SQD40052EL
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
0.0060
RDS(on) (Ω) at VGS = 4.5 V
0.0078
ID (A)
Configuration
Package
G
40
N-Channel MOSFET
30
S
Single
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
40
Gate-source voltage
VGS
± 20
Continuous drain current a
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
V
30
30
IS
30
IDM
120
IAS
24
EAS
28.8
PD
UNIT
62
20
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
50
RthJC
2.4
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
°C/W
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
S21-0146-Rev. A, 22-Feb-2021
Document Number: 77607
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40052EL
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0 V, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.2
1.7
2.2
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
-
-
50
V
nA
μA
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = 40 V, TJ = 125 °C
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
250
μA
On-state drain current a
ID(on)
VGS = 10 V
VDS ≥ 5 V
20
-
-
A
VGS = 10 V
ID = 15 A
-
0.0046
0.0060
VGS = 4.5 V
ID = 10 A
-
0.0060
0.0078
VGS = 10 V
ID = 15 A, TJ = 125 °C
-
-
0.0091
VGS = 10 V
ID = 15 A, TJ = 175 °C
Drain-source on-state resistance a
Forward transconductance b
Dynamic
RDS(on)
gfs
VDS = 15 V, ID = 15 A
-
-
0.0107
-
62
-
-
1844
2600
-
527
750
-
56
80
Ω
S
b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay
time c
Rise time c
Turn-off delay time c
Fall time c
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 20 V, ID = 15 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 20 V, RL = 1.33 Ω
ID ≅ 15 A, VGEN = 10 V, Rg = 1 Ω
tf
-
34.5
52
-
6.1
-
-
6.6
-
1.45
2.91
4.37
-
12
25
-
7
15
-
28
50
-
10
20
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = 15 A, VGS = 0 V
-
-
120
-
0.83
1.5
V
-
26
52
ns
-
13
26
nC
-
11
-
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
15
-
IRM(REC)
-
-0.86
-
Body diode peak reverse recovery current
IF = 10 A, di/dt = 100 A/μs
A
ns
A
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0146-Rev. A, 22-Feb-2021
Document Number: 77607
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40052EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
350
10000
150
VGS = 10 V thru 6 V
280
1st line
2nd line
140
VGS = 4 V
100
70
1000
90
1st line
2nd line
2nd line
ID - Drain Current (A)
1000
210
2nd line
ID - Drain Current (A)
120
VGS = 5 V
TC = 125 °C
60
TC = 25 °C
100
30
VGS = 3 V
TC = -55 °C
10
0
0
2
4
6
8
10
0
10
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
Axis Title
10000
0.015
150
120
TC = 125 °C
90
TC = 25 °C
60
30
0.012
1000
0.009
VGS = 4.5 V
0.006
100
VGS = 10 V
0.003
10
0
0
0
15
30
45
60
0
75
16
32
Axis Title
1st line
2nd line
100
100
Crss
10
10
16
24
32
40
10000
ID = 15 A,
VDS = 20 V
8
1000
6
1st line
2nd line
1000
Coss
2nd line
VGS - Gate-to-Source Voltage (V)
10
Ciss
8
4
100
2
10
0
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S21-0146-Rev. A, 22-Feb-2021
80
Axis Title
10000
10 000
0
64
On-Resistance vs. Drain Current
Transconductance
1000
48
ID - Drain Current (A)
ID - Drain Current (A)
2nd line
C - Capacitance (pF)
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
2nd line
gfs - Transconductance (S)
TC = -55 °C
50
Document Number: 77607
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40052EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
10000
0.4
VGS = 10 V
ID = 15 A
0.1
VGS = 4.5 V
1.1
100
0.8
1000
-0.2
ID = 5 mA
-0.5
100
ID = 250 μA
-0.8
10
0.5
-50
-25
0
25
50
75
10
-1.1
100 125 150 175
-50
-25
0
25
75
100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Threshold Voltage
Axis Title
Axis Title
10000
1000
1st line
2nd line
0.012
TJ = 150 °C
100
0.006
TJ = 25 °C
10
0
2
4
6
8
ID = 1 mA
56
1000
54
1st line
2nd line
0.024
0.018
10000
58
2nd line
VDS - Drain-to-Source Voltage (V)
0.030
2nd line
RDS(on) - On-Resistance (Ω)
50
TJ - Junction Temperature (°C)
0
1st line
2nd line
1000
1.4
2nd line
VGS(th) - Variance (V)
1.7
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
52
100
50
10
48
-50
10
-25
0
25
50
75
100 125 150 175
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Axis Title
Axis Title
100
10000
1000
10000
IDM limited
1
100
0.1
TJ = 25 °C
10
0.3
0.6
0.9
1000
10
1.2
1.5
1 ms
ID limited
1
Limited by RDS(on)
10 ms
100 ms, 1 s,
10 s, DC
a
100
BVDSS limited
0.1
0.01
0
100 μs
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
100
1st line
2nd line
2nd line
IS - Source Current (A)
TJ = 150 °C
10
0.01
0.01
TC = 25 °C,
single pulse
10
0.1
1
10
VSD - Source-to-Drain Voltage (V)
VDS - Drain-to-Source Voltage (V)
Source Drain Diode Forward Voltage
Safe Operating Area
100
Note
a. VGS > minimum VGS at which RDS(on) is specified
S21-0146-Rev. A, 22-Feb-2021
Document Number: 77607
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40052EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
Duty cycle = 0.5
0.2
1000
0.1
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
1
0.05
0.02
100
0.01
single pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
Duty cycle = 0.5
1000
0.2
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
0.1
0.1
0.05
100
0.02
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77607.
S21-0146-Rev. A, 22-Feb-2021
Document Number: 77607
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
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Revision: 09-Jul-2021
1
Document Number: 91000