Work-In-Progress
SQ4483BEEY
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Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
-30
RDS(on) (Ω) at VGS = -10 V
0.0085
• AEC-Q101 qualified
RDS(on) (Ω) at VGS = -4.5 V
0.0200
• ESD Protection: 3000 V
ID (A)
• 100 % UIS tested
-22
Configuration
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Single
SO-8 Single
D
8
D
7
D
6
D
5
S
Top View
1
S
2
S
3
S
4
G
G
5400
P-Channel
D
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and Halogen-free
SQ4483BEEY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
L = 10 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
-22
-13
IS
-6
IDM
-84
IAS
-7
EAS
245
PD
UNIT
7
2
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
85
RthJF
21
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mount b
°C/W
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
SPending-Rev. C, 24-Jul-15
Document Number: 67097
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Work-In-Progress
SQ4483BEEY
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = -250 μA
-30
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-2.0
-2.5
VDS = 0 V, VGS = ± 20 V
-
-
±1
VDS = 0 V, VGS = ± 12 V
-
-
±2
VDS = -30 V
-
-
-1
VDS = -30 V, TJ = 125 °C
-
-
-50
-
-
-150
-30
-
-
-
0.0070
0.0085
Gate-Source Leakage
IGSS
VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VGS = 0 V
VDS = -30 V, TJ = 175 °C
On-State Drain Current a
ID(on)
VGS = -10 V
VDS ≤ -5 V
VGS = -10 V
ID = -10 A
Drain-Source On-State Resistance a
Forward
Transconductance b
RDS(on)
gfs
V
mA
μA
A
VGS = -10 V
ID = -10 A, TJ = 125 °C
-
-
0.0130
VGS = -10 V
ID = -10 A, TJ = 175 °C
-
-
0.0150
VGS = -4.5 V
ID = -7 A
-
0.0160
0.0200
-
32
-
S
-
712
890
pF
-
75
113
VDS = -10 V, ID = -10 A
Ω
Dynamic b
Output Capacitance
Coss
Total Gate Charge c
Qg
VGS = 0 V
VDS = -15 V, f = 1 MHz
Gate-Source Charge c
Qgs
-
9.5
-
Gate-Drain Charge c
Qgd
-
19
-
Turn-On Delay Time c
td(on)
-
38
57
-
82
123
-
134
201
-
178
214
Rise Time c
Turn-Off Delay Time c
Fall Time c
tr
td(off)
VGS = -10 V
VDS = -15 V, ID = -10 A
VDD = -15 V, RL = 1.5 Ω
ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω
tf
nC
μs
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = -3 A, VGS = 0 V
-
-
-84
A
-
-0.75
-1.2
V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPending-Rev. C, 24-Jul-15
Document Number: 67097
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Work-In-Progress
SQ4483BEEY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.005
10-2
10-3
TJ = 25 °C
10-4
IGSS - Gate Current (A)
IGSS - Gate Current (A)
0.004
0.003
0.002
10-5
TJ = 150 °C
10-6
10-7
TJ = 25 °C
10-8
0.001
10-9
10-10
0.000
0
7
14
21
28
35
0
6
VGS - Gate-to-Source Voltage (V)
12
18
24
30
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
70
70
VGS = 10 V thru 4 V
56
VGS = 3 V
ID - Drain Current (A)
ID - Drain Current (A)
56
42
28
14
42
TC = 25 °C
28
14
TC = 125 °C
TC = - 55 °C
0
0
0
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
0
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
3000
0.05
0.04
2400
VGS = 4.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1
0.03
0.02
VGS = 10 V
0.01
1800
1200
Coss
600
0
0.00
0
14
28
42
ID - Drain Current (A)
56
On-Resistance vs. Drain Current
SPending-Rev. C, 24-Jul-15
70
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
30
Capacitance
Document Number: 67097
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Work-In-Progress
SQ4483BEEY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
10
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 10 A
8
VDS = 15 V
6
4
2
0
0
20
40
60
80
Qg - Total Gate Charge (nC)
ID = 10 A
1.7
VGS = 10 V
1.4
VGS = 4.5 V
1.1
0.8
0.5
- 50
100
25
50
75
100
125 150
175
On-Resistance vs. Junction Temperature
0.10
10
0.08
RDS(on) - On-Resistance (Ω)
100
TJ = 150 °C
IS - Source Current (A)
0
TJ - Junction Temperature (°C)
Gate Charge
1
TJ = 25 °C
0.1
0.01
0.001
0.0
- 25
0.06
0.04
0.02
TJ = 25 °C
TJ = 150 °C
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0.00
1.2
0
Source Drain Diode Forward Voltage
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
- 28
1.0
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
VGS(th) Variance (V)
0.7
ID = 250 μA
0.4
ID = 5 mA
0.1
- 0.2
- 0.5
- 50 - 25
0
25
50
75 100 125
TJ - Temperature (°C)
Threshold Voltage
SPending-Rev. C, 24-Jul-15
150
175
- 30
- 32
- 34
- 36
- 38
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 67097
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Work-In-Progress
SQ4483BEEY
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
100 μs
Limited by RDS(on)*
1 ms
10
10 ms
1
0.1
100ms
1s
10 s, DC
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
SPending-Rev. C, 24-Jul-15
Document Number: 67097
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Work-In-Progress
SQ4483BEEY
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67097.
SPending-Rev. C, 24-Jul-15
Document Number: 67097
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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Revision: 09-Jul-2021
1
Document Number: 91000