total Gate Charge (nC) VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0.5 - 50 - 25 40 Gate Charge 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 On-Resistance vs. Junction Temperature 0.10 100 10 0.08 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 15 A 1.7 1 TJ = 25 °C 0.1 0.06 0.04 TJ = 150 °C 0.02 0.01 TJ = 25 °C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0.00 1.2 Source Drain Diode Forward Voltage 10 40 VDS - Drain-to-Source Voltage (V) 0.3 VGS(th) Variance (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 0.7 - 0.1 ID = 5 mA - 0.5 - 0.9 - 1.3 - 50 - 25 0 ID = 250 μA 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S21-0375-Rev. C, 23-Apr-2021 125 150 175 38 ID = 1 mA 36 34 32 30 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 63582 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4282EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited Limited by RDS(on)a 1 ms ID - Drain Current (A) 10 10 ms ID Limited 1 100 ms 0.1 BVDSS Limited 1s 10s, DC TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S21-0375-Rev. C, 23-Apr-2021 Document Number: 63582 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4282EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63582. S21-0375-Rev. C, 23-Apr-2021 Document Number: 63582 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000