SQD50P08-28
Vishay Siliconix
Automotive P-Channel 80 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
- 80
RDS(on) () at VGS = - 10 V
0.028
ID (A)
• TrenchFET® Power MOSFET
- 48
Configuration
• AEC-Q101 Qualifiedd
Single
• 100 % Rg and UIS Tested
S
TO-252
• Compliant to RoHS Directive 2002/95/EC
G
Drain Connected to Tab
G
D
S
D
Top View
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-252
Lead (Pb)-free and Halogen-free
SQD50P08-28-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VDS
LIMIT
Drain-Source Voltage
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain
Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
- 80
V
- 48
- 28
IS
- 50
IDM
- 190
IAS
- 45
EAS
100
PD
UNIT
136
45
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
50
RthJC
1.1
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
Document Number: 63215
S11-1871-Rev. A, 10-Oct-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50P08-28
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
VDS
VGS = 0, ID = - 250 μA
- 80
-
-
VGS(th)
VDS = VGS, ID = - 250 μA
- 2.5
- 3.0
- 3.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
VGS = 0 V
VDS = - 80 V
-
-
-1
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = - 80 V, TJ = 125 °C
-
-
- 50
VGS = 0 V
VDS = - 80 V, TJ = 175 °C
-
-
- 250
On-State Drain Currenta
ID(on)
VGS = - 10 V
VDS- 5 V
- 50
-
-
VGS = - 10 V
ID = - 12.5 A
-
0.023
0.028
VGS = - 10 V
ID = - 12.5 A, TJ = 125 °C
-
-
0.049
VGS = - 10 V
ID = - 12.5 A, TJ = 175 °C
-
-
0.061
-
32
-
-
4826
6035
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
gfs
VDS = - 15 V, ID = - 12.5 A
V
nA
μA
A
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
Rg
VGS = 0 V
VGS = - 10 V
VDS = - 25 V, f = 1 MHz
VDS = - 40 V, ID = - 12.5 A
f = 1 MHz
td(on)
tr
td(off)
VDD = - 40 V, RL = 3.8
ID - 10.5 A, VGEN = - 10 V, Rg = 1
tf
-
343
430
-
224
280
pF
-
95
145
-
19
-
-
26
-
1.73
3.47
5.21
-
15
23
-
11
17
-
65
98
-
16
24
-
-
- 190
A
-
- 0.82
- 1.5
V
nC
ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 10 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 63215
S11-1871-Rev. A, 10-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50P08-28
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
45
35
VGS = 10 V thru 6 V
28
ID - Drain Current (A)
ID - Drain Current (A)
36
VGS = 5 V
27
18
9
21
TC = 25 °C
14
7
TC = 125 °C
VGS = 4 V
0
TC = - 55 °C
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
10
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
Transfer Characteristics
Output Characteristics
1.0
50
TC = - 55 °C
40
gfs - Transconductance (S)
ID - Drain Current (A)
0.8
0.6
TC = 25 °C
0.4
0.2
TC = 25 °C
30
TC = 125 °C
20
10
TC = 125 °C
TC = - 55 °C
0
0.0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
0
10
4
0.05
7000
0.04
5600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
16
20
16
32
48
64
VDS - Drain-to-Source Voltage (V)
80
Transconductance
Transfer Characteristics
0.03
VGS = 10 V
0.02
8
12
ID - Drain Current (A)
Ciss
4200
2800
0.01
1400
0.00
0
Coss
0
8
16
24
ID - Drain Current (A)
32
On-Resistance vs. Drain Current
Document Number: 63215
S11-1871-Rev. A, 10-Oct-11
40
Crss
0
Capacitance
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50P08-28
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5
10
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 12.5 A
8
VDS = 40 V
6
4
2
20
40
60
80
100
1.5
1.0
0
25
50
75
100
125
150
175
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.20
10
RDS(on) - On-Resistance (Ω)
0.16
TJ = 150 °C
IS - Source Current (A)
VGS = 10 V
0.5
- 50 - 25
0
0
ID = 12.5 A
2.0
1
0.1
TJ = 25 °C
0.01
0.12
0.08
TJ = 150 °C
0.04
TJ = 25 °C
0.001
0.00
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
8
10
VDS - Drain-to-Source Voltage (V)
- 80
1.1
VGS(th) Variance (V)
6
On-Resistance vs. Gate-to-Source Voltage
1.5
ID = 250 μA
0.7
ID = 5 mA
0.3
- 0.1
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
www.vishay.com
4
4
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
- 0.5
- 50 - 25
2
125
150
175
- 85
ID = 1 mA
- 90
- 95
- 100
- 105
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 63215
S11-1871-Rev. A, 10-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50P08-28
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
100 μs
ID - Drain Current (A)
100
Limited by RDS(on)*
1 ms
10
10 ms
100 ms
1 s, 10 s, DC
1
0.1
0.01
0.01
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 63215
S11-1871-Rev. A, 10-Oct-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50P08-28
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Single Pulse
0.02
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63215.
www.vishay.com
6
Document Number: 63215
S11-1871-Rev. A, 10-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
Note
• Dimension L3 is for reference only.
Revision: 02-Sep-13
Document Number: 64424
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
www.vishay.com
3
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000