SQ7415AENW
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Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® 1212-8W Single
D
5
D
6
D
7
• TrenchFET® power MOSFET
D
8
• Low thermal resistance PowerPAK® 1212-8W
package with 1.07 mm profile
• AEC-Q101 qualified
• Wettable flank terminals
• 100 % Rg and UIS tested
3.
3
m
m
3.3
1
mm
Top View
4
G
Bottom View
3
S
2
S
1
S
• Material categorization:
for
definitions
of
compliance
www.vishay.com/doc?99912
please
see
S
Marking code: Q021
PRODUCT SUMMARY
VDS (V)
G
-60
RDS(on) () at VGS = -10 V
0.065
RDS(on) () at VGS = -4.5 V
0.090
ID (A)
P-Channel MOSFET
-16
Configuration
D
Single
Package
PowerPAK 1212-8W
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-60
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C a
TC = 125 °C
Continuous source current (diode conduction)a
Pulsed drain current
b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
V
-16
ID
-11
IS
-16
IDM
-64
IAS
-23
EAS
26
53
PD
TJ, Tstg
UNIT
17
-55 to +175
Soldering recommendations (peak temperature) d
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB Mount c
SYMBOL
LIMIT
RthJA
81
RthJC
2.8
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S20-0765, Rev. B, 12-Oct-2020
Document Number: 76598
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SQ7415AENW
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0 V, ID = -250 μA
-60
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-2.0
-2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = -60 V
-
-
-1
-
-
-50
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = -60 V, TJ = 125 °C
VGS = 0 V
VDS = -60 V, TJ = 175 °C
-
-
-150
On-state drain current a
ID(on)
VGS = -10 V
VDS -5 V
-15
-
-
VGS = -10 V
ID = -5.7 A
-
0.050
0.065
Drain-source on-state resistance a
Forward transconductance b
RDS(on)
gfs
VGS = -10 V
ID = -5.7 A, TJ = 125 °C
-
-
0.112
VGS = -10 V
ID = -5.7 A, TJ = 175 °C
-
-
0.138
VGS = -4.5 V
ID = -4.4 A,
VDS = -15 V, ID = -5.7 A
-
0.070
0.090
-
13
-
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate
charge c
Gate-source charge c
Gate-drain
charge c
Gate resistance
Turn-on delay time c
Rise
time c
Turn-off delay time c
Fall time c
Source-drain diode ratings and
VGS = 0 V
VDS = -25 V, f = 1 MHz
Qg
Qgs
VGS = -10 V
VDS = -30 V, ID = -5.7 A
Qgd
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = -30 V, RL = 30
ID -1 A, VGEN = -10 V, Rg = 1
tf
-
1108
1385
-
132
165
-
84
105
-
25.5
38
-
3.6
-
-
6.7
-
3
6
9
-
9
14
pF
nC
-
9
14
-
37
56
-
8
12
-
-
-64
A
-
-0.85
-1.2
V
ns
characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = -6 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S20-0765, Rev. B, 12-Oct-2020
Document Number: 76598
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ7415AENW
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
20
18
VGS = 10 V thru 5 V
15
VGS = 4 V
ID - Drain Current (A)
ID - Drain Current (A)
16
12
8
4
9
TC = 25 °C
6
3
VGS = 2 V
VGS = 3 V
12
TC = 125 °C
0
TC = - 55 °C
0
0
1
2
3
4
0
5
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
2.0
20
TC = - 55 °C
TC = 25 °C
16
gfs - Transconductance (S)
ID - Drain Current (A)
1.6
1.2
TC = 25 °C
0.8
0.4
TC = 125 °C
TC = 125 °C
12
8
4
TC = - 55 °C
0.0
0
0
1
2
3
4
5
0
3
0.25
2000
0.20
1600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
9
12
15
Transconductance
Transfer Characteristics
0.15
0.10
6
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
VGS = 4.5 V
Ciss
1200
800
VGS = 10 V
0.05
400
Coss
0.00
0
4
8
12
16
ID - Drain Current (A)
On-Resistance vs. Drain Current
S20-0765, Rev. B, 12-Oct-2020
20
Crss
0
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 76598
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ7415AENW
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 5.7 A
VDS = 30 V
8
6
4
2
VGS = 10 V
1.7
VGS = 4.5 V
1.3
0.9
0.5
- 50 - 25
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Gate Charge
100
1.0
10
0.7
TJ = 150 °C
IS - Source Current (A)
ID = 250 μA
VGS(th) Variance (V)
ID = 5.7 A
2.1
0.4
ID = 5 mA
0.1
1
0.1
TJ = 25 °C
0.01
- 0.2
0.001
0.0
- 0.5
- 50 - 25
0
25
50
75
100
125
150
0.2
175
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
Threshold Voltage
- 60
0.5
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
RDS(on) - On-Resistance (Ω)
0.4
0.3
0.2
TJ = 150 °C
0.1
2
4
6
8
10
On-Resistance vs. Gate-to-Source Voltage
S20-0765, Rev. B, 12-Oct-2020
- 68
- 72
- 76
- 80
- 50 - 25
TJ = 25 °C
0.0
0
- 64
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 76598
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ7415AENW
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID Limited
ID - Drain Current (A)
10
100 μs
1 ms
10 ms
100 ms, 1 s,10 s, DC
1
Limited by RDS(on)*
0.1
0.01
0.01
TC = 25 °C
Single Pulse
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S20-0765, Rev. B, 12-Oct-2020
Document Number: 76598
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ7415AENW
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 81 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-5
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76598.
S20-0765, Rev. B, 12-Oct-2020
Document Number: 76598
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
PowerPAK® 1212-8W Case Outline
E2
E4
H
L
K
1
Z
2
4
5
3
4
b
6
θ
3
D5
2
D2
2
7
D1
D
8
e
1
M
θ
D4
A2
W
L1
θ
E3
Backside view of single pad
θ
c
A
A1
2
E1
E
DIM.
Detail Z
Notes
1 Inch will govern
2 Dimensions exclusive of mold gate burrs
3 Dimensions exclusive of mold flash and
cutting burrs
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.97
1.04
1.12
0.038
0.041
0.044
A1
0
-
0.05
0
-
0.002
A2
0
-
0.13
0
-
0.005
b
0.23
0.30
0.41
0.009
0.012
0.016
c
0.23
0.28
0.33
0.009
0.011
0.013
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.95
3.05
3.15
0.116
0.120
0.124
D2
1.98
2.11
2.24
0.078
0.083
0.088
D4
0.47 typ.
D5
2.3 typ.
0.0185 typ.
0.090 typ.
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
2.95
3.05
3.15
0.116
0.120
0.124
E2
1.47
1.60
1.73
0.058
0.063
0.068
E3
1.75
1.85
1.98
0.069
0.073
0.078
E4
0.34 typ.
0.013 typ.
e
0.65 BSC.
0.026 BSC
K
0.86 typ.
0.034 typ.
H
0.30
0.41
0.51
0.012
0.016
0.020
L
0.30
0.43
0.56
0.012
0.017
0.022
L1
0.06
0.13
0.20
0.002
0.005
0.008
0°
-
12°
0°
-
12°
W
0.15
0.25
0.36
0.006
0.010
0.014
M
0.125 typ.
0.005 typ.
ECN: C15-1530-Rev. B, 16-Nov-15
DWG: 6032
Revision: 16-Nov-15
Document Number: 64614
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
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7
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 09-Jul-2021
1
Document Number: 91000