SQA401CEJW
www.vishay.com
Vishay Siliconix
Automotive P-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SC-70W-6L Single
S
4
D
5
• TrenchFET® power MOSFET
D
6
• AEC-Q101 qualified
• Wettable flank terminals
• 100 % Rg and UIS tested
2.
05
m
m
1
m
5m
2.0
Top View
S
7
2
D
3
G
1
D
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Bottom View
S
Marking Code: QKXXXX
PRODUCT SUMMARY
G
VDS (V)
-20
RDS(on) (Ω) at VGS = -4.5 V
0.125
RDS(on) (Ω) at VGS = -2.5 V
0.219
ID (A)
-3.75
Configuration
Single
D
P-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK SC-70W-6L
Lead (Pb)-free and halogen-free
SQA401CEJW
(for detailed order number please see www.vishay.com/doc?79776)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
SYMBOL
VDS
LIMIT
-20
Gate-source voltage
VGS
± 12
Continuous drain current a
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
-3.75
IS
-3.75
-12
IAS
-8
EAS
3.2
TJ, Tstg
Soldering recommendations (peak temperature) d, e
V
-3.75
IDM
PD
UNIT
13.6
4.5
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
LIMIT
RthJA
90
RthJF
11
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70W-6L is a leadless package and features wettable flank terminals.
The end of the lead terminal is plated with tin
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Not intended for continuous use with positive gate voltage > 3.0 V
S21-0091-Rev. A, 08-Feb-2021
Document Number: 66844
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA401CEJW
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
VDS
VGS = 0, ID = -250 μA
-20
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-0.6
-1.0
-1.3
VDS = 0 V, VGS = ± 12 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = -20 V
-
-
-1
VGS = 0 V
VDS = -20 V, TJ = 125 °C
-
-
-50
VGS = 0 V
VDS = -20 V, TJ = 175 °C
-
-
-150
VGS = -4.5 V
VDS ≥ 5 V
-8
-
-
VGS = -4.5 V
ID = -2.4 A
-
0.085
0.125
VGS = -4.5 V
ID = -2.4 A, TJ = 125 °C
-
-
0.175
VGS = -4.5 V
ID = -2.4 A, TJ = 175 °C
-
-
0.200
VGS = -2.5 V
ID = -1.8 A
-
0.160
0.219
-
6
-
-
265
330
-
75
94
-
50
63
VDS = -10 V, ID = -2.4 A
V
nA
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
Rg
VGS = 0 V
VDS = -10 V, f = 1 MHz
VGS = -4.5 V
VDS = -10 V, ID = -2.4 A
f = 1 MHz
td(on)
tr
td(off)
VDD = -10 V, RL = 5.21 Ω
ID ≅ -1.9 A, VGEN = -4.5 V, Rg = 1 Ω
tf
-
3.5
5.5
-
0.9
-
-
1.2
-
2.8
5.6
8.4
-
20
30
-
18
27
-
19
28
-
8
12
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics
Pulsed current a
ISM
Forward voltage
VSD
IF = -2 A, VGS = 0
-
-
-12
A
-
-0.8
-1.2
V
Body diode reverse recovery time
trr
-
22
44
ns
Body diode reverse recovery charge
Qrr
-
12
24
nC
Reverse recovery fall time
ta
-
9
-
Reverse recovery rise time
tb
-
13
-
IRM(REC)
-
-1
-
Body diode peak reverse recovery current
IF = -1.5 A, di/dt = 100 A/μs
ns
A
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0091-Rev. A, 08-Feb-2021
Document Number: 66844
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA401CEJW
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
20
10
10000
VGS = 5 V
VGS = 4.5 V
16
VGS = 3.5 V
VGS = 3 V
8
100
VGS = 2.5 V
4
1000
6
1st line
2nd line
1000
12
2nd line
ID - Drain Current (A)
8
VGS = 4 V
1st line
2nd line
2nd line
ID - Drain Current (A)
10000
4
2
VGS = 2 V
TC = 125 °C
0
1
2
3
4
TC = -55 °C
0
10
0
100
TC = 25 °C
5
0
1
2
3
10
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
Axis Title
0.5
TC = -55 °C
TC = 25 °C
6
TC = 125 °C
4
2
10000
0.4
1000
VGS = 2.5 V
0.3
1st line
2nd line
8
2nd line
RDS(on) - On-Resistance (Ω)
2nd line
gfs - Transconductance (S)
10
0.2
100
0.1
VGS = 4.5 V
0
0.0
0
1
2
3
4
5
10
0
2
4
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
Axis Title
Axis Title
Crss
100
10
10
8
12
16
20
10000
ID = 2.4 A
VDS = 10 V
4
1000
3
1st line
2nd line
Coss
2nd line
VGS - Gate-to-Source Voltage (V)
1000
1st line
2nd line
2nd line
C - Capacitance (pF)
Ciss
100
2
100
1
0
10
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S21-0091-Rev. A, 08-Feb-2021
10
5
10000
4
8
ID - Drain Current (A)
1000
0
6
5
Document Number: 66844
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA401CEJW
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
0.6
ID = 2.5 A
ID = 250 μA
0.4
VGS = 4.5 V
1000
1.4
VGS = 2.5 V
1.1
100
2nd line
VGS(th) - Variance (V)
1.7
10000
0.8
1000
0.2
ID = 5 mA
0
100
-0.2
0.5
-0.4
10
-50 -25
0
25
50
10
-50 -25
75 100 125 150 175
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Threshold Voltage
Axis Title
Axis Title
-23
0.8
1000
1st line
2nd line
0.6
0.4
100
TJ = 150 °C
0.2
2nd line
VDS - Drain-to-Source Voltage (V)
10000
10000
ID = 10 mA
-24
1000
-25
1st line
2nd line
1.0
2nd line
RDS(on) - On-Resistance (Ω)
1st line
2nd line
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
-26
100
-27
TJ = 25 °C
0
-28
10
0
1
2
3
4
5
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Axis Title
Axis Title
100
10000
100
10000
TJ = 25 °C
100
0.1
10
100 us
1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1 ms
10 ms
100 ms, 1 s, 10 s, DC
ID limited
100
Limited by RDS(on) a
0.1
TC = 25 °C,
single pulse
0.01
1000
1st line
2nd line
1
1000
2nd line
ID - Drain Current (A)
TJ = 150 °C
1st line
2nd line
2nd line
IS - Source Current (A)
IDM limited
10
0.01
0.01
BVDSS limited
10
0.1
1
10
VSD - Source-to-Drain Voltage (V)
VDS - Drain-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
Safe Operating Area
100
Note
a. VGS > minimum VGS at which RDS(on) is specified
S21-0091-Rev. A, 08-Feb-2021
Document Number: 66844
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA401CEJW
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
2
1
Duty cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty cycle, D =
0.02
t1
t2
2. Per unit base = R thJA = 90 °C/W
3. TJM - TA = PDMZthJA(t)
Single pulse
0.01
10-4
10-3
4. Surface mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66844.
S21-0091-Rev. A, 08-Feb-2021
Document Number: 66844
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
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Revision: 01-Jan-2023
1
Document Number: 91000
