SQD50N04-4m5L
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Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified
40
RDS(on) () at VGS = 10 V
0.0035
RDS(on) () at VGS = 4.5 V
0.0042
ID (A)
• 100 % Rg and UIS Tested
50
Configuration
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Single
TO-252
D
G
Drain Connected to Tab
D
G
S
N-Channel MOSFET
S
Top View
ORDERING INFORMATION
Package
TO-252
Lead (Pb)-free and Halogen-free
SQD50N04-4m5L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Currenta
Continuous Source Current (Diode
TC = 125 °C
Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
50
50
IS
50
IDM
200
IAS
55
EAS
151
PD
UNIT
136
45
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mountc
RthJA
50
RthJC
1.1
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
S12-2006-Rev. C, 20-Aug-12
Document Number: 70623
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SQD50N04-4m5L
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0 V, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
-
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
-
-
50
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 40 V, TJ = 125 °C
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
150
On-State Drain Currenta
ID(on)
VGS = 10 V
VDS5 V
50
-
-
VGS = 10 V
ID = 20 A
-
0.0030
0.0035
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.0056
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.0068
VGS = 4.5 V
ID = 20 A
-
0.0035
0.0042
-
105
-
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
gfs
VDS = 15 V, ID = 15 A
V
nA
μA
A
S
Dynamicb
-
4880
5860
-
560
670
Crss
-
250
300
Qg
-
85
130
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 20 V, ID = 50 A
-
14
-
-
14
-
f = 1 MHz
1
2
3
-
9
11
VDD = 20 V, RL = 0.4
ID 50 A, VGEN = 10 V, Rg = 1
-
11
14
-
39
47
-
11
14
-
-
200
A
-
0.9
1.5
V
td(on)
tr
td(off)
pF
tf
nC
ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 30 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2006-Rev. C, 20-Aug-12
Document Number: 70623
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50N04-4m5L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
100
V GS = 10 V thru 4 V
80
ID - Drain Current (A)
ID - Drain Current (A)
80
60
40
20
60
40
T C = 25 °C
20
V GS = 3 V
T C = 125 °C
0
0
3
6
9
12
0
15
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
0.010
240
RDS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
1
VDS - Drain-to-Source Voltage (V)
300
T C = - 55 °C
180
T C = 25 °C
120
T C = 125 °C
60
0.008
0.006
V GS = 4.5 V
0.004
0.002
0
V GS = 10 V
0.000
0
14
28
42
56
70
ID - Drain Current (A)
0
40
60
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
7000
20
80
100
10
ID = 50 A
VGS - Gate-to-Source Voltage (V)
6000
Ciss
C - Capacitance (pF)
T C = - 55 °C
0
5000
4000
3000
2000
Coss
1000
8
6
V DS = 20 V
4
2
Crss
0
0
0
10
20
30
40
0
10
20
30
40
50
60
70
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S12-2006-Rev. C, 20-Aug-12
80
90
Document Number: 70623
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50N04-4m5L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
52
ID = 10 mA
ID = 20 A
2.0
VDS - Drain-to-Source Voltage (V)
RDS(on) - On-Resistance (Normalized)
2.3
V GS = 10 V
1.7
1.4
V GS = 4.5 V
1.1
0.8
0.5
- 50
- 25
0
25
50
75
100
125
150
50
48
46
44
42
40
- 50
175
- 25
TJ - Junction Temperature (°C)
0.030
10
0.024
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
100
T J = 150 °C
T J = 25 °C
0.1
175
0.018
0.012
T J = 150 °C
0.01
0.006
0.001
0.000
0
150
Drain Source Breakdown vs. Junction Temperature
On-Resistance vs. Junction Temperature
1
0
25
50
75 100 125
TJ - Junction Temperature (°C)
T J = 25 °C
VSD - Source-to-Drain Voltage (V)
4
6
8
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.2
0.4
0.6
0.8
1.0
0
1.2
2
10
0.7
VGS(th) Variance (V)
0.2
ID = 5 mA
- 0.3
- 0.8
ID = 250 μA
- 1.3
- 1.8
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
Threshold Voltage
S12-2006-Rev. C, 20-Aug-12
Document Number: 70623
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50N04-4m5L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
ID - Drain Current (A)
100
Limited by R DS(on)*
100 μs
ID Limited
10
1 ms
10 ms
100 ms, 1 s, 10 s, DC
1
0.1
TC = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-2006-Rev. C, 20-Aug-12
Document Number: 70623
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50N04-4m5L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70623.
S12-2006-Rev. C, 20-Aug-12
Document Number: 70623
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
Note
• Dimension L3 is for reference only.
Revision: 02-Sep-13
Document Number: 64424
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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3
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Revision: 01-Jan-2023
1
Document Number: 91000