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SQD40131EL_GE3

SQD40131EL_GE3

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO252-3

  • 描述:

    MOSFET P-CH 40V 50A TO252AA

  • 数据手册
  • 价格&库存
SQD40131EL_GE3 数据手册
SQD40131EL www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 °C MOSFET FEATURES TO-252 TO • • • • • Drain connected to tab TrenchFET® power MOSFET Package with low thermal resistance 100 % Rg and UIS tested AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S D G S Top View PRODUCT SUMMARY VDS (V) G -40 RDS(on) () at VGS = -10 V 0.0115 RDS(on) () at VGS = -4.5 V 0.0150 ID (A) -50 Configuration D Single Package P-Channel MOSFET TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -40 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID V -50 -31 IS -50 IDM -180 IAS -27 EAS 36.4 PD UNIT 62 20 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 50 RthJC 2.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) S17-1302-Rev. A, 21-Aug-17 Document Number: 76864 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40131EL www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -40 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 -2 -2.5 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 Zero gate voltage drain current IDSS Gate-source threshold voltage On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance b RDS(on) gfs VGS = 0 V VDS = -40 V - - -1 VGS = 0 V VDS = -40 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -40 V, TJ = 175 °C - - -250 VGS = -10 V VDS  5 V -30 - - VGS = -10 V ID = -30 A - 0.0095 0.0115 VGS = -10 V ID = -30 A, TJ = 125 °C - - 0.0171 VGS = -10 V ID = -30 A, TJ = 175 °C - - 0.0203 VGS = -4.5 V ID = -25 A - 0.0121 0.0150 - 71 - - 4872 6600 - 344 500 - 316 450 - 76 115 - 11.5 - - 13.5 - VDS = -15 V, ID = -30 A V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Rise time c Turn-off delay time Fall time c VDS = -20 V, ID = -30 A td(on) tr c VGS = -10 V VDS = -25 V, f = 1 MHz f = 1 MHz Rg Turn-on delay time c VGS = 0 V td(off) VDD = -20 V, RL = 0.7  ID  -30 A, VGEN = -10 V, Rg = 1  tf Source-Drain Diode Ratings and Characteristics pF nC  2 4 6 - 13 20 - 7 15 - 66 100 - 28 45 - - -180 A - -0.9 -1.5 V ns b Pulsed current a ISM Forward voltage VSD IF = -30 A, VGS = 0 V Body diode reverse recovery time trr - 43 90 ns Body diode reverse recovery charge Qrr - 45 100 nC Reverse recovery fall time ta - 26 - Reverse recovery rise time tb - 17 - IRM(REC) - -2.8 - Body diode peak reverse recovery current IF = -30 A, di/dt = 100 A/μs ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1302-Rev. A, 21-Aug-17 Document Number: 76864 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40131EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 200 10000 VGS = 10 V thru 5 V VGS = 4 V 80 100 1000 60 40 TC = 125 °C 100 20 40 TC = 25 °C VGS = 3V TC = -55 °C 0 0 10 0 2 4 6 8 10 0 10 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 10 Axis Title 0.030 7000 0.024 10000 5600 0.018 VGS =4.5 V 0.012 VGS = 10 V 0.006 Ciss 1000 4200 1st line 2nd line 2nd line C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) 80 1st line 2nd line 2nd line ID - Drain Current (A) 160 10000 100 2800 100 1400 0.000 0 16 32 48 64 Coss Crss 0 80 0 ID - Drain Current (A) 2nd line 10 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) 2nd line Capacitance On-Resistance vs. Drain Current Axis Title Axis Title 100 10 10000 10000 TC = 125 °C 40 TC = 25 °C 100 20 0 10 0 15 30 45 60 75 ID = 30 A VDS = 20 V 8 1000 6 1st line 2nd line 1000 60 2nd line VGS - Gate-to-Source Voltage (V) 80 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 4 100 2 0 10 0 20 40 60 80 ID - Drain Current (A) 2nd line Qg - Total Gate Charge (nC) 2nd line Transconductance Gate Charge S17-1302-Rev. A, 21-Aug-17 100 Document Number: 76864 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40131EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 1000 1 TJ = 25 °C 100 0.1 0.01 10 0.4 0.6 0.8 1.0 1000 0.030 0.020 TJ = 150 °C 100 0.010 TJ = 25 °C 0.000 10 0 1.2 2 4 10 VGS - Gate-to-Source Voltage (V) 2nd line Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 60 1000 1st line 2nd line -0.1 ID = 5 mA -0.5 100 -0.9 ID = 250 μA -1.3 2nd line VDS - Drain-to-Source Voltage (V) 10000 0.3 2nd line VGS(th) Variance (V) 8 VSD - Source-to-Drain Voltage (V) 2nd line 0.7 0 25 50 10000 9980.02 9960.04 9940.06 9920.08 9900.1 9880.12 9860.14 9840.16 9820.18 9800.2 9780.22 9760.24 9740.26 9720.28 9700.3 9680.32 9660.34 9640.36 9620.38 9600.4 9580.42 9560.44 9540.46 9520.48 9500.5 9480.52 9460.54 9440.56 9420.58 9400.6 9380.62 9360.64 9340.66 9320.68 9300.7 9280.72 9260.74 9240.76 9220.78 9200.8 9180.82 9160.84 9140.86 9120.88 9100.9 9080.92 9060.94 9040.96 9020.98 9001 8981.02 8961.04 8941.06 8921.08 8901.1 8881.12 8861.14 8841.16 8821.18 8801.2 8781.22 8761.24 8741.26 8721.28 8701.3 8681.32 8661.34 8641.36 8621.38 8601.4 8581.42 8561.44 8541.46 8521.48 8501.5 8481.52 8461.54 8441.56 8421.58 8401.6 8381.62 8361.64 8341.66 8321.68 8301.7 8281.72 8261.74 8241.76 8221.78 8201.8 8181.82 8161.84 8141.86 8121.88 8101.9 8081.92 8061.94 8041.96 8021.98 8002 7982.02 7962.04 7942.06 7922.08 7902.1 7882.12 7862.14 7842.16 7822.18 7802.2 7782.22 7762.24 7742.26 7722.28 7702.3 7682.32 7662.34 7642.36 7622.38 7602.4 7582.42 7562.44 7542.46 7522.48 7502.5 7482.52 7462.54 7442.56 7422.58 7402.6 7382.62 7362.64 7342.66 7322.68 7302.7 7282.72 7262.74 7242.76 7222.78 7202.8 7182.82 7162.84 7142.86 7122.88 7102.9 7082.92 7062.94 7042.96 7022.98 7003 6983.02 6963.04 6943.06 6923.08 6903.1 6883.12 6863.14 6843.16 6823.18 6803.2 6783.22 6763.24 6743.26 6723.28 6703.3 6683.32 6663.34 6643.36 6623.38 6603.4 6583.42 6563.44 6543.46 6523.48 6503.5 6483.52 6463.54 6443.56 6423.58 6403.6 6383.62 6363.64 6343.66 6323.68 6303.7 6283.72 6263.74 6243.76 6223.78 6203.8 6183.82 6163.84 6143.86 6123.88 6103.9 6083.92 6063.94 6043.96 6023.98 6004 5984.02 5964.04 5944.06 5924.08 5904.1 5884.12 5864.14 5844.16 5824.18 5804.2 5784.22 5764.24 5744.26 5724.28 5704.3 5684.32 5664.34 5644.36 5624.38 5604.4 5584.42 5564.44 5544.46 5524.48 5504.5 5484.52 5464.54 5444.56 5424.58 5404.6 5384.62 5364.64 5344.66 5324.68 5304.7 5284.72 5264.74 5244.76 5224.78 5204.8 5184.82 5164.84 5144.86 5124.88 5104.9 5084.92 5064.94 5044.96 5024.98 5005 4985.02 4965.04 4945.06 4925.08 4905.1 4885.12 4865.14 4845.16 4825.18 4805.2 4785.22 4765.24 4745.26 4725.28 4705.3 4685.32 4665.34 4645.36 4625.38 4605.4 4585.42 4565.44 4545.46 4525.48 4505.5 4485.52 4465.54 4445.56 4425.58 4405.6 4385.62 4365.64 4345.66 4325.68 4305.7 4285.72 4265.74 4245.76 4225.78 4205.8 4185.82 4165.84 4145.86 4125.88 4105.9 4085.92 4065.94 4045.96 4025.98 4006 3986.02 3966.04 3946.06 3926.08 3906.1 3886.12 3866.14 3846.16 3826.18 3806.2 3786.22 3766.24 3746.26 3726.28 3706.3 3686.32 3666.34 3646.36 3626.38 3606.4 3586.42 3566.44 3546.46 3526.48 3506.5 3486.52 3466.54 3446.56 3426.58 3406.6 3386.62 3366.64 3346.66 3326.68 3306.7 3286.72 3266.74 3246.76 3226.78 3206.8 3186.82 3166.84 3146.86 3126.88 3106.9 3086.92 3066.94 3046.96 3026.98 3007 2987.02 2967.04 2947.06 2927.08 2907.1 2887.12 2867.14 2847.16 2827.18 2807.2 2787.22 2767.24 2747.26 2727.28 2707.3 2687.32 2667.34 2647.36 2627.38 2607.4 2587.42 2567.44 2547.46 2527.48 2507.5 2487.52 2467.54 2447.56 2427.58 2407.6 2387.62 2367.64 2347.66 2327.68 2307.7 2287.72 2267.74 2247.76 2227.78 2207.8 2187.82 2167.84 2147.86 2127.88 2107.9 2087.92 2067.94 2047.96 2027.98 2008 1988.02 1968.04 1948.06 1928.08 1908.1 1888.12 1868.14 1848.16 1828.18 1808.2 1788.22 1768.24 1748.26 1728.28 1708.3 1688.32 1668.34 1648.36 1628.38 1608.4 1588.42 1568.44 1548.46 1528.48 1508.5 1488.52 1468.54 1448.56 1428.58 1408.6 1388.62 1368.64 1348.66 1328.68 1308.7 1288.72 1268.74 1248.76 1228.78 1208.8 1188.82 1168.84 1148.86 1128.88 1108.9 1088.92 1068.94 1048.96 1028.98 1009 989.02 969.04 949.06 929.08 909.1 889.12 869.14 849.16 829.18 809.2 789.22 769.24 749.26 729.28 709.3 689.32 669.34 649.36 629.38 609.4 589.42 569.44 549.46 529.48 509.5 489.52 469.54 449.56 429.58 409.6 389.62 369.64 349.66 329.68 309.7 289.72 269.74 249.76 229.78 209.8 189.82 169.84 149.86 129.88 109.9 89.92 69.94 49.96 29.98 10 56 ID = 1 mA 52 48 44 40 10 -50 -25 -50 -25 75 100 125 150 175 TJ - Temperature (°C) 2nd line 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature Threshold Voltage Axis Title Axis Title 2.0 1000 10000 10000 IDM limited VGS = 10 V ID = 30 A 100 1000 1.4 VGS = 4.5 V 1.1 100 2nd line ID - Drain Current (A) 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 6 1st line 2nd line 0.2 0.040 100 μs 1000 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC ID limited 1 1st line 2nd line 0 10000 1st line 2nd line TJ = 150 °C 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) 0.050 10000 100 100 Limited by RDS(on) (1) 0.1 0.8 TC = 25 °C Single pulse 0.5 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line On-Resistance vs. Junction Temperature S17-1302-Rev. A, 21-Aug-17 0.01 0.01 (1) BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 76864 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40131EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76864. S17-1302-Rev. A, 21-Aug-17 Document Number: 76864 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T13-0592-Rev. A, 02-Sep-13 DWG: 6019 Note • Dimension L3 is for reference only. Revision: 02-Sep-13 Document Number: 64424 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000
SQD40131EL_GE3 价格&库存

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SQD40131EL_GE3
    •  国内价格
    • 1+6.85800
    • 10+6.70680
    • 30+6.59880

    库存:3