SQ4840EY
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
SO-8 Single
D
8
D
6
D
7
• TrenchFET® power MOSFET
D
5
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Top View
1
S
2
S
3
S
4
G
D
PRODUCT SUMMARY
VDS (V)
G
40
RDS(on) (Ω) at VGS = 10 V
0.009
RDS(on) (Ω) at VGS = 4.5 V
0.012
ID (A)
S
N-Channel MOSFET
20.7
Configuration
Single
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and halogen-free
SQ4840EY
(for detailed order number please see www.vishay.com/doc?79771)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
40
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current
a
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation a
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
12
6.5
IDM
82
IAS
30
PD
V
20.7
IS
EAS
UNIT
45
7.1
2.4
A
mJ
W
TJ, Tstg
-55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
85
RthJF
21
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount b
°C/W
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. When mounted on 1" square PCB (FR-4 material)
S21-0849-Rev. E, 16-Aug-2021
Document Number: 68669
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4840EY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 , ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
1.0
Zero gate voltage drain current
IDSS
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
On-state drain current a
Drain-source on-state resistance a
Forward
transconductance b
ID(on)
RDS(on)
gfs
VGS = 0 V
VDS = 40 V
-
-
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS ≥ 5 V
30
-
-
VGS = 10 V
ID = 14 A
-
0.0075
0.009
VGS = 10 V
ID = 14 A, TC = 125 °C
-
-
0.014
VGS = 10 V
ID = 14 A, TC = 175 °C
-
-
0.018
VGS = 4.5 V
ID = 12 A
-
0.010
0.012
-
45
-
VDS = 15 V, ID = 14 A
V
nA
μA
A
Ω
S
Dynamicb
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain
charge c
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
VGS = 0 V
VDS = 20 V, f = 1 MHz
VGS = 10 V
VDS = 20 V, ID = 14 A
Qgd
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = 20 V, RL = 20 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
tf
-
1950
2440
-
505
630
-
220
280
-
41
62
-
5.5
-
-
8.7
-
0.2
-
1.6
-
14
21
pF
nC
Ω
-
11
17
-
45
68
-
17
26
-
-
82
A
-
0.75
1.1
V
ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed current a
ISM
Forward voltage
VSD
IF = 2.8 A, VGS = 0
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0849-Rev. E, 16-Aug-2021
Document Number: 68669
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4840EY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
50
50
V GS = 10 V thru 4 V
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
V GS = 3 V
10
30
20
T C = 25 °C
10
T C = 125 °C
T C = - 55 °C
0
0
0
2
4
6
8
V DS - Drain-to-Source Voltage (V)
0
10
1
2
3
4
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.025
64
R DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
80
T C = - 55 °C
48
T C = 25 °C
32
T C = 125 °C
16
0
0
4
8
12
16
20
24
28
0.020
0.015
V GS = 4.5 V
0.010
V GS = 10 V
0.005
0.000
0
ID - Drain Current (A)
10
Transconductance
20
30
ID - Drain Current (A)
40
50
On-Resistance vs. Drain Current
3000
10
ID = 14 A
VGS - Gate-to-Source Voltage (V)
2500
Ciss
C - Capacitance (pF)
5
2000
1500
Coss
1000
500
8
V DS = 20 V
6
4
2
Crss
0
0
10
20
30
V DS - Drain-to-Source Voltage (V)
Capacitance
S21-0849-Rev. E, 16-Aug-2021
40
0
0
5
10
15
20
25
30
35
Qg - Total Gate Charge (nC)
40
45
Gate Charge
Document Number: 68669
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4840EY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 14 A
V GS = 10 V
10
1.7
1.4
I S - Source Current (A)
R DS(on) - On-Resistance (Normalized)
2.0
V GS = 4.5 V
1.1
T J = 150 °C
1
T J = 25 °C
0.1
0.01
0.8
0.5
- 50
- 25
0
25
50
75
100
125
150
175
0.001
0.0
0.2
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1.2
Source Drain Diode Forward Voltage
0.10
0.4
0.08
0
VGS(th) Variance (V)
R DS(on) - On-Resistance (Ω)
0.4
0.6
0.8
1.0
V SD - Source-to-Drain Voltage (V)
0.06
0.04
TJ = 125 °C
- 0.4
ID = 5 mA
- 0.8
0.02
ID = 250 μA
TJ = 25 °C
0
0
1
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage (V)
9
10
- 1.2
- 50
- 25
0
On-Resistance vs. Gate-to-Source Voltage
25
50
75 100
T J - Temperature (°C)
125
150
175
Threshold Voltage
VDS - Drain-to-Source Voltage (V)
54
ID = 1 mA
52
50
48
46
44
- 50
- 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S21-0849-Rev. E, 16-Aug-2021
Document Number: 68669
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4840EY
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
100
ID - Drain Current (A)
Limited by RDS(on)*
100 µs
10
1 ms
10 ms
1
100 ms
1s
10 s, DC
0.1
TC = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S21-0849-Rev. E, 16-Aug-2021
Document Number: 68669
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4840EY
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68669.
S21-0849-Rev. E, 16-Aug-2021
Document Number: 68669
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2022
1
Document Number: 91000
