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SQD40030E_GE3

SQD40030E_GE3

  • 厂商:

    TFUNK(威世)

  • 封装:

    SOT428

  • 描述:

    MOSFETN-CH40VTO252AA

  • 数据手册
  • 价格&库存
SQD40030E_GE3 数据手册
Vishay Intertechnology, Inc. AEC-Q101 Qualified SQ Automotive MOSFETs ® nce , esista V 0 R ≥ 8 On- FOM w Lo Low and d an n h Hig inatio d ize Comb Buck m i t Op Side onous r Low ynch S for ® L DUA AK erP ow CP I R ET MM ASY , K PA D of ce ize sistan S the n-Re 2 / 1 ilar O Sim -8 SO ce f o n ize forma S r the r Pe 1/3 imila hS wit er, r n n Thi malle % s 55 0 % S DPAK > 5 Two n Tha ® AK erP 8L SO- -8L SO Pow ® AK erP 2-8 121 Pow ® AK erP w o P 8 nd ra e nn Thi aller % 75 % Sm K 55 D2 PA n Tha Gen IV c n Tre ed pli nd p Su a ie Reel D re nd Ba pe a d a in T Teste ly Ful ee -Fr ) b d (P e Lea n-Fre 0 % ge 10 Halo and T hFE wn Kno E D) (KG e i dD Goo t® Foo e l t t ® Li GE AK OLTA P r V e Pow HIGH S E I SER ® AK erP Pow ual LD 8 x www.vishay.com 8x 8L V I S H AY I N T E R T E C H N O L O G Y, I N C . SQ AUTOMOTIVE MOSFETs Focus Products Single N-Channel MOSFETs, 20 V to 300 V VDS (V) RDS(on) (Ω) Max. Qg (nC) VGS = 10 V VGS = 4.5 V VGS = 10 V 20 0.0013 0.0017 192 20 20 20 20 20 0.0035 0.0045 0.028 d 0.03 d 0.03 d 0.028 d 70 9b 9.3 b 4.5 b 5 30 0.0015 0.002 179 30 30 30 30 30 30 30 0.0032 0.0039 0.0038 0.0085 0.0175 0.024 0.0039 0.0042 0.005 0.01 0.0213 0.032 0.065 d 77 73.5 72 26 14 7.95 4.2 b 40 0.0011 0.0013 275 40 40 40 40 40 40 40 60 60 60 60 60 60 60 60 60 60 75 80 80 80 80 0.0012 0.0024 0.0032 0.0046 0.009 0.031 0.032 0.0019 0.002 0.0048 0.006 0.0063 0.012 0.0215 0.042 0.068 0.12 0.026 0.003 0.0032 0.007 0.021 0.0015 0.0031 140 65 65 72 25.5 8.7 8.5 110 128 39 96.5 82 45 27.4 4b 7.6 4.4 22 100 110 39 12 100 0.0038 100 100 100 150 150 150 200 250 300 300 0.0089 0.011 0.3 0.019 0.052 0.052 0.035 0.35 0.097 0.33 0.0056 0.01 0.036 0.042 0.0025 0.0063 0.0069 0.014 0.0261 0.063 0.075 0.015 0.032 0.011 0.027 125 0.0112 0.014 46 37 2.3 80 37.9 34 90 19 86 31 D2PAK (TO-263) TO-220 DPAK (TO-252) PowerPAK® 8x8L PowerPAK® SO-8L SO-8 PowerPAK® 1212-8 TSOP-6 SOT-23 PowerPAK® SC-70 SC-70-6 SQM120N021m3L SQD100N02-3m5L SQS420EN SQ3460EV SQ2310ES SQA410EJ SQM120N031m5L SQD100N03-3m2L SQJ410EP SQ4182EY SQS482EN SQ3410EV SQ2348ES SQ1470AEH SQM200N041m1L c SQJQ100EL SQJA44EP a SQD40030E SQ4184EY SQS484EN SQ2318AES SQ3418EV SQJQ466E a SQM50020EL SQJA62EP a SQP120N06 -06 SQD97N06-6m3L SQ4470EY SQS850EN SQ3426EV SQ2362ES SQ1440EH SQJ486EP SQJQ480E* SQM60030E SQJA80EP* SQSA80ENW a SQP120N10-3m8 SQM120N103m8 SQJQ410EL a SQD50N10-8m9L SQJ402EP SQ2398ES SQM85N15-19 SQP25N15 -52 SQD25N15-52 SQM60N20-35 SQD07N25-350H SQM35N30-97 SQD10N30-330H Dual N-Channel MOSFETs 20 30 30 40 40 40 40 60 60 60 60 75 80 80 100 100 0.007 0.0123 0.0035 0.007 0.0135 0.03 0.012 0.014 0.04 0.04 0.05 0.015 0.02 0.0086 0.0263 0.28 d 0.0086 0.0135 0.0092 0.0148 0.04 0.016 0.019 0.055 0.05 0.066 0.019 0.026 0.76 b 25.8 31.5 50 40 30 10 14 12 11.7 5 14 12.7 12 SQ1912EH SQJ910AEP SQ4282EY SQJQ904E a SQJB40EP a SQ4284EY SQS944ENW a SQJB60DP a SQJQ960EL a SQ4946AEY SQS966ENW a SQJ980AEP SQJQ980EL a SQJB80DP a SQJQ910EL a 0.0349 Notes: a. Target specification 15 b. VGS = 4.5 V SQJ974EP c. 7 lead d. Also rated at 2.5 V and / or 1.8 V or 1.5 V THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . SQ AUTOMOTIVE MOSFETs Focus Products Single P-Channel MOSFETs RDS(on) (Ω) Max. VDS (V) -12 -12 -12 -12 -20 -20 -30 -30 -30 -30 -30 -30 -30 -30 -40 -40 -40 -40 -40 -40 -40 -60 -60 -60 -60 -60 -60 -60 -60 -80 -80 -80 -100 -100 -150 -200 VGS = 10 V 0.036 0.0044 0.007 0.007 0.0085 0.021 0.043 0.17 0.175 0.003 0.0094 0.007 0.014 0.029 0.058 0.075 0.0067 0.0155 0.018 0.065 0.085 0.095 0.177 0.29 0.025 0.025 0.29 0.0101 0.040 1.77 0.213 Qg (nC) VGS = 4.5 V 0.006 d 0.0065 d 0.025 d 0.05 d 0.064 0.115 d 0.0071 0.011 0.011 0.02 0.06 0.07 0.37 0.3 0.0038 0.016 0.0010 0.023 0.047 0.092 0.145 0.0088 0.02 0.024 0.09 0.115 0.135 0.246 0.395 0.031 0.029 0.314 (6 V) 0.015 0.048 VGS = 10 V 109 b 101 b 21 b 8.4 b 17.7 3.4 b 169 103.5 97 75 17 b 15.4 4.5 4.2 b 527 103 170 74 17.7 b 15.3 10.5 180 98 73 25.5 26.5 15.3 9 3.6 b 91 101 11.5 125 96 7.4 71 0.221 (6 V) D2PAK (TO-263) TO-220 DPAK (TO-252) PowerPAK® 8x8L PowerPAK® SO-8L SO-8 PowerPAK® 1212-8 TSOP-6 SOT-23 SC-70-6 SQJ401EP SQ4153EY SQ3461EV SQ2315ES SQ3469EV SQ2351ES SQJ407EP SQP50P03-07 SQM50P03-07 SQD50P03-07 SQ4483EY SQS423EN SQ3481EV SQ2303ES SQ1431EH SQM40031EL SQD90P04-9m4L SQJ409EP SQ4401EY SQS401EN SQ3419EV SQ2319ADS SQP90P06-07L SQM120P06-07L SQD50P06-15L SQJ459EP SQ7415AEN SQ9407EY SQ3427EV SQ2361ES SQ1421EDH SQM50P08-25L SQD50P08-25L SQJ469EP SQ2337ES SQM120P10-10M1L SQD40P10-40L SQ2325ES SQJ431EP Dual P-Channel MOSFETs VDS (V) RDS(on) (Ω) VGS = 10 V VGS = 4.5 V VGS = 10 V 0.145 d 3.1 b 33 19.5 43.4 26.5 -20 -30 -30 -60 -60 0.017 0.035 0.048 0.085 Qg (nC) 0.036 0.065 0.0612 0.115 (6 V) PowerPAK® SO-8L SO-8 TSOP-6 SQ3985EV SQJ951EP SQ4949EY SQ4917EY SQJ963EP Asymmetric Dual N-Channel MOSFETs Channel 1 VDS (V) 12 20 40 40 100 Channel 2 RDS(on) (Ω) VGS = 10 V 0.0033 0.0037 0.0064 0.011 0.066 VGS = 4.5 V 0.0045 0.005 0.0076 0.013 Qg (nC) VGS = 10 V 35.9 29 31.8 22.5 RDS(on) (Ω) VGS = 10 V 0.0065 0.0088 0.016 0.022 0.025 VGS = 4.5 V 0.0093 0.0124 0.0188 0.026 PowerPAK® SO-8L Qg (nC) VGS = 10 V 14.5 12 13.5 13.1 SQJ202EP SQJ200EP SQJ940EP SQJ942EP SQJ990EP a N-Channel and P-Channel Pair MOSFETs N-Channel VDS (V) VGS = 10 V 20 30 30 40 P-Channel RDS(on) (Ω) 0.031 0.28 0.0092 Notes: a. Target specification VGS = 4.5 V 0.28 d 0.042 0.38 0.0112 b. VGS = 4.5 V Qg (nC) VGS = 10 V 0.93 b 5.9 1b 25.5 c. 7 lead RDS(on) (Ω) VGS = 10 V 0.07 0.94 0.027 VGS = 4.5 V 0.49 d 0.19 1.8 0.0435 PowerPAK® SO-8L SO-8 SC-70-6 Qg (nC) VGS = 10 V 1b 7.9 1.2 b 30.2 SQ1563AEH SQ4532AEY SQ1539EH SQJ500AEP d. Also rated at 2.5 V and / or 1.8 V or 1.5 V THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dedicated Automotive Processes Instill Quality and Robustness From Design to Manufacturing Advantages of SQ Automotive MOSFETs • AEC-Q101 qualified • Junction temperature up to 175 °C • Low on-resistance n- and p-channel TrenchFET® technologies • Innovative space-saving package options For the Following Applications • Engine management • Motor drives and actuators for: • Power steering • Braking • Transmission • Start-stop • ADAS KGD maximizes efficiency • Battery management • Body systems Innovative packaging saves valuable space • Automotive MOSFETs Product Portfolio www.vishay.com/mosfets/automotive-mosfets/tab/products/ • Automotive MOSFETs Parametric Search www.vishay.com/mosfets/automotive-mosfets/tab/param/ Useful Links Talk to Vishay about optimizing a MOSFET for your application AEC-Q101 QUALIFIED TS-16949 approved EU Annex II compliant © 2018 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED. MS6925-1810
SQD40030E_GE3 价格&库存

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SQD40030E_GE3
  •  国内价格
  • 1+13.81600
  • 10+11.50490
  • 100+9.15585
  • 500+7.33018
  • 1000+6.46757
  • 2000+5.61912

库存:2000