SQD50P03-07
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Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
- 30
RDS(on) () at VGS = - 10 V
0.007
RDS(on) () at VGS = - 4.5 V
0.011
ID (A)
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
- 50
Configuration
Single
S
TO-252
G
Drain Connected to Tab
G
D
S
D
Top View
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-252
Lead (Pb)-free and Halogen-free
SQD50P03-07-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Currenta
Continuous Source Current (Diode
TC = 125 °C
Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
- 50
- 50
IS
- 50
IDM
- 200
IAS
- 50
EAS
125
PD
UNIT
136
45
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mountc
RthJA
50
RthJC
1.1
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S12-1848-Rev. B, 30-Jul-12
Document Number: 67014
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SQD50P03-07
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS = 0, ID = - 250 μA
- 30
-
-
VDS = VGS, ID = - 250 μA
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS = ± 20 V
-
-
± 100
-
-
-1
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductanceb
VDS
VGS(th)
RDS(on)
gfs
VGS = 0 V
VDS = - 30 V
VGS = 0 V
VDS = - 30 V, TJ = 125 °C
-
-
- 50
VGS = 0 V
VDS = - 30 V, TJ = 175 °C
-
-
- 250
VGS = - 10 V
VDS- 5 V
- 50
-
-
VGS = - 10 V
ID = - 20 A
-
0.005
0.007
VGS = - 10 V
ID = - 20 A, TJ = 125 °C
-
-
0.011
VGS = - 10 V
ID = - 20 A, TJ = 175 °C
-
-
0.012
VGS = - 4.5 V
ID = - 15 A
VDS = - 15 V, ID = - 20 A
-
0.008
0.011
-
52
-
-
4390
5490
V
nA
μA
A
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
-
766
960
Reverse Transfer Capacitance
Crss
-
672
840
Total Gate Chargec
Qg
-
97
146
-
7.6
-
-
29.1
-
1.40
2.85
4.50
-
11
17
-
12
18
-
63
95
-
28
42
-
-
- 200
A
-
- 0.85
- 1.5
V
Gate-Source
Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay
Qgs
Fall Timec
Source-Drain Diode Ratings and
VGS = - 10 V
VDS = - 25 V, f = 1 MHz
VDS = - 15 V, ID = - 75 A
Qgd
Rg
f = 1 MHz
td(on)
tr
Timec
VGS = 0 V
td(off)
VDD = - 15 V, RL = 0.2
ID - 75 A, VGEN = - 10 V, Rg = 1
tf
pF
nC
ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 30 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1848-Rev. B, 30-Jul-12
Document Number: 67014
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50P03-07
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
160
120
VGS = 10 V thru 5 V
100
VGS = 4 V
ID - Drain Current (A)
ID - Drain Current (A)
120
80
80
60
TC = 25 °C
40
40
VGS = 3 V
20
0
TC = 125 °C
TC = - 55 °C
0
0
3
6
9
12
VDS - Drain-to-Source Voltage (V)
15
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
100
TC = - 55 °C
TC = 25 °C
1.2
80
gfs - Transconductance (S)
ID - Drain Current (A)
5
0.9
TC = 25 °C
0.6
0.3
TC = 125 °C
TC = 125 °C
60
40
20
TC = - 55 °C
0
0.0
0
1
2
3
4
0
5
16
32
48
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Transconductance
0.030
64
80
8000
7000
6000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.024
0.018
VGS = 4.5 V
0.012
4000
3000
2000
VGS = 10 V
0.006
Ciss
5000
Coss
Crss
1000
0.000
0
0
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
S12-1848-Rev. B, 30-Jul-12
120
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
30
Capacitance
Document Number: 67014
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50P03-07
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 75 A
VDS = 15 V
8
6
4
2
ID = 45 A
VGS = 10 V
1.7
1.4
1.1
0.8
0.5
0
0
20
40
60
80
Qg - Total Gate Charge (nC)
- 50 - 25
100
150
175
On-Resistance vs. Junction Temperature
Gate Charge
100
0.05
10
0.04
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0
25
50
75 100 125
TJ - Junction Temperature (°C)
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.03
0.02
TJ = 150 °C
0.01
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
10
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
1.2
- 30
VDS - Drain-to-Source Voltage (V)
0.9
VGS(th) Variance (V)
2
4
6
8
VGS - Gate-to-Source Voltage (V)
ID = 250 μA
0.6
0.3
ID = 5 mA
0.0
- 0.3
- 0.6
- 50 - 25
0
- 32
ID = 10 mA
- 34
- 36
- 38
- 40
- 50 - 25
TJ - Temperature (°C)
0
25
50
75 100 125
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
25
S12-1848-Rev. B, 30-Jul-12
50
75
100
125
150
175
150
175
Document Number: 67014
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50P03-07
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
ID Limited
100 μs, 1 ms
10 ms
100 ms
1 s, 10 s, DC
10
1
0.1
0.01
0.01
Limited by RDS(on)*
TC = 25 °C
Single Pulse
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-1848-Rev. B, 30-Jul-12
Document Number: 67014
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50P03-07
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67014.
S12-1848-Rev. B, 30-Jul-12
Document Number: 67014
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
Note
• Dimension L3 is for reference only.
Revision: 02-Sep-13
Document Number: 64424
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2023
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Document Number: 91000
