SQD50N06-09L_GE3

SQD50N06-09L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.013 ID (A) • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested 50 Configuration • Compliant to RoHS Directive 2002/95/EC Single • AEC-Q101 Qualifiedd D TO-252 G Drain Connected to Tab G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD50N06-09L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °Ca Continuous Drain Current Continuous Source Current (Diode ID TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Energy Single Pulse Avalanche Current Maximum Power Dissipationb L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range V 50 49 IS 50 IDM 200 IAS 48 EAS 115 PD TC = 125 °C UNIT 136 45 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Case (Drain) RthJA 50 RthJC 1.1 °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S11-2065-Rev. B, 24-Oct-11 1 Document Number: 68901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD50N06-09L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VGS = 0 V, ID = 250 μA 60 - - VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductanceb VDS VGS(th) RDS(on) - - ± 100 VGS = 0 V VDS = 60 V - - 1.0 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250 VGS = 10 V VDS5 V 50 - - VGS = 10 V ID = 20 A - 0.0071 0.0090 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.016 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.019 VGS = 4.5 V ID = 10 A - 0.0094 0.013 - 62 - - 2451 3065 gfs VDS = 15 V, ID = 20 A V nA μA A  S Dynamicb Input Capacitance Ciss Output Capacitance Coss - 435 545 Reverse Transfer Capacitance Crss - 192 240 Total Gate Chargec Qg - 48 72 - 7.1 - - 13.5 - 0.85 1.7 2.6 - 10 15 - 11 17 - 27 41 - 8 12 - - 200 A - 0.82 1.5 V Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Qgs Fall Timec Source-Drain Diode Ratings and VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 30 V, ID = 50 A Qgd f = 1 MHz Rg td(on) tr Timec VGS = 0 V td(off) VDD = 30 V, RL = 0.6  ID  50 A, VGEN = 10 V, Rg = 1  tf pF nC  ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 20 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2065-Rev. B, 24-Oct-11 2 Document Number: 68901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD50N06-09L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 100 V GS = 10 V thru 5 V 80 ID - Drain Current (A) ID - Drain Current (A) 80 V GS = 4 V 60 40 60 40 T C = 25 °C 20 20 V GS = 3 V T C = 125 °C V GS = 2 V 0 4 8 12 16 0 20 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 120 100 6 g fs - Transconductance (S) 8 ID - Drain Current (A) 2 VDS - Drain-to-Source Voltage (V) 10 T C = 25 °C 4 2 T C = - 55 °C 0 0 1 2 T C = - 55 °C 80 T C = 25 °C 60 40 T C = 125 °C 20 T C = 125 °C 3 4 0 0 5 10 20 30 40 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Transconductance 50 4000 0.025 0.020 3000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) T C = - 55 °C 0 0 0.015 V GS = 4.5 V 0.010 V GS = 10 V Ciss 2000 1000 Coss 0.005 0 Crss 0 0 20 40 60 80 0 100 ID - Drain Current (A) 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current S11-2065-Rev. B, 24-Oct-11 10 3 Document Number: 68901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD50N06-09L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 2.5 ID = 20 A 8 2.1 6 4 V GS = 10 V (Normalized) V DS = 30 V RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 50 A 2 1.7 V GS = 4.5 V 1.3 0.9 0 0 10 20 30 40 0.5 - 50 50 - 25 0 50 75 100 125 150 175 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 100 0.05 10 0.04 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 25 T J = 150 °C 1 T J = 25 °C 0.1 0.03 0.02 T J = 125 °C T J = 25 °C 0.01 0.01 0 0.001 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 75 0.5 VDS - Drain-to-Source Voltage (V) ID = 10 mA VGS(th) Variance (V) 0.1 - 0.3 ID = 5 mA - 0.7 ID = 250 μA - 1.1 - 1.5 - 50 - 25 0 25 50 75 100 125 150 69 66 63 60 - 50 175 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Temperature (°C) Drain Source Breakdown vs. Junction Temperature Threshold Voltage S11-2065-Rev. B, 24-Oct-11 72 4 Document Number: 68901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD50N06-09L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited I D - Drain Current (A) 100 100 µs Limited by RDS(on)* ID Limited 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 TC = 25 °C Single Pulse 0.01 0.01 * VGS BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S11-2065-Rev. B, 24-Oct-11 5 Document Number: 68901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD50N06-09L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68901. S11-2065-Rev. B, 24-Oct-11 6 Document Number: 68901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T13-0592-Rev. A, 02-Sep-13 DWG: 6019 Note • Dimension L3 is for reference only. Revision: 02-Sep-13 Document Number: 64424 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000