SQA410CEJW-T1_GE3

SQA410CEJW www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SC-70W-6L Single S 4 D 5 • TrenchFET® power MOSFET D 6 • AEC-Q101 qualified • Wettable flank terminals • 100 % Rg and UIS tested 2. 05 m m 1 m 5m 2.0 Top View S 7 3 G 2 D 1 D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View Marking Code: Q7XXXX PRODUCT SUMMARY VDS (V) G 20 RDS(on) (Ω) at VGS = 4.5 V 0.0280 RDS(on) (Ω) at VGS = 2.5 V 0.0340 RDS(on) (Ω) at VGS = 1.8 V 0.0380 S 7.8 N-Channel MOSFET ID (A) Configuration Single ORDERING INFORMATION Package PowerPAK SC-70W-6L Lead (Pb)-free and halogen-free SQA410CEJW (for detailed order number please see www.vishay.com/doc?79776) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 20 Gate-source voltage VGS ±8 Continuous drain current a TC = 25 °C TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 7.8 7.8 IDM 30 IAS 10 PD TJ, Tstg Soldering recommendations (peak temperature) d, e V 7.8 IS EAS UNIT 5 13.6 4.5 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 90 RthJC 11 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70W-6L is a leadless package and features wettable flank terminals. The end of the lead terminal is plated with tin. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S21-0820-Rev. A, 02-Aug-2021 Document Number: 63112 1 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQA410CEJW www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS = 0 V, ID = 250 μA 20 - - VGS(th) VDS = VGS, ID = 250 μA 0.4 0.6 1.1 VDS = 0 V, VGS = ± 8 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 20 V - - 1 VGS = 0 V VDS = 20 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 20 V, TJ = 175 °C - - 300 VGS = 4.5 V VDS ≥ 5 V 10 - - VGS = 4.5 V ID = 5 A - 0.0210 0.0280 VGS = 4.5 V ID = 5 A, TJ = 125 °C - - 0.0400 VGS = 4.5 V ID = 5 A, TJ = 175 °C - - 0.0454 VGS = 2.5 V ID = 4 A - 0.0240 0.0340 VGS = 1.8 V ID = 3 A VDS = 10 V, ID = 5 A - 0.0280 0.0380 - 29 - - 402 525 - 96 125 V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss - 44 58 Total gate charge c Qg - 5.1 8 Gate-source charge c Qgs - 0.67 - Gate-drain charge c Qgd - 0.95 - 4.1 8.2 12.5 - 7 12 - 13 20 - 35 55 - 10 15 Gate resistance Turn-on delay time c Rise timec Turn-off delay time c Fall time c Rg VGS = 0 V VGS = 4.5 V VDS = 10 V, f = 1 MHz VDS = 10 V, ID = 5.1 A f = 1 MHz td(on) tr td(off) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 1 Ω tf pF nC Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr IF = 4.5 A, VGS = 0 V - - 30 - 0.79 1.2 V - 7.2 14.4 ns - 1.8 3.6 nC - 3.6 - Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - 3.6 - IRM(REC) - -0.45 - Body diode peak reverse recovery current IF = 1 A, di/dt = 100 A/μs A ns A Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0820-Rev. A, 02-Aug-2021 Document Number: 63112 2 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQA410CEJW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 40 25 10000 10000 VGS = 5 V thru 2.5 V VGS = 2.0 V VGS = 1.5 V 16 100 8 1000 15 TC = 25 °C 10 100 TC = 125 °C 5 VGS = 1 V TC = -55 °C 0 0 10 0 2 4 6 1st line 2nd line 1000 24 2nd line ID - Drain Current (A) 20 1st line 2nd line 2nd line ID - Drain Current (A) 32 8 10 10 0.0 0.6 1.2 1.8 2.4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 Axis Title 50 0.10 TC = 25 °C 30 20 TC = 125 °C 10 0 0.08 1000 0.06 VGS = 1.8 V VGS = 2.5 V 0.04 100 0.02 VGS = 4.5 V 0 0 2 4 6 8 10 10 0 6 12 Transconductance On-Resistance vs. Drain Current Axis Title Coss Crss 100 10 10 8 12 16 20 10000 ID = 5.1 A VDS = 10 V 4 1000 3 1st line 2nd line 1st line 2nd line 1000 2nd line VGS - Gate-to-Source Voltage (V) Ciss 100 2 100 1 0 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S21-0820-Rev. A, 02-Aug-2021 30 5 10000 4 24 ID - Drain Current (A) Axis Title 0 18 ID - Drain Current (A) 1000 2nd line C - Capacitance (pF) 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 2nd line gfs - Transconductance (S) TC = -55 °C 40 10000 5 6 Document Number: 63112 3 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQA410CEJW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 0.4 10000 VGS = 2.5 V 1000 VGS = 1.8 V 1.1 100 2nd line VGS(th) - Variance (V) 0.2 VGS = 4.5 V 1.4 10000 0.8 1000 0 ID = 5 mA -0.2 100 ID = 250 μA -0.4 0.5 -0.6 10 -50 -25 0 25 50 10 -50 -25 75 100 125 150 175 0 25 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Threshold Voltage Axis Title Axis Title 25 0.16 1000 1st line 2nd line 0.12 0.08 100 TJ = 150 °C 2nd line VDS - Drain-to-Source Voltage (V) 10000 10000 ID = 1 mA 24 1000 23 1st line 2nd line 0.20 2nd line RDS(on) - On-Resistance (Ω) 50 TJ - Junction Temperature (°C) 0.04 1st line 2nd line ID = 5 A 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 22 100 21 TJ = 25 °C 0 20 10 0 1 2 3 4 5 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 100 10000 100 10000 TJ = 150 °C 1 100 TJ = 25 °C 0.1 10 100 us ID limited 1 1000 1st line 2nd line 1000 2nd line ID - Drain Current (A) 10 1st line 2nd line 2nd line IS - Source Current (A) IDM limited 1 ms 10 ms 100 ms, 1 s, 10 s, DC Limited by RDS(on) a 100 0.1 BVDSS limited TC = 25 °C, single pulse 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.01 10 0.1 1 10 VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V) Source Drain Diode Forward Voltage Safe Operating Area 100 Note a. VGS > minimum VGS at which RDS(on) is specified S21-0820-Rev. A, 02-Aug-2021 Document Number: 63112 4 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQA410CEJW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - T A = PDMZthJA(t) Single pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63112. S21-0820-Rev. A, 02-Aug-2021 Document Number: 63112 5 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SC70W-6L SIDEWETTABLE e1 2x A D K6 4x 1 A B Pin 1 index e 4x L1 2 3 L K E K5 E2 E1 K2 D1 K1 K3 D2 K4 K 2x L 6 Top view b1 6x 5 b 6x 4 0.1 M C A B 0.05 M C Bottom view 2x 0.10 C 0.10 C C 0.05 C A1 A2 See detail Z DIM. MIN. 0.70 0.00 0.10 0.25 0.15 0.20 1.95 0.88 0.20 1.95 1.06 0.82 A A1 A2 b b1 C D D1 D2 E E1 E2 e e1 K K1 K2 K3 K4 K5 K6 L 0.15 L1 ECN: C19-1644-Rev. A, 10-Jan-2020 DWG: 6076 0.05 C Detail Z (2:1) C MILLIMETERS NOM. 0.80 0.02 0.30 0.20 0.25 2.05 0.98 0.25 2.05 1.16 0.87 0.65 BSC 1.30 BSC 0.20 typ. 0.47 typ. 0.23 typ. 0.18 typ. 0.35 typ. 0.35 typ. 0.38 typ. 0.25 0.10 MAX. 0.90 0.05 0.35 0.23 0.30 2.15 1.08 0.30 2.15 1.26 0.92 MIN. 0.027 0.000 0.004 0.010 0.006 0.008 0.077 0.035 0.008 0.077 0.042 0.032 0.35 - 0.006 - INCHES NOM. 0.031 0.001 0.012 0.008 0.010 0.081 0.039 0.010 0.081 0.046 0.034 0.026 BSC 0.051 BSC 0.008 typ. 0.019 typ. 0.009 typ. 0.007 typ. 0.014 typ. 0.014 typ. 0.015 typ. 0.010 0.004 MAX. 0.035 0.002 0.014 0.009 0.012 0.085 0.043 0.012 0.085 0.050 0.036 0.014 - Notes • Package outline exclusive of mold flash and metal burr • Package outline inclusive of plating Document Number: 77413 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 10-Jan-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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