SQ4917EY-T1_GE3

SQ4917EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET FEATURES SO-8 Dual D1 8 D1 7 D2 6 • TrenchFET® power MOSFET D2 5 • AEC-Q101 qualified c • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View 2 1 G1 S1 4 3 G2 S2 S1 G1 S2 G2 PRODUCT SUMMARY VDS (V) -60 RDS(on) (Ω) at VGS = -10 V 0.0480 RDS(on) (Ω) at VGS = -4.5 V 0.0612 ID (A) per leg -8 Configuration Dual D1 D2 P-Channel MOSFET P-Channel MOSFET ORDERING INFORMATION Package SO-8 Lead (Pb)-free and halogen-free SQ4917EY (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -60 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C TC = 125 °C IS Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a ID L = 0.1 mH TC = 25 °C TC = 125 °C -4.75 -4.5 -32 IAS -22.4 EAS 25 TJ, Tstg Operating junction and storage temperature range V -8 IDM PD UNIT 5 1.67 -55 to +175 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-foot (drain) PCB mount b SYMBOL LIMIT RthJA 110 RthJF 30 UNIT °C/W Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. When mounted on 1" square PCB (FR-4 material) c. Parametric verification ongoing S21-0375-Rev. C, 23-Apr-2021 Document Number: 62785 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4917EY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = -250 μA -60 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 -1 UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b IDSS ID(on) RDS(on) gfs VGS = 0 V VDS = -60 V - - VGS = 0 V VDS = -60 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -60 V, TJ = 175 °C - - -150 VGS = -10 V VDS ≤ -5 V -30 - - VGS = -10 V ID = -4.3 A - 0.0400 0.0480 VGS = -10 V ID = -4.3 A, TJ = 125 °C - - 0.0780 VGS = -10 V ID = -4.3 A, TJ = 175 °C - - 0.0960 VGS = -4.5 V ID = -3.8 A - 0.0510 0.0612 - 13 - - 1530 1910 VDS = -15 V, ID = -4.3 A V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Rg Turn-on delay time c Rise time c Turn-off delay Fall time c VGS = -10 V VDS = -30 V, f = 1 MHz VDS = -30 V, ID = -5 A f = 1 MHz td(on) tr time c VGS = 0 V td(off) VDD = -30 V, RL = 8.8 Ω ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics - 334 417 - 114 142 - 43.4 65 - 4.7 - - 9 - 1.3 2.5 4 - 11 17 pF nC Ω - 11 17 - 35 52 - 6 9 - - -32 A - -0.8 -1.2 V ns b Pulsed current a ISM Forward voltage VSD IF = -2.8 A, VGS = 0 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0375-Rev. C, 23-Apr-2021 Document Number: 62785 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4917EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 30 30 24 VGS = 10 V thru 4 V ID - Drain Current (A) ID - Drain Current (A) 24 18 12 6 18 TC = 25 °C 12 6 VGS = 3 V TC = 125 °C TC = - 55 °C 0 0 0 2 4 6 8 0 10 2 VDS - Drain-to-Source Voltage (V) 4 6 10 25 8 20 gfs - Transconductance (S) TC = 25 °C ID - Drain Current (A) 10 Transfer Characteristics Output Characteristics 6 TC = 25 °C 4 2 8 VGS - Gate-to-Source Voltage (V) TC = 125 °C TC = - 55 °C 15 TC = 125 °C 10 5 TC = - 55 °C 0 0 0 1 2 3 4 0 5 2 4 3000 0.12 2400 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.15 0.09 VGS = 4.5 V 0.03 8 10 Transconductance Transfer Characteristics 0.06 6 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) 1800 Ciss 1200 600 VGS = 10 V Coss Crss 0.00 0 0 6 12 18 24 ID - Drain Current (A) On-Resistance vs. Drain Current S21-0375-Rev. C, 23-Apr-2021 30 0 12 24 36 48 60 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62785 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4917EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 10 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 5 A VDS = 30 V 8 6 4 2 9 18 27 36 45 VGS = 4.5 V 1.1 0.8 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 On-Resistance vs. Junction Temperature 100 0.5 10 0.4 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 25 TJ - Junction Temperature (°C) Gate Charge TJ = 150 °C 1 TJ = 25 °C 0.1 VGS = 10 V 1.4 0.5 - 50 - 25 0 0 ID = 3.5 A 1.7 0.3 0.2 0.01 0.1 0.001 0.0 TJ = 150 °C TJ = 25 °C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VSD - Source-to-Drain Voltage (V) 6 8 10 On-Resistance vs. Gate-to-Source Voltage - 60 0.9 VDS - Drain-to-Source Voltage (V) ID = 1 mA 0.7 VGS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage ID = 250 μA 0.5 0.3 ID = 5 mA 0.1 - 0.1 - 0.3 - 50 - 25 2 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S21-0375-Rev. C, 23-Apr-2021 125 150 175 - 65 - 70 - 75 - 80 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 62785 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4917EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 100 μs a Limited by RDS(on) 1 ms 1 10 ms 100 ms 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 1s 10 s, DC 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S21-0375-Rev. C, 23-Apr-2021 Document Number: 62785 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4917EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 105 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62785. S21-0375-Rev. C, 23-Apr-2021 Document Number: 62785 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000