SQD40020E_GE3

SQD40020E www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES TO-252 TO • TrenchFET® power MOSFET • Package with low thermal resistance Drain connected to tab • 100 % Rg and UIS tested • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S D D G Top View PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.00233 ID (A) Configuration Package G 40 100 N-Channel MOSFET Single S TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID V 100 87.5 IS 97 IDM 280 IAS 46 EAS 105.8 PD UNIT 107 35 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 50 RthJC 1.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) S19-0002-Rev. A, 07-Jan-2019 Document Number: 76909 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40020E www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = 40 V - - 1 - - 50 V nA μA Zero gate voltage drain current IDSS VGS = 0 V VDS = 40 V, TJ = 125 °C VGS = 0 V VDS = 40 V, TJ = 175 °C - - 500 μA On-state drain current a ID(on) VGS = 10 V VDS  5 V 50 - - A VGS = 10 V ID = 20 A - VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.00390 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.00470 - 84 - - 5405 8000 - 1942 2700 - 175 250 Drain-source on-state resistance a Forward transconductance b RDS(on) gfs VDS = 15 V, ID = 20 A 0.00190 0.00233  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 50 A f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 0.4  ID  50 A, VGEN = 10 V, Rg = 1  tf - 84 130 - 29.5 - - 19.5 - pF nC  1 2 3 - 17 30 - 17 30 - 34 60 - 18 35 - - 280 - 0.8 1.5 V - 41 85 ns - 28 60 nC ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr IF = 25 A, VGS = 0 V IF = 50 A, di/dt = 100 A/μs Reverse recovery fall time ta - 24 - Reverse recovery rise time tb - 17 - IRM(REC) - -1.36 - Body diode peak reverse recovery current A ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0002-Rev. A, 07-Jan-2019 Document Number: 76909 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40020E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 300 160 1000 1st line 2nd line 180 VGS = 5 V 100 2nd line ID - Drain Current (A) VGS = 10 V thru 6 V 120 10000 60 1000 120 1st line 2nd line 240 2nd line ID - Drain Current (A) 200 10000 80 TC = 25 °C 100 TC = 125 °C 40 TC = -55 °C 0 0 10 2 4 6 8 10 10 0 VDS - Drain-to-Source Voltage (V) 2 4 Axis Title Axis Title 0.005 1000 120 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C TC = 25 °C TC = 125 °C 80 100 40 0 2nd line RDS(on) - On-Resistance (Ω) 10000 40 60 80 10000 0.004 1000 0.003 VGS = 10 V 0.002 100 0.001 0.000 10 20 100 10 0 20 40 Transconductance On-Resistance vs. Drain Current Axis Title Axis Title Crss 100 100 10 10 24 32 40 10000 ID = 50 A VDS = 20 V 8 1000 6 1st line 2nd line 1000 2nd line VGS - Gate-to-Source Voltage (V) Coss 1st line 2nd line 2nd line C - Capacitance (pF) Ciss 16 4 100 2 0 10 0 25 50 75 100 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S19-0002-Rev. A, 07-Jan-2019 100 10 10000 8 80 ID - Drain Current (A) 10 000 0 60 ID - Drain Current (A) 1000 10 Transfer Characteristics 200 0 8 VGS - Gate-to-Source Voltage (V) Output Characteristics 160 6 1st line 2nd line 0 125 Document Number: 76909 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40020E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 100 10000 ID = 20 A 1.6 1.2 100 0.8 0.4 10 TJ = 150 °C 1000 TJ = 25 °C 1 100 0.1 0.01 -50 -25 0 25 50 75 100 125 150 175 10 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.015 0.7 10000 10000 0.2 0.006 TJ = 150 °C 100 0.003 1000 -0.3 1st line 2nd line 1000 0.009 2nd line VGS(th) - Variance (V) 0.012 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line 1000 2nd line IS - Source Current (A) VGS = 10 V 2.0 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.4 ID = 5 mA -0.8 100 -1.3 ID = 250 μA TJ = 25 °C 0.000 -1.8 10 0 2 4 6 8 10 -50 -25 10 0 25 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title Axis Title 56 1000 10000 10000 ID = 1 mA 52 50 100 48 2nd line ID - Drain Current (A) 1000 IDM limited 10 -50 -25 0 25 50 75 100 125 150 175 1 ms ID limited 10 1000 10 ms 1 100 ms, 1 s, 10 s, DC Limited by RDS(on) a 100 BVDSS limited 0.1 46 100 μs 1st line 2nd line 100 54 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 50 0.01 0.01 TC = 25 °C, single pulse 10 0.1 1 10 TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) Drain Source Breakdown vs. Junction Temperature Safe Operating Area 100 Note a. VGS > minimum VGS at which RDS(on) is specified S19-0002-Rev. A, 07-Jan-2019 Document Number: 76909 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40020E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1 Duty Cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 0.05 100 0.02 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 Duty Cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 0.05 100 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76909. S19-0002-Rev. A, 07-Jan-2019 Document Number: 76909 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T13-0592-Rev. A, 02-Sep-13 DWG: 6019 Note • Dimension L3 is for reference only. Revision: 02-Sep-13 Document Number: 64424 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000