SQA407CEJW
www.vishay.com
Vishay Siliconix
Automotive P-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SC-70W-6L Single
S
4
D
5
• TrenchFET® power MOSFET
D
6
• AEC-Q101 qualified
• Wettable flank terminals
• 100 % Rg and UIS tested
2.
05
m
m
1
m
5m
2.0
Top View
S
7
3
G
2
D
1
D
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Bottom View
S
Marking Code: QYXXXX
G
PRODUCT SUMMARY
VDS (V)
-20
RDS(on) () at VGS = -4.5 V
0.0250
RDS(on) () at VGS = -2.5 V
0.0420
ID (A)
Configuration
D
P-Channel MOSFET
-9
Single
ORDERING INFORMATION
Package
PowerPAK SC-70W-6L
Lead (Pb)-free and halogen-free
SQA407CEJW
(for detailed order number please see www.vishay.com/doc?79776)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
SYMBOL
VDS
LIMIT
-20
Gate-source voltage
VGS
± 12
Continuous drain current a
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
-9
-9
IDM
-36
IAS
-15
EAS
11.25
TJ, Tstg
Soldering recommendations (peak temperature) d, e
V
-9
IS
PD
UNIT
13.6
4.5
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
LIMIT
RthJA
90
RthJF
11
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70W-6L is a leadless package and features wettable flank terminals.
The end of the lead terminal is plated with tin
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Not intended for continuous use with positive gate voltage > 3.0 V
S22-0434-Rev. A, 16-May-2022
Document Number: 63084
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA407CEJW
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
VDS
VGS = 0, ID = -250 μA
-20
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-0.6
-1.0
-1.3
VDS = 0 V, VGS = ± 12 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = -20 V
-
-
-1
VGS = 0 V
VDS = -20 V, TJ = 125 °C
-
-
-50
VGS = 0 V
VDS = -20 V, TJ = 175 °C
-
-
-150
VGS = -4.5 V
VDS 5 V
-8
-
-
VGS = -4.5 V
ID = -4.5 A
-
0.0202
0.0250
VGS = -4.5 V
ID = -4.5 A, TJ = 125 °C
-
-
0.0337
VGS = -4.5 V
ID = -4.5 A, TJ = 175 °C
-
-
0.0381
VGS = -2.5 V
ID = -3 A
-
0.0338
0.0420
-
20
-
-
1500
2100
-
219
310
-
195
275
-
15.7
24
-
3.6
-
-
4.6
-
1.2
2.45
3.7
-
16
24
-
22
33
-
29
44
-
10
15
VDS = -10 V, ID = -4 A
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
Rg
VGS = 0 V
VGS = -4.5 V
VDS = -10 V, f = 1 MHz
VDS = -10 V, ID = -8 A
f = 1 MHz
td(on)
tr
td(off)
VDD = -10 V, RL = 4
ID -2.5 A, VGEN = -4.5 V, Rg = 1
tf
pF
nC
ns
Source-Drain Diode Ratings and Characteristics
Pulsed current a
ISM
Forward voltage
VSD
IF = -4.5 A, VGS = 0
-
-
-36
A
-
-0.81
-1.2
V
Body diode reverse recovery time
trr
-
13
26
ns
Body diode reverse recovery charge
Qrr
-
6
12
nC
Reverse recovery fall time
ta
-
7
-
Reverse recovery rise time
tb
-
6
-
IRM(REC)
-
-0.8
-
Body diode peak reverse recovery current
IF = -2 A, di/dt = 100 A/μs
ns
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0434-Rev. A, 16-May-2022
Document Number: 63084
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA407CEJW
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
75
50
10000
10000
VGS = 5 V thru 4.5 V
VGS = 4 V
1000
VGS = 3 V
30
100
VGS = 2.5 V
15
1000
30
1st line
2nd line
VGS = 3.5 V
45
2nd line
ID - Drain Current (A)
40
1st line
2nd line
2nd line
ID - Drain Current (A)
60
20
TC = 25 °C
100
10
VGS = 2 V
TC = 125 °C
0
0
2
4
6
8
TC = -55 °C
0
10
10
0
1
2
3
10
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
Axis Title
40
0.10
32
TC = 125 °C
24
16
8
0
0.08
1000
0.06
VGS = 2.5 V
0.04
100
VGS = 4.5 V
0.02
0
0
5
10
15
20
25
10
0
5
10
Transconductance
On-Resistance vs. Drain Current
100
Coss
Crss
100
10
12
16
20
4.0
ID = 8 A
VDS = 10 V
3.5
1000
3.0
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
1st line
2nd line
1000
10000
4.5
1000
Ciss
8
2.5
2.0
1.5
100
1.0
0.5
0
10
0
4
8
12
16
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S22-0434-Rev. A, 16-May-2022
25
Axis Title
10000
4
20
ID - Drain Current (A)
Axis Title
0
15
ID - Drain Current (A)
10000
2nd line
C - Capacitance (pF)
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
TC = 25 °C
2nd line
gfs - Transconductance (S)
10000
TC = -55 °C
20
Document Number: 63084
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA407CEJW
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
0.7
10000
10000
ID = 4 A
0.5
1000
1.2
VGS = 2.5 V
1.0
100
0.8
ID = -250 μA
1000
0.3
1st line
2nd line
VGS = 4.5 V
2nd line
VGS(th) - Variance (V)
1.4
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
1.6
ID = -5 mA
0.1
100
-0.1
0.6
-0.3
10
-50 -25
0
25
50
75 100 125 150 175
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Threshold Voltage
Axis Title
-25
1000
0.09
0.06
100
TJ = 150 °C
0.03
TJ = 25 °C
0
1
2
3
4
ID = -1 mA
-26
1000
-27
-28
100
-29
-30
10
0
10000
1st line
2nd line
0.12
2nd line
VDS - Drain-to-Source Voltage (V)
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
0.15
5
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Axis Title
Axis Title
100
10000
100
10000
IDM limited
100
TJ = 25 °C
0.1
10
100 us
1 ms
10 ms
100 ms, 1 s, 10 s, DC
1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
100
Limited by RDS(on) a
0.1
TC = 25 °C,
single pulse
0.01
1000
ID limited
1st line
2nd line
1
2nd line
ID - Drain Current (A)
1000
1st line
2nd line
2nd line
IS - Source Current (A)
TJ = 150 °C
10
0.01
0.01
BVDSS limited
10
0.1
1
10
VSD - Source-to-Drain Voltage (V)
VDS - Drain-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
Safe Operating Area
100
Note
a. VGS > minimum VGS at which RDS(on) is specified
S22-0434-Rev. A, 16-May-2022
Document Number: 63084
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA407CEJW
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90 °C/W
3. TJM - T A = PDMZthJA(t)
Single pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63084.
S22-0434-Rev. A, 16-May-2022
Document Number: 63084
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SC70W-6L SIDEWETTABLE
e1
2x
A
D
K6
4x
1
A
B
Pin 1 index
e
4x
L1
2
3
L
K
E
K5
E2
E1
K2
D1
K1
K3
D2
K4
K
2x
L
6
Top view
b1
6x
5
b
6x
4
0.1 M C A B
0.05 M C
Bottom view
2x
0.10 C
0.10 C
C
0.05 C
A1
A2
See detail Z
DIM.
MIN.
0.70
0.00
0.10
0.25
0.15
0.20
1.95
0.88
0.20
1.95
1.06
0.82
A
A1
A2
b
b1
C
D
D1
D2
E
E1
E2
e
e1
K
K1
K2
K3
K4
K5
K6
L
0.15
L1
ECN: C19-1644-Rev. A, 10-Jan-2020
DWG: 6076
0.05 C
Detail Z (2:1)
C
MILLIMETERS
NOM.
0.80
0.02
0.30
0.20
0.25
2.05
0.98
0.25
2.05
1.16
0.87
0.65 BSC
1.30 BSC
0.20 typ.
0.47 typ.
0.23 typ.
0.18 typ.
0.35 typ.
0.35 typ.
0.38 typ.
0.25
0.10
MAX.
0.90
0.05
0.35
0.23
0.30
2.15
1.08
0.30
2.15
1.26
0.92
MIN.
0.027
0.000
0.004
0.010
0.006
0.008
0.077
0.035
0.008
0.077
0.042
0.032
0.35
-
0.006
-
INCHES
NOM.
0.031
0.001
0.012
0.008
0.010
0.081
0.039
0.010
0.081
0.046
0.034
0.026 BSC
0.051 BSC
0.008 typ.
0.019 typ.
0.009 typ.
0.007 typ.
0.014 typ.
0.014 typ.
0.015 typ.
0.010
0.004
MAX.
0.035
0.002
0.014
0.009
0.012
0.085
0.043
0.012
0.085
0.050
0.036
0.014
-
Notes
• Package outline exclusive of mold flash and metal burr
• Package outline inclusive of plating
Document Number: 77413
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 10-Jan-2020
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2023
1
Document Number: 91000