SQD35N05-26L-GE3

SQD35N05-26L www.vishay.com Vishay Siliconix Automotive N-Channel 55 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 55 RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A) • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested 30 Configuration • AEC-Q101 Qualifiedd Single • Compliant to RoHS Directive 2002/95/EC D TO-252 G Drain Connected to Tab G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD35N05-26L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 55 Gate-Source Voltage VGS ± 20 TC = 25 °Ca Continuous Drain Current Continuous Source Current (Diode ID TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Energy Single Pulse Avalanche Current Maximum Power Dissipationb L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range V 30 19 IS 30 IDM 120 IAS 20 EAS 20 PD TC = 125 °C UNIT 50 16 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 60 RthJC 3 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Case (Drain) °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S11-2046-Rev. D, 24-Oct-11 1 Document Number: 68839 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD35N05-26L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static VDS VGS = 0 V, ID = 250 μA 55 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 Zero Gate Voltage Drain Current IDSS Drain-Source Breakdown Voltage Gate-Source Threshold Voltage On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb ID(on) RDS(on) VGS = 0 V VDS = 55 V - - 1 VGS = 0 V VDS = 55 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 55 V, TJ = 175 °C - - 250 VGS = 5 V VDS5 V 30 - - VGS = 10 V ID = 20 A - 0.016 0.020 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.035 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.043 VGS = 4.5 V ID = 15 A - 0.021 0.026 - 34 - gfs VDS = 15 V, ID = 20 A V nA μA A  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Chargec Gate-Source Gate-Drain Chargec Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec - 938 1175 - 203 255 Crss - 86 110 Qg - 12 18 - 4.1 - Qgs VGS = 0 V VGS = 5 V VDS = 25 V, f = 1 MHz VDS = 25 V, ID = 35 A Qgd - 4.8 - 1.3 2.6 4 - 7 11 VDD = 25 V, RL = 0.71  ID  35 A, VGEN = 10 V, Rg = 1  - 10 15 - 18 27 - 5 8 - - 120 A - 1.2 1.5 V td(on) td(off) nC f = 1 MHz Rg tr pF tf  ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 80 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2046-Rev. D, 24-Oct-11 2 Document Number: 68839 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD35N05-26L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 32 32 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 V thru 4 V 24 16 VGS = 3 V 8 24 16 TC = 25 °C 8 TC = 125 °C TC = - 55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 50 5 0.10 0.08 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 40 TC = 25 °C 30 20 TC = 125 °C 10 0.06 0.04 VGS = 4.5 V 0.02 VGS = 10 V 0.00 0 0 5 10 15 20 0 25 8 16 24 32 40 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 100 2.5 ID = 20 A 10 I S - Source Current (A) VGS = 10 V (Normalized) R DS(on) - On-Resistance 2.1 1.7 1.3 0.9 0.5 - 50 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 - 25 0 25 50 75 100 125 150 0.001 0.0 175 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage S11-2046-Rev. D, 24-Oct-11 3 1.2 Document Number: 68839 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD35N05-26L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 6 1500 ID = 35 A 5 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 1200 Ciss 900 600 Coss 300 Crss VDS = 25 V 4 3 2 1 0 0 0 5 10 15 20 25 30 35 40 45 50 55 0 3 6 9 12 Qg - Total Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Capacitance Gate Charge 0.6 0.20 0.3 0.16 VGS(th) Variance (V) R DS(on) - On-Resistance (Ω) 15 0.12 0.08 0 2 4 6 8 ID = 5 mA - 0.6 - 0.9 TJ = 25 °C 0.00 - 0.3 ID = 250 µA TJ = 150 °C 0.04 0 - 1.2 - 50 10 - 25 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 125 150 175 70 VDS - Drain-to-Source Voltage (V) ID = 1 mA 67 64 61 58 55 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S11-2046-Rev. D, 24-Oct-11 4 Document Number: 68839 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD35N05-26L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited 100 ID - Drain Current (A) ID Limited 100 μs 10 1 ms 10 ms 100 ms 10 s, 1 s, DC 1 Limited by RDS(on)* 0.1 0.01 0.01 BVDSS Limited TC = 25 °C Single Pulse 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S11-2046-Rev. D, 24-Oct-11 5 Document Number: 68839 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD35N05-26L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68839. S11-2046-Rev. D, 24-Oct-11 6 Document Number: 68839 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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