SQ4940AEY-T1_GE3

SQ4940AEY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET FEATURES SO-8 Dual D1 8 D1 7 D2 6 • TrenchFET® power MOSFET D2 5 • 100 % Rg and UIS tested • AEC-Q101 qualified d • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View 2 1 G1 S1 4 3 G2 S2 D1 PRODUCT SUMMARY D2 G1 VDS (V) G2 40 RDS(on) (Ω) at VGS = 10 V 0.024 RDS(on) (Ω) at VGS = 4.5 V 0.029 S1 S2 8 N-Channel MOSFET N-Channel MOSFET ID (A) Configuration Dual ORDERING INFORMATION Package SO-8 Lead (Pb)-free and halogen-free SQ4940AEY (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a ID TC = 125 °C Continuous source current (diode conduction) 5.3 3.6 Pulsed drain current b IDM 32 Single pulse avalanche current IAS 17 EAS 15 Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range V 8 IS Single pulse avalanche energy UNIT PD 4 1.3 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 112 RthJF 38 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-foot (drain) PCB mount c °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR-4 material) d. Parametric verification ongoing S21-0375-Rev. B, 23-Apr-2021 Document Number: 62916 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4940AEY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 55 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 VGS = 10 V VDS ≥ 5 V 30 - - VGS = 10 V ID = 5.3 A - 0.020 0.024 VGS = 0 V Zero gate voltage drain current On-state drain current a IDSS ID(on) Drain-source on-state resistance a RDS(on) Forward transconductance b gfs VGS = 10 V ID = 5.3 A, TJ = 125 °C - - 0.036 VGS = 10 V ID = 5.3 A, TJ = 175 °C - - 0.043 VGS = 4.5 V ID = 4.9 A - 0.024 0.029 - 33 - VDS = 15 V, ID = 5.3 A V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rg VGS = 0 V VDS = 20 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 5.7 A f = 1 MHz td(on) Rise time c tr Turn-off delay time c td(off) Fall time c tf VDD = 20 V, RL = 3.5 Ω ID ≅ 5.7 A, VGEN = 10 V, Rg = 1 Ω Source-Drain Diode Ratings and Pulsed current a Forward voltage 593 741 103 129 - 44 55 - 28.4 43 - 4 - - 6 - 0.5 - 2 - 8 12 - 13 20 - 20 30 - 9 14 pF nC Ω ns Characteristics b ISM VSD - IF = 3.6 A, VGS = 0 V - - 32 A - 0.75 1.1 V Notes e. a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0375-Rev. B, 23-Apr-2021 Document Number: 62916 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4940AEY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 30 30 VGS = 10 V thru 4 V 24 ID - Drain Current (A) ID - Drain Current (A) 24 18 12 VGS = 3 V 6 18 TC = 25 °C 12 6 TC = 125 °C TC = - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 10 75 8 60 gfs - Transconductance (S) ID - Drain Current (A) TC = 25 °C 6 TC = 25 °C 4 2 TC = 125 °C TC = - 55 °C 45 30 TC = 125 °C 15 TC = - 55 °C 0 0 0 1 2 3 4 0 5 2 4 VGS - Gate-to-Source Voltage (V) 1500 0.04 1200 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.05 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0.00 6 12 18 24 ID - Drain Current (A) On-Resistance vs. Drain Current S21-0375-Rev. B, 23-Apr-2021 10 900 Ciss 600 300 0 8 Transconductance Transfer Characteristics 0.03 6 ID - Drain Current (A) 30 Coss Crss 0 0 5 10 15 20 25 30 35 40 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62916 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4940AEY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 5.7 A VDS = 20 V 8 6 4 2 0 0 5 10 15 20 25 ID = 7.4 A 1.7 VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0.5 - 50 - 25 30 0 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Gate Charge 100 0.20 10 0.16 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 25 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) TJ = 150 °C 1 0.1 TJ = 25 °C 0.12 0.08 0.01 0.04 0.001 0.00 TJ = 25 °C TJ = 150 °C 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) 0.5 VDS - Drain-to-Source Voltage (V) 52 0.2 VGS(th) Variance (V) 4 On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage ID = 5 mA - 0.1 ID = 250 μA - 0.4 - 0.7 - 1.0 - 50 - 25 2 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S21-0375-Rev. B, 23-Apr-2021 125 150 175 50 ID = 1 mA 48 46 44 42 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 62916 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4940AEY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited 100 μs ID - Drain Current (A) a 10 Limited by RDS(on) 1 ms ID Limited 1 10 ms 100 ms 0.1 1 s, 10 s, DC TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S21-0375-Rev. B, 23-Apr-2021 Document Number: 62916 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4940AEY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 0.01 10 -4 4. Surface Mounted Single Pulse 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62916. S21-0375-Rev. B, 23-Apr-2021 Document Number: 62916 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000