SQD40061EL
www.vishay.com
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
TO-252
TO
• TrenchFET® power MOSFET
• Package with low thermal resistance
Drain connected to tab
• 100 % Rg and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
D
S
G
Top View
G
PRODUCT SUMMARY
VDS (V)
-40
RDS(on) () at VGS = -10 V
0.0051
RDS(on) () at VGS = -4.5 V
0.0071
ID (A)
Configuration
Package
-100
D
Single
P-Channel MOSFET
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-40
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C a
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
V
-100
-60
IS
-97
IDM
-300
IAS
-41
EAS
84
PD
UNIT
107
35
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
50
RthJC
1.4
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
S18-0245-Rev. A, 26-Feb-18
Document Number: 75873
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40061EL
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
Dynamic
VDS
VGS = 0 V, ID = -250 μA
-40
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-2.0
-2.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = -40 V
-
-
-1
VGS = 0 V
VDS = -40 V, TJ = 125 °C
-
-
-50
VGS = 0 V
VDS = -40 V, TJ = 175 °C
-
-
-250
VGS = -10 V
VDS -5 V
-50
-
-
VGS = -10 V
ID = -30 A
-
0.0042
0.0051
VGS = -10 V
ID = -30 A, TJ = 125 °C
-
-
0.0079
VGS = -10 V
ID = -30 A, TJ = 175 °C
-
-
0.0094
VGS = -4.5 V
ID = -25 A
-
0.0059
0.0071
-
103
-
-
11 063
14 500
-
847
1100
-
757
1000
-
185
280
-
25
-
-
30
-
1.8
3.6
5.4
VDS = -30 V, ID = 15 A
V
nA
μA
A
S
b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total Gate Charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay time
c
Rise time c
Turn-off delay time c
Fall time c
VGS = 0 V
VGS = -10 V
VDS = -25 V, f = 1 MHz
VDS = -20 V, ID = -50 A
f = 1 MHz
td(on)
tr
td(off)
VDD = -20 V, RL = 0.4
ID -50 A, VGEN = -10 V, Rg = 1
tf
-
15
25
-
180
280
-
145
220
-
160
250
pF
nC
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = -30 A, VGS = 0 V
-
-
-300
-
-0.84
-1.5
V
-
59
120
ns
-
90
180
nC
-
32
-
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
27
-
IRM(REC)
-
-3.4
-
Body diode peak reverse recovery
current
IF = -30 A, di/dt = 100 A/μs
A
ns
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0245-Rev. A, 26-Feb-18
Document Number: 75873
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40061EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
300
10000
10000
180
VGS = 10 V thru 5 V
120
100
1000
108
1st line
2nd line
1000
VGS = 4 V
180
2nd line
ID - Drain Current (A)
144
1st line
2nd line
2nd line
ID - Drain Current (A)
240
72
TC = 25 °C
TC = 125 °C
100
36
60
VGS = 3 V
TC = -55 °C
0
0
10
0
2
4
6
8
10
0
10
2
4
6
8
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
180
10
0.012
10000
1000
108
TC = 125 °C
72
100
36
0
2nd line
RDS(on) - On-Resistance (Ω)
TC = 25 °C
144
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = -55 °C
20
40
60
80
0.008
VGS = 4.5 V
0.006
0.004
VGS = 10 V
0.002
10
0
0.010
0
100
20
ID - Drain Current (A)
2nd line
Axis Title
100
Crss
3000
Coss
0
10
24
32
40
10000
ID = 100 A
VDS = 20 V
8
1000
6
1st line
2nd line
6000
2nd line
VGS - Gate-to-Source Voltage (V)
1000
9000
1st line
2nd line
2nd line
C - Capacitance (pF)
Ciss
16
4
100
2
0
10
0
40
80
120
160
VDS - Drain-to-Source Voltage (V)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S18-0245-Rev. A, 26-Feb-18
100
10
10000
8
80
Axis Title
15 000
0
60
On-Resistance vs. Drain Current
Transconductance
12 000
40
ID - Drain Current (A)
2nd line
200
Document Number: 75873
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40061EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
ID = 30 A
1000
1.4
VGS = 4.5 V
1.1
100
0.8
0.5
25
50
TJ = 150 °C
1
TJ = 25 °C
100
0.1
75 100 125 150 175
10
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
0.020
0.5
10000
10000
0.1
1000
0.012
TJ = 125 °C
0.008
100
0.004
ID = -5 mA
1000
-0.3
1st line
2nd line
2nd line
VGS(th) Variance (V)
0.016
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
1000
0.01
10
0
10
1st line
2nd line
2nd line
IS - Source Current (A)
1.7
-50 -25
10000
VGS = 10 V
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
-0.7
100
ID = -250 μA
-1.1
TJ = 25 °C
0.000
10
0
2
4
6
8
-1.5
10
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
2nd line
VDS - Drain-to-Source Voltage (V)
10000
9980.02
9960.04
9940.06
9920.08
9900.1
9880.12
9860.14
9840.16
9820.18
9800.2
9780.22
9760.24
9740.26
9720.28
9700.3
9680.32
9660.34
9640.36
9620.38
9600.4
9580.42
9560.44
9540.46
9520.48
9500.5
9480.52
9460.54
9440.56
9420.58
9400.6
9380.62
9360.64
9340.66
9320.68
9300.7
9280.72
9260.74
9240.76
9220.78
9200.8
9180.82
9160.84
9140.86
9120.88
9100.9
9080.92
9060.94
9040.96
9020.98
9001
8981.02
8961.04
8941.06
8921.08
8901.1
8881.12
8861.14
8841.16
8821.18
8801.2
8781.22
8761.24
8741.26
8721.28
8701.3
8681.32
8661.34
8641.36
8621.38
8601.4
8581.42
8561.44
8541.46
8521.48
8501.5
8481.52
8461.54
8441.56
8421.58
8401.6
8381.62
8361.64
8341.66
8321.68
8301.7
8281.72
8261.74
8241.76
8221.78
8201.8
8181.82
8161.84
8141.86
8121.88
8101.9
8081.92
8061.94
8041.96
8021.98
8002
7982.02
7962.04
7942.06
7922.08
7902.1
7882.12
7862.14
7842.16
7822.18
7802.2
7782.22
7762.24
7742.26
7722.28
7702.3
7682.32
7662.34
7642.36
7622.38
7602.4
7582.42
7562.44
7542.46
7522.48
7502.5
7482.52
7462.54
7442.56
7422.58
7402.6
7382.62
7362.64
7342.66
7322.68
7302.7
7282.72
7262.74
7242.76
7222.78
7202.8
7182.82
7162.84
7142.86
7122.88
7102.9
7082.92
7062.94
7042.96
7022.98
7003
6983.02
6963.04
6943.06
6923.08
6903.1
6883.12
6863.14
6843.16
6823.18
6803.2
6783.22
6763.24
6743.26
6723.28
6703.3
6683.32
6663.34
6643.36
6623.38
6603.4
6583.42
6563.44
6543.46
6523.48
6503.5
6483.52
6463.54
6443.56
6423.58
6403.6
6383.62
6363.64
6343.66
6323.68
6303.7
6283.72
6263.74
6243.76
6223.78
6203.8
6183.82
6163.84
6143.86
6123.88
6103.9
6083.92
6063.94
6043.96
6023.98
6004
5984.02
5964.04
5944.06
5924.08
5904.1
5884.12
5864.14
5844.16
5824.18
5804.2
5784.22
5764.24
5744.26
5724.28
5704.3
5684.32
5664.34
5644.36
5624.38
5604.4
5584.42
5564.44
5544.46
5524.48
5504.5
5484.52
5464.54
5444.56
5424.58
5404.6
5384.62
5364.64
5344.66
5324.68
5304.7
5284.72
5264.74
5244.76
5224.78
5204.8
5184.82
5164.84
5144.86
5124.88
5104.9
5084.92
5064.94
5044.96
5024.98
5005
4985.02
4965.04
4945.06
4925.08
4905.1
4885.12
4865.14
4845.16
4825.18
4805.2
4785.22
4765.24
4745.26
4725.28
4705.3
4685.32
4665.34
4645.36
4625.38
4605.4
4585.42
4565.44
4545.46
4525.48
4505.5
4485.52
4465.54
4445.56
4425.58
4405.6
4385.62
4365.64
4345.66
4325.68
4305.7
4285.72
4265.74
4245.76
4225.78
4205.8
4185.82
4165.84
4145.86
4125.88
4105.9
4085.92
4065.94
4045.96
4025.98
4006
3986.02
3966.04
3946.06
3926.08
3906.1
3886.12
3866.14
3846.16
3826.18
3806.2
3786.22
3766.24
3746.26
3726.28
3706.3
3686.32
3666.34
3646.36
3626.38
3606.4
3586.42
3566.44
3546.46
3526.48
3506.5
3486.52
3466.54
3446.56
3426.58
3406.6
3386.62
3366.64
3346.66
3326.68
3306.7
3286.72
3266.74
3246.76
3226.78
3206.8
3186.82
3166.84
3146.86
3126.88
3106.9
3086.92
3066.94
3046.96
3026.98
3007
2987.02
2967.04
2947.06
2927.08
2907.1
2887.12
2867.14
2847.16
2827.18
2807.2
2787.22
2767.24
2747.26
2727.28
2707.3
2687.32
2667.34
2647.36
2627.38
2607.4
2587.42
2567.44
2547.46
2527.48
2507.5
2487.52
2467.54
2447.56
2427.58
2407.6
2387.62
2367.64
2347.66
2327.68
2307.7
2287.72
2267.74
2247.76
2227.78
2207.8
2187.82
2167.84
2147.86
2127.88
2107.9
2087.92
2067.94
2047.96
2027.98
2008
1988.02
1968.04
1948.06
1928.08
1908.1
1888.12
1868.14
1848.16
1828.18
1808.2
1788.22
1768.24
1748.26
1728.28
1708.3
1688.32
1668.34
1648.36
1628.38
1608.4
1588.42
1568.44
1548.46
1528.48
1508.5
1488.52
1468.54
1448.56
1428.58
1408.6
1388.62
1368.64
1348.66
1328.68
1308.7
1288.72
1268.74
1248.76
1228.78
1208.8
1188.82
1168.84
1148.86
1128.88
1108.9
1088.92
1068.94
1048.96
1028.98
1009
989.02
969.04
949.06
929.08
909.1
889.12
869.14
849.16
829.18
809.2
789.22
769.24
749.26
729.28
709.3
689.32
669.34
649.36
629.38
609.4
589.42
569.44
549.46
529.48
509.5
489.52
469.54
449.56
429.58
409.6
389.62
369.64
349.66
329.68
309.7
289.72
269.74
249.76
229.78
209.8
189.82
169.84
149.86
129.88
109.9
89.92
69.94
49.96
29.98
10
ID = 1 mA
-46
-49
-52
-55
-58
-50 -25
0
25
50
1st line
2nd line
Axis Title
-43
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S18-0245-Rev. A, 26-Feb-18
Document Number: 75873
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40061EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1000
10000
IDM limited
100 μs
1000
ID limited
10
1
1 ms
10 ms
100 ms, 1 s, 10 s, DC
1st line
2nd line
2nd line
ID - Drain Current (A)
100
Limited by RDS(on) (1)
100
0.1
TC = 25 °C
single pulse
0.01
0.01
(1)
BVDSS limited
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Axis Title
1
Duty cycle = 0.5
0.1
0.2
Notes
0.1
PDM
t1
0.05
t2
1. Duty cycle, D = t1
t2
2. Per unit base = RthJA = 50 °C/W
3. TJM - TA = PDMZthJA (t)
0.02
Single pulse
0.01
0.0001
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
0.001
0.01
0.1
1
10
100
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
S18-0245-Rev. A, 26-Feb-18
Document Number: 75873
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40061EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1
Duty cycle = 0.5
1000
0.2
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
0.1
0.1
100
0.05
0.02
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to- Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75873.
S18-0245-Rev. A, 26-Feb-18
Document Number: 75873
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
Note
• Dimension L3 is for reference only.
Revision: 02-Sep-13
Document Number: 64424
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
www.vishay.com
3
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Revision: 01-Jan-2023
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Document Number: 91000
