SQD100N03-3m4
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Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
30
RDS(on) () at VGS = 10 V
• 100 % Rg and UIS Tested
0.0034
ID (A)
• AEC-Q101 Qualifiedd
100
Configuration
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Single
TO-252
D
G
Drain Connected to Tab
G
D
S
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-252
Lead (Pb)-free and Halogen-free
SQD100N03-3m4-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Currenta
Continuous Source Current (Diode
TC = 125 °C
Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
100
87
IS
100
IDM
160
IAS
58
EAS
168
PD
UNIT
136
45
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
50
RthJC
1.1
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S12-2906-Rev. A, 10-Dec-12
Document Number: 62549
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SQD100N03-3m4
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductanceb
VDS
VGS = 0 V, ID = 250 μA
30
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3.0
3.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 30 V
-
-
1
VGS = 0 V
VDS = 30 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 30 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS5 V
50
-
-
VGS = 10 V
ID = 20 A
-
0.0028
0.0034
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.0051
VGS = 10 V
ID = 20 A, TJ = 175 °C
VDS = 20 V, ID = 20 A
-
-
0.0060
-
108
-
-
5879
7349
-
942
1178
V
nA
μA
A
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
413
516
Total Gate Chargec
Qg
-
82.7
124
Gate-Source Chargec
Qgs
-
23.8
-
Gate-Drain
Chargec
Gate Resistance
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VGS = 10 V
VDS = 15 V, f = 1 MHz
VDS = 15 V, ID = 50 A
Qgd
Rg
td(off)
nC
-
14.1
-
f = 1 MHz
0.9
1.86
2.8
-
13
20
VDD = 15 V, RL = 0.3
ID 50 A, VGEN = 10 V, Rg = 1
-
10
15
-
37
56
-
10
15
-
-
160
A
-
0.84
1.2
V
td(on)
tr
pF
tf
ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 30 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2906-Rev. A, 10-Dec-12
Document Number: 62549
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD100N03-3m4
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
120
150
VGS = 10 V thru 6 V
96
ID - Drain Current (A)
ID - Drain Current (A)
120
90
VGS = 5 V
60
72
TC = 25 °C
48
24
30
TC = 125 °C
TC = - 55 °C
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
Output Characteristics
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
Transfer Characteristics
250
0.010
0.008
TC = 25 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
TC = - 55 °C
200
150
TC = 125 °C
100
50
0.006
0.004
VGS = 10 V
0.002
0
0.000
0
14
28
42
ID - Drain Current (A)
56
70
0
Transconductance
40
60
ID - Drain Current (A)
80
100
On-Resistance vs. Drain Current
10
VGS - Gate-to-Source Voltage (V)
9000
7200
C - Capacitance (pF)
20
Ciss
5400
3600
1800
Coss
Crss
0
0
ID = 50 A
VDS = 15 V
8
6
4
2
0
6
12
18
24
VDS - Drain-to-Source Voltage (V)
Capacitance
S12-2906-Rev. A, 10-Dec-12
30
0
20
40
60
80
Qg - Total Gate Charge (nC)
100
Gate Charge
Document Number: 62549
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD100N03-3m4
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
VGS = 10 V
ID = 20 A
1.6
10
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
1.8
1.4
1.2
1.0
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.8
0.001
0.6
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
0.0
175
0.025
0.7
0.020
0.2
0.015
0.010
TJ = 150 °C
0.005
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
On-Resistance vs. Junction Temperature
0.2
- 0.3
ID = 5 mA
- 0.8
ID = 250 μA
- 1.3
TJ = 25 °C
0.000
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
- 1.8
- 50 - 25
0
25
50
75 100
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
125
150
175
Threshold Voltage
VDS - Drain-to-Source Voltage (V)
40
38
ID = 1 mA
36
34
32
30
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S12-2906-Rev. A, 10-Dec-12
Document Number: 62549
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD100N03-3m4
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
100 μs
10
1 ms
ID Limited
10 ms, 100 ms
1 s,10 s, DC
1
0.1
0.01
0.01
Limited by RDS(on)*
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-2906-Rev. A, 10-Dec-12
Document Number: 62549
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD100N03-3m4
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62549.
S12-2906-Rev. A, 10-Dec-12
Document Number: 62549
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
Note
• Dimension L3 is for reference only.
Revision: 02-Sep-13
Document Number: 64424
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Revision: 09-Jul-2021
1
Document Number: 91000