SQD40081EL
www.vishay.com
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
TO-252
TO
• TrenchFET® power MOSFET
• Package with low thermal resistance
Drain connected to tab
• 100 % Rg and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
D
S
G
Top View
PRODUCT SUMMARY
G
VDS (V)
-40
RDS(on) () at VGS = -10 V
0.0085
RDS(on) () at VGS = -4.5 V
0.0105
ID (A)
Configuration
Package
-50
D
Single
TO-252
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-40
Gate-source voltage
VGS
± 20
Continuous drain current a
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
V
-50
-38
IS
-50
IDM
-200
IAS
-35
EAS
61
PD
UNIT
71
23
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
50
RthJC
2.1
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
S17-1624-Rev. A, 23-Oct-17
Document Number: 75677
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40081EL
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
Dynamic
VDS
VGS = 0 V, ID = -250 μA
-40
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-2.0
-2.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = -40 V
-
-
-1
VGS = 0 V
VDS = -40 V, TJ = 125 °C
-
-
-50
VGS = 0 V
VDS = -40 V, TJ = 175 °C
-
-
-200
VGS = -10 V
VDS -5 V
-50
-
-
VGS = -10 V
ID = -25 A
-
0.0070
0.0085
VGS = -10 V
ID = -25 A, TJ = 125 °C
-
-
0.0110
VGS = -10 V
ID = -25 A, TJ = 175 °C
-
-
0.0131
VGS = -4.5 V
ID = -20 A
VDS = -15 V, ID = -25 A
-
0.0086
0.0105
-
92
-
V
nA
μA
A
S
b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay
time c
Rise time c
Turn-off delay time c
Fall time c
VGS = 0 V
VGS = -10 V
VDS = -25 V, f = 1 MHz
VDS = -20 V, ID = -50 A
f = 1 MHz
td(on)
tr
td(off)
VDD = -20 V, RL = 0.4
ID -50 A, VGEN = -10 V, Rg = 1
tf
-
7365
9950
-
576
800
-
548
750
-
138
210
-
21
-
-
21
-
1.5
3.15
4.8
-
13
20
-
81
130
-
103
160
-
153
250
pF
nC
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = -50 A, VGS = 0 V
-
-
-200
-
-0.96
-1.5
V
-
56
120
ns
-
83
170
nC
-
34
-
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
22
-
IRM(REC)
-
-3.8
-
Body diode peak reverse recovery
current
IF = -30 A, di/dt = 100 A/μs
A
ns
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1624-Rev. A, 23-Oct-17
Document Number: 75677
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40081EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
300
10000
VGS = 10 V thru 5 V
VGS = 4 V
120
100
1000
108
1st line
2nd line
1000
180
2nd line
ID - Drain Current (A)
144
1st line
2nd line
2nd line
ID - Drain Current (A)
240
10000
180
72
100
TC = 25 °C
TC = 125 °C
36
60
VGS = 3 V
TC = -55 °C
0
0
10
0
2
4
6
8
10
0
10
2
4
6
8
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
10
Axis Title
150
10000
TC = -55 °C
0.025
TC = 125 °C
60
100
30
0
2nd line
RDS(on) - On-Resistance (Ω)
1000
90
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = 25 °C
120
10
0
16
32
48
64
0.020
0.015
VGS = 4.5 V
0.010
VGS = 10 V
0.005
0.000
80
0
16
32
Transconductance
On-Resistance vs. Drain Current
Axis Title
Axis Title
4000
100
2000
Coss
Crss
10
8
16
24
32
40
10000
ID = 50 A
VDS = 20 V
8
1000
6
1st line
2nd line
1st line
2nd line
2nd line
C - Capacitance (pF)
1000
6000
2nd line
VGS - Gate-to-Source Voltage (V)
Ciss
8000
4
100
2
0
10
0
30
60
90
120
VDS - Drain-to-Source Voltage (V)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S17-1624-Rev. A, 23-Oct-17
80
10
10000
0
64
ID - Drain Current (A)
2nd line
10 000
0
48
ID - Drain Current (A)
2nd line
150
Document Number: 75677
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40081EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
VGS = 10 V
2nd line
IS - Source Current (A)
1.7
1000
1.4
VGS = 4.5 V
1.1
100
0.8
0.5
25
50
TJ = 150 °C
1
100
0.1
75 100 125 150 175
TJ = 25 °C
10
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
0.6
10000
0.040
10000
0.2
1000
0.024
0.016
100
TJ = 125 °C
0.008
1000
-0.2
1st line
2nd line
2nd line
VGS(th) Variance (V)
0.032
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
1000
0.01
10
0
10
1st line
2nd line
ID = 25 A
-50 -25
10000
100
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
ID = 5 mA
-0.6
100
-1.0
ID = 250 μA
TJ = 25 °C
0.000
10
0
2
4
6
8
-1.4
10
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
ID = 1 mA
-46
-49
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
-43
-52
-55
-58
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S17-1624-Rev. A, 23-Oct-17
Document Number: 75677
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40081EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1000
10000
IDM limited
2nd line
ID - Drain Current (A)
100
100 μs
1000
10
1 ms
10 ms
100 ms
1 s, 10 s, DC
ID limited
1
Limited by RDS(on) (1)
100
0.1
TC = 25 °C
Single pulse
0.01
0.01
(1)
BVDSS limited
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Axis Title
1
Duty Cycle = 0.5
0.1
1000
Notes:
0.2
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
PDM
0.1
t1
0.05
t2
t1
t2
100
0.02
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
S17-1624-Rev. A, 23-Oct-17
Document Number: 75677
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD40081EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1
Duty Cycle = 0.5
1000
0.2
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
0.1
0.1
100
0.05
0.02
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75677.
S17-1624-Rev. A, 23-Oct-17
Document Number: 75677
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
Note
• Dimension L3 is for reference only.
Revision: 02-Sep-13
Document Number: 64424
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
www.vishay.com
3
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2023
1
Document Number: 91000
