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Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SC-70-6L Single
S
4
D
5
• TrenchFET® power MOSFET
D
6
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
05
2.
S
7
m
m
1
m
5m
2.0
Top View
3
G
Bottom View
2
D
1
D
S
Marking Code: QFXXXX
G
PRODUCT SUMMARY
VDS (V)
-30
RDS(on) () at VGS = -10 V
0.020
RDS(on) () at VGS = -4.5 V
0.033
ID (A)
Configuration
Package
P-Channel MOSFET
-10
D
Single
PowerPAK SC-70
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
SYMBOL
VDS
LIMIT
-30
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction) a
ID
-10
10
Pulsed drain current b
IDM
-40
Single pulse avalanche current
IAS
15
EAS
11.25
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
PD
V
-10
IS
Single pulse avalanche energy
UNIT
13.6
4.5
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
90
RthJF
11
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. Parametric verification ongoing
S19-0524-Rev. B, 17-Jun-2019
Document Number: 76242
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For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0, ID = -250 μA
-30
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-2
-2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = -30 V
-
-
-1
-
-
-50
-150
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = -30 V, TJ = 125 °C
VGS = 0 V
VDS = -30 V, TJ = 175 °C
-
-
On-state drain current a
ID(on)
VGS = -10 V
VDS 5 V
-8
-
-
VGS = -10 V
ID = -5 A
-
0.016
0.020
Drain-source on-state resistance a
Forward transconductance b
Dynamic
RDS(on)
gfs
VGS = -10 V
ID = -5 A, TJ = 125 °C
-
-
0.029
VGS = -10 V
ID = -5 A, TJ = 175 °C
-
-
0.035
VGS = -4.5 V
ID = -4 A
-
0.026
0.033
-
17
-
-
1505
1880
-
205
260
VDS = -10 V, ID = -7 A
V
nA
μA
A
S
b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
-
181
227
Total gate charge c
Qg
-
26
33
-
4.2
-
-
4.7
-
4.5
7.6
11.2
-
20
30
-
18
27
-
19
28
-
8
12
Gate-source
charge c
Gate-drain charge c
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
Qgs
VGS = 0 V
VDS = -10 V, f = 1 MHz
VGS = -10 V
VDS = -15 V, ID = -8 A
Qgd
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = -15 V, RL = 6
ID -2.5 A, VGEN = -10 V, Rg = 1
tf
pF
nC
ns
Source-Drain Diode Ratings and Characteristics
Pulsed current a
ISM
Forward voltage
VSD
IF = -5 A, VGS = 0
-
-
-40
A
-
-0.8
-1.2
V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-0524-Rev. B, 17-Jun-2019
Document Number: 76242
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
45
40
10000
10000
VGS = 10 V thru 5 V
32
100
9
1000
24
1st line
2nd line
VGS = 4 V
18
2nd line
ID - Drain Current (A)
1000
27
1st line
2nd line
2nd line
ID - Drain Current (A)
36
16
100
TC = 25 °C
8
TC = 125 °C
VGS = 3 V
TC = -55 °C
0
10
0
2
4
6
8
10
0
10
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
30
10
0.10
10000
1000
18
TC = 125 °C
12
100
6
2nd line
RDS(on) - On-Resistance (Ω)
TC = 25 °C
24
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = -55 °C
0.08
0.06
VGS = 4.5 V
0.04
0.02
VGS = 10 V
0
0.00
10
0
4
8
12
16
0
20
6
12
ID - Drain Current (A)
2nd line
Axis Title
10
800
100
400
Coss
Crss
0
10
12
18
24
30
10000
ID = 8 A
VDS = 15 V
8
1000
6
1st line
2nd line
1000
Ciss
1st line
2nd line
2nd line
C - Capacitance (pF)
1600
2nd line
VGS - Gate-to-Source Voltage (V)
10000
6
4
100
2
0
10
0
6
12
18
24
VDS - Drain-to-Source Voltage (V)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S19-0524-Rev. B, 17-Jun-2019
30
Axis Title
2000
0
24
On-Resistance vs. Drain Current
Transconductance
1200
18
ID - Drain Current (A)
2nd line
30
Document Number: 76242
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA403EJ
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
0.5
10000
10000
VGS = 10 V
ID = 2.5 A
0.2
VGS = 4.5 V
1.10
100
1000
-0.1
ID = -5 mA
-0.4
-1.0
10
-50 -25
0
25
50
10
-50 -25
75 100 125 150 175
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Threshold Voltage
Axis Title
Axis Title
-30
0.08
1000
1st line
2nd line
0.06
0.04
TJ = 125 °C
100
0.02
TJ = 25 °C
0.00
2nd line
VDS - Drain-to-Source Voltage (V)
10000
4
6
8
-32
-34
-36
-38
-40
10
2
ID = 1 mA
1st line
2nd line
0.10
-50 -25
10
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
2nd line
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Axis Title
Axis Title
100
10
TJ = 150 °C
1st line
2nd line
1000
1
100
TJ = 25 °C
0.1
2nd line
ID - Drain Current (A)
10000
100
10
100 μs
1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
S19-0524-Rev. B, 17-Jun-2019
1000
1 ms
10 ms
100
100 ms
1 s, 10 s, DC
Limited by RDS(on) (1)
0.1
TC = 25 °C
Single pulse
0.01
10000
IDM limited
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
100
ID = -250 μA
-0.7
0.85
0.60
2nd line
IS - Source Current (A)
1st line
2nd line
1000
1.35
2nd line
VGS(th) Variance (V)
1.60
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
1.85
0.01
0.01
(1)
0.1
BVDSS limited
1
10
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 76242
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA403EJ
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 175 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76242.
S19-0524-Rev. B, 17-Jun-2019
Document Number: 76242
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
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11
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2023
1
Document Number: 91000