SQD07N25-350H
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Vishay Siliconix
Automotive N-Channel 250 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
250
RDS(on) (Ω) at VGS = 10 V
• Package with low thermal resistance
0.350
ID (A)
• AEC-Q101 qualified d
7
Configuration
Single
Package
• 100 % Rg and UIS tested
TO-252
D
TO-252
TO
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Drain connected to tab
G
S
S
D
N-Channel MOSFET
G
Top View
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
250
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
7
4
IS
50
IDM
15
IAS
7
EAS
2.4
PD
UNIT
71
23
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
50
RthJC
2.1
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
S15-1874-Rev. C, 10-Aug-15
Document Number: 67088
1
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SQD07N25-350H
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 V, ID = 250 μA
250
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3.0
3.5
VDS = 0 V, VGS = ± 30 V
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 250 V
-
-
1
VGS = 0 V
VDS = 250 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 250 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS ≥ 5 V
10
-
-
VGS = 10 V
ID = 10 A
-
0.290
0.350
VGS = 10 V
ID = 10 A, TJ = 125 °C
-
-
0.858
VGS = 10 V
ID = 10 A, TJ = 175 °C
-
-
1.250
-
20
-
-
964
1205
-
88
110
VDS = 15 V, ID = 10 A
V
nA
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
32
40
Total Gate Charge c
Qg
-
19
29
Gate-Source Charge c
Qgs
-
6.5
-
Gate-Drain
Charge c
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 125 V, ID = 10 A
Qgd
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = 125 V, RL = 12.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
-
5
-
0.35
1
3
-
9
14
-
8
12
-
15
23
-
4
6
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = 20 A, VGS = 0 V
-
-
15
A
-
0.9
1.5
V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1874-Rev. C, 10-Aug-15
Document Number: 67088
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD07N25-350H
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
20
15
VGS = 10 V thru 6 V
12
ID - Drain Current (A)
ID - Drain Current (A)
16
VGS = 5 V
12
8
4
9
TC = 25 °C
6
3
TC = 125 °C
VGS = 4 V
0
0
3
6
9
12
15
0
2
Output Characteristics
1.2
28
gfs - Transconductance (S)
35
0.9
TC = 25 °C
0.3
TC = 125 °C
8
10
TC = - 55 °C
TC = 25 °C
21
14
TC = 125 °C
7
TC = - 55 °C
0
0.0
0
2
4
6
8
0
10
3
6
9
12
15
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
1.0
1500
0.8
1200
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
6
Transfer Characteristics
1.5
0.6
4
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
TC = - 55 °C
0
0.6
VGS = 10 V
0.4
0.2
Ciss
900
600
Crss
300
Coss
0.0
0
4
8
12
16
ID - Drain Current (A)
On-Resistance vs. Drain Current
S15-1874-Rev. C, 10-Aug-15
20
0
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 67088
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For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD07N25-350H
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
3.6
ID = 10 A
8
ID = 17 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
VDS = 125 V
6
4
2
3.0
2.4
1.8
1.2
0.6
0.0
-50
0
4
8
12
16
20
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.7
10
0.2
TJ = 150 °C
VGS(th) Variance (V)
IS - Source Current (A)
0
VGS = 10 V
1
TJ = 25 °C
0.1
175
-0.3
ID = 5 mA
-0.8
ID = 250 μA
-1.3
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
-1.8
-50
1.2
-25
0
25
50
75
100
VSD - Source-to-Drain Voltage (V)
TJ - Temperature (°C)
Source Drain Diode Forward Voltage
Threshold Voltage
125
150
175
VDS - Drain-to-Source Voltage (V)
320
306
ID = 10 mA
292
278
264
250
-50
-25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S15-1874-Rev. C, 10-Aug-15
Document Number: 67088
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD07N25-350H
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
100 μs
Limited by RDS(on)*
1 ms
10 ms
100 ms, 1 s, 10 s, DC
1
0.1
0.01
0.001
0.01
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-1874-Rev. C, 10-Aug-15
Document Number: 67088
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD07N25-350H
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67088.
S15-1874-Rev. C, 10-Aug-15
Document Number: 67088
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD07N25-350H
www.vishay.com
REVISION HISTORY
REVISION
C
a
DATE
04-Aug-15
Vishay Siliconix
DESCRIPTION OF CHANGE
• Revised Rg minimum limit
Note
a. As of April 2014
S15-1874-Rev. C, 10-Aug-15
Document Number: 67088
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Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
Note
• Dimension L3 is for reference only.
Revision: 02-Sep-13
Document Number: 64424
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 09-Jul-2021
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Document Number: 91000
