SQD15N06-42L_T4GE3

SQD15N06-42L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY FEATURES d VDS (V) • TrenchFET® power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.042 • 100 % Rg and UIS tested RDS(on) (Ω) at VGS = 4.5 V 0.060 • AEC-Q101 qualified ID (A) • Package with low thermal resistance 15 Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Single Package TO-252 D TO-252 TO Drain connected to tab G S S D N-Channel MOSFET G Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 15 10 IS 15 IDM 50 IAS 18 EAS 16.2 PD UNIT 37 11 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 50 RthJC 4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mount c Junction-to-Case (Drain) °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD15N06-42L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = 60 V - - 1 - - 50 150 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V, TJ = 125 °C VGS = 0 V VDS = 60 V, TJ = 175 °C - - On-State Drain Current a ID(on) VGS = 10 V VDS ≥ 5 V 30 - - VGS = 10 V ID = 10 A - 0.036 0.042 Drain-Source On-State Resistance a Forward Transconductance b RDS(on) gfs VGS = 10 V ID = 10 A, TJ = 125 °C - - 0.075 VGS = 10 V ID = 10 A, TJ = 175 °C - - 0.090 VGS = 4.5 V ID = 10 A, TJ = 125 °C - 0.092 - VGS = 4.5 V ID = 10 A, TJ = 175 °C - 0.110 - VGS = 4.5 V ID = 10 A - 0.048 0.060 - 11 - - 425 535 - 95 120 - 40 50 VDS = 15 V, ID = 6 A V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Rg VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 30 V, ID = 15 A f = 1 MHz td(on) tr td(off) VDD = 30 V, RL = 2 Ω ID ≅ 15 A, VGEN = 10 V, Rg = 1 Ω tf - 9.5 15 - 1.7 - - 2.5 - 1.2 2.5 5.4 - 5 8 - 10 15 - 13 20 - 8 12 pF nC Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM - - 50 A Forward Voltage VSD IF = 10 A, VGS = 0 V - 0.9 1.2 V trr IF = 15 A, dI/dt = 100 A/μs - 29 60 ns Reverse Recovery Time Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD15N06-42L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 50 VGS = 10 V thru 6 V 32 ID - Drain Current (A) ID - Drain Current (A) 40 VGS = 5 V 30 20 VGS = 4 V 24 TC = 25 °C 16 10 TC = 125 °C 8 VGS = 3 V 0 TC = - 55 °C 0 0 2 4 6 8 10 0 4 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 0.10 RDS(on) - On-Resistance () TC = -55 °C 20 TC = 25 °C 15 TC = 125 °C 10 5 0.08 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 0 0 0 2 4 6 8 10 0 4 8 12 16 20 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 700 10 VGS - Gate-to-Source Voltage (V) 600 C - Capacitance (pF) 6 VDS - Drain-to-Source Voltage (V) 25 gfs - Transconductance (F) 2 500 Ciss 400 300 200 Coss ID = 15 A VDS = 30 V 8 6 4 2 100 Crss 0 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance S15-1873-Rev. G, 10-Aug-15 50 60 0 2 4 6 8 10 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68880 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD15N06-42L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 10 A 2.1 10 1.7 VGS = 10 V VGS = 4.5 V 1.3 0.9 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.5 -50 -25 0 25 50 75 100 125 0.001 150 175 0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 0.5 0.5 0.4 0.2 0.3 -0.1 VGS(th) (V) RDS(on) - On-Resistance (Ω) IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.5 0.2 1.2 ID = 5 mA -0.4 ID = 250 µA TJ = 150 °C 0.1 -0.7 TJ = 25 °C -1.0 -50 0 0 2 4 6 8 10 -25 0 VGS - Gate-to-Source Voltage (V) 25 50 75 100 125 150 175 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage VDS - Drain-to-Source Voltage (V) 75 ID = 10 mA 72 69 66 63 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD15N06-42L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited I D - Drain Current (A) 100 Limited by RDS(on)* 10 100 µs ID Limited 1 ms 10 ms 100 ms 1 s,10 s, DC 1 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD15N06-42L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68880. S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD15N06-42L www.vishay.com REVISION HISTORY REVISION G a DATE 04-Aug-15 Vishay Siliconix DESCRIPTION OF CHANGE • Revised Rg minimum limit Note a. As of April 2014 S15-1873-Rev. G, 10-Aug-15 Document Number: 68880 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T13-0592-Rev. A, 02-Sep-13 DWG: 6019 Note • Dimension L3 is for reference only. Revision: 02-Sep-13 Document Number: 64424 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000