SQA442EJ-T1_GE3

SQA442EJ www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SC-70-6L Single S 4 D 5 • TrenchFET® power MOSFET D 6 • AEC-Q101 qualified d • 100 % Rg and UIS tested • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 05 2. S 7 m m 1 m 5m 2.0 Top View 3 G Bottom View 2 D 1 D D Marking Code: QDXXXX PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.032 RDS(on) () at VGS = 4.5 V 0.048 ID (A) 9 Configuration Package G 60 S N-Channel MOSFET Single PowerPAK SC-70 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 60 Gate-source voltage VGS ± 20 Continuous drain current a TC = 25 °C TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 9 IS 9 24.5 IAS 13 EAS 8.4 TJ, Tstg Soldering recommendations (peak temperature) e, f V 8.3 IDM PD UNIT 13.6 4.5 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 90 RthJC 11 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) d. Parametric verification ongoing e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S18-0149-Rev. A, 05-Feb-18 Document Number: 75579 1 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQA442EJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS = 0 V, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2 2.5 VDS = 0 V, VGS = ± 8 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 60 V - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250 VGS = 4.5 V VDS  5 V 10 - - VGS = 10 V ID = 3 A - 0.026 0.032 VGS = 10 V ID = 3 A, TJ = 125 °C - - 0.058 VGS = 10 V ID = 3 A, TJ = 175 °C - - 0.065 VGS = 4.5 V ID = 3 A - 0.045 0.048 - 21 - VDS = 15 V, ID = 6 A V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise timec Turn-off delay time c Fall time c Rg VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 30 V, ID = 5 A f = 1 MHz td(on) tr td(off) VDD = 30 V, RL = 6  ID  5 A, VGEN = 4.5 V, Rg = 1 k tf Source-Drain Diode Ratings and Characteristics - 509 636 - 242 302 - 14.6 18.3 - 7.75 9.7 - 1.53 - - 1.2 - 0.24 0.41 0.65 - 7.3 9.1 - 2 2.5 - 12 15.5 - 1.4 1.8 pF nC  ns b Pulsed current a ISM Forward voltage VSD IF = 4.5 A, VGS = 0 V - - 24 A - 0.75 1.2 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0149-Rev. A, 05-Feb-18 Document Number: 75579 2 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQA442EJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 50 30 10000 10000 TC = 25 °C VGS = 10 V thru 5 V 30 VGS = 4 V 20 100 10 VGS = 3 V 0 24 TC = -55 °C 12 1 2 3 4 6 0 5 10 0 2 4 6 VDS - Drain-to-Source Voltage (V) 2nd line ID - Drain Current (A) 2nd line Output Characteristics Transconductance 8 10 Axis Title Axis Title 10000 7.0 10000 50 40 1000 1st line 2nd line 4.2 TC = 25 °C 2.8 100 1000 30 1st line 2nd line 2nd line ID - Drain Current (A) 5.6 2nd line ID - Drain Current (A) 100 TC = 125 °C 10 0 1000 18 1st line 2nd line 2nd line gfs - Transconductance (S) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 40 TC = 25 °C 20 100 10 1.4 TC = -55 °C TC = 125 °C TC = -55 °C 0 0 1 2 3 4 TC = 125 °C 0 10 5 10 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Transfer Characteristics Transfer Characteristics 10 Axis Title 750 10000 Ciss 1000 450 1st line 2nd line 2nd line C - Capacitance (pF) 600 300 100 Coss 150 Crss 0 10 0 12 24 36 48 60 VDS - Drain-to-Source Voltage (V) 2nd line Capacitance S18-0149-Rev. A, 05-Feb-18 Document Number: 75579 3 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQA442EJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 0.096 0.072 0.048 VGS =4.5 V 0.024 VGS = 10 V 8 1000 6 4 100 2 0.000 0 8 16 24 32 10000 ID = 5 A VDS = 30 V 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.120 0 40 10 0 2 ID - Drain Current (A) 2nd line 4 6 8 10 Qg - Total Gate Charge (nC) 2nd line On-Resistance vs. Drain Current Gate Charge 0.5 3.0 ID = 250 μA 2.5 2nd line VGS(th) Variance (V) 2nd line VGS(th) Variance (V) 0.2 -0.1 ID = 5 mA -0.4 -0.7 ID = 250 μA ID = 5 mA 2.0 1.5 ID = 20 μA 1.0 ID = 10 μA 0.5 ID = 1 μA 0 -1.0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) 2nd line TJ - Temperature (°C) 2nd line Threshold Voltage Threshold Voltage Axis Title 10000 ID = 2.5 A 2.0 VGS = 10 V 1000 1.5 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.5 VGS = 4.5 V 1.0 100 0.5 0 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line On-Resistance vs. Junction Temperature S18-0149-Rev. A, 05-Feb-18 Document Number: 75579 4 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQA442EJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 80 1000 0.120 0.080 100 TJ = 125°C 0.040 TJ = 25 °C 0.000 2 4 6 8 74 71 68 65 10 0 ID = 1 mA 77 1st line 2nd line 0.160 2nd line VDS - Drain-to-Source Voltage (V) 10000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.200 10 -50 -25 10 VGS - Gate-to-Source Voltage (V) 2nd line 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature Axis Title 100 10000 100 10 TJ = 150 °C 1000 TJ = 25 °C 1 100 0.1 ID - Drain Current (A) 10 1st line 2nd line 2nd line IS - Source Current (A) IDM Limited Limited by RDS(on)* 100 μs 1 ID Limited 0.1 0.01 10 0 0.3 0.6 1.0 1.3 1.6 VSD - Source-to-Drain Voltage (V) 2nd line Source Drain Diode Forward Voltage S18-0149-Rev. A, 05-Feb-18 1 ms 10 ms 100 ms, 1 s, 10 s, DC TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 75579 5 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQA442EJ www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.            Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75579. S18-0149-Rev. A, 05-Feb-18 Document Number: 75579 6 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000