SQJ136ELP
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Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L
• TrenchFET® Gen IV power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
6.
15
m
m
1
4
G
m
0m
4.9
Top View
3
S
2
S
1
S
• Material categorization: for definitions of
compliance
please
see
www.vishay.com/doc?99912
D
Bottom View
G
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () at VGS = 10 V
0.00112
RDS(on) () at VGS = 4.5 V
0.00161
ID (A)
S
350
Configuration
Package
N-Channel MOSFET
Single
PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
40
Gate-source voltage
VGS
± 20
TC = 25 °C
Continuous drain current
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current
L = 0.1 mH
Single pulse avalanche energy
TC = 25 °C
Maximum power dissipation a
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
ID
261
324
IDM
600
IAS
42
PD
TJ, Tstg
c
V
350
IS
EAS
UNIT
84
500
166
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount b
SYMBOL
LIMIT
RthJA
68
RthJC
0.3
UNIT
°C/W
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
S20-0772-Rev. A, 12-Oct-2020
Document Number: 77510
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ136ELP
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
VDS
VGS = 0, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.2
1.7
2.2
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS 5 V
30
-
-
VGS = 10 V
ID = 15 A
-
0.0009
0.00112
VGS = 10 V
ID = 15 A, TJ = 125 °C
-
-
0.00200
VGS = 10 V
ID = 15 A, TJ = 175 °C
-
-
0.00244
VGS = 4.5 V
ID = 15 A
-
0.00124
0.00161
-
30
-
-
5725
8015
-
1790
2505
-
183
256
-
107
150
-
17.5
-
-
19
-
0.67
1.48
2.40
-
13
19
-
16
23
-
50
71
-
14
20
gfs
VDS = 15 V, ID = 10 A
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay
time c
Rise time c
Turn-off delay time c
Fall time c
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 20 V, ID = 40 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 20 V, RL = 0.5
ID 40 A, VGEN = 10 V, Rg = 1
tf
pF
nC
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = 15 A, VGS = 0 V
-
-
600
-
-
1.1
V
-
57
80
ns
-
62
86
nC
-
26
37
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
31
42
IRM(REC)
-
1.8
2.6
Body diode peak reverse recovery
current
IF = 40 A, di/dt = 100 A/μs
A
ns
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S20-0772-Rev. A, 12-Oct-2020
Document Number: 77510
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ136ELP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
400
10000
10000
1st line
2nd line
1000
200
100
100
1000
150
1st line
2nd line
2nd line
ID - Drain Current (A)
VGS = 10 V thru 5 V
2nd line
ID - Drain Current (A)
200
300
TC = 25 °C
100
100
TC = 125 °C
50
VGS = 4 V thru 3 V
TC = -55 °C
0
0
10
0
1
2
10
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
0.002
10000
250
10000
1000
150
100
100
50
10
0
0
20
40
60
80
VGS = 4.5 V
0.001
VGS = 10 V
100
0
100
10
0
20
40
80
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
Axis Title
1st line
2nd line
Crss
100
100
10
1
10
20
30
40
ID = 20 A,
VDS = 30 V
8
1000
6
1st line
2nd line
1000
2nd line
VGS - Gate-to-Source Voltage (V)
Coss
1000
10000
10
Ciss
10
4
100
2
10
0
0
25
50
75
100
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S20-0772-Rev. A, 12-Oct-2020
100
Axis Title
10000
10 000
2nd line
C - Capacitance (pF)
60
ID - Drain Current (A)
100 000
0
1000
1st line
2nd line
TC = 125 °C
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = 25 °C
200
2nd line
RDS(on) - On-Resistance (Ω)
TC = - 55 °C
125
Document Number: 77510
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
1000
1.4
VGS = 4.5 V
1.1
100
0.8
10
0.5
-50 -25
0
25
50
ID = 1 mA
52
1000
50
1st line
2nd line
VGS = 10 V
2nd line
VDS - Drain-to-Source Voltage (V)
ID = 15 A
1.7
10000
54
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
48
100
46
10
44
-50 -25
75 100 125 150 175
0
25
75 100 125 150 175
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Drain Source Breakdown vs. Junction Temperature
Axis Title
Axis Title
10000
TJ = 150 °C
1st line
2nd line
1000
1
TJ = 25 °C
100
0.1
2nd line
RDS(on) - On-Resistance (Ω)
10
10000
0.010
0.008
1000
0.006
1st line
2nd line
100
2nd line
IS - Source Current (A)
50
0.004
100
TJ = 150 °C
0.002
TJ = 25 °C
0
0.2
0.4
0.6
0.8
10
0.000
10
0.01
1.0
0
2
4
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to Source Voltage
Axis Title
Axis Title
10000
0.5
1000
IDM limited
10000
IDM limited
1st line
2nd line
1000
-0.7
100
ID = 250 μA
100
1000
10
Limited by RDS(on) a
100 μs
1 ms 100
10 ms
1
1st line
2nd line
ID = 5 mA
-0.3
2nd line
ID - Drain Current (A)
0.1
2nd line
VGS(th) - Variance (V)
6
-1.1
TC = 25 °C,
single pulse
10
-1.5
-50 -25
0
25
50
75 100 125 150 175
0.1
0.01
BVDSS limited
10 ms
1 s, 10 s, DC
10
0.1
1
10
TJ - Junction Temperature (°C)
VDS - Drain-to-Source Voltage (V)
Threshold Voltage
Safe Operating Area
100
Note
a. VGS > minimum VGS at which RDS(on) is specified
S20-0772-Rev. A, 12-Oct-2020
Document Number: 77510
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ136ELP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
10000
Duty cycle = 0.5
0.2
0.1
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.01
0.1
100
0.05
0.02
0.001
Single pulse
0.0001
0.0001
10
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty cycle = 0.5
0.2
1000
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.1
0.05
0.01
Single pulse
0.001
0.0001
100
0.02
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see ww.vishay.com/ppg?77510.
S20-0772-Rev. A, 12-Oct-2020
Document Number: 77510
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 3
b2
D6
D5
E1
E3
E2
E
E4
E5
W4
W1
D5
z2
A2
A1
L
0.2 Gauge line
L1
ɵ
c
b
b1
e
z1
D1
D2
Backside view (single)
A
Topside view
DIM.
MIN.
A
1.00
A1
0.00
A2
0.40
b
0.33
b1
0.43
b2
4.00
c
0.15
D1
4.80
D2
3.86
D5
0.51
D6
2.64
e
E
6.05
E1
4.27
E2
3.18
E3
3.48
E4
2.72
E5
0.71
L
0.62
L1
0.92
W1
0.31
W4
0.31
z1
0.37
z2
0.99
0°
ECN: S19-0643-Rev. B, 05-Aug-2019
DWG: 6067
Note
• Millimeter will govern
Revison: 05-Aug-2019
MILLIMETERS
NOM.
1.05
--0.45
0.41
0.51
4.10
0.20
4.90
3.96
0.61
2.74
1.27 BSC
6.15
4.37
3.28
3.58
2.82
0.81
0.72
1.07
0.41
0.36
0.47
1.09
---
INCHES
MAX.
1.10
0.127
0.50
0.49
0.59
4.20
0.25
5.00
4.06
0.71
2.84
MIN.
0.039
0.000
0.016
0.013
0.017
0.157
0.006
0.189
0.152
0.020
0.104
6.25
4.47
3.38
3.68
2.92
0.91
0.82
1.22
0.51
0.41
0.57
1.19
5°
0.238
0.168
0.125
0.137
0.107
0.028
0.024
0.036
0.012
0.012
0.015
0.039
0°
NOM.
0.041
--0.018
0.016
0.020
0.161
0.008
0.193
0.156
0.024
0.108
0.050 BSC
0.242
0.172
0.129
0.141
0.111
0.032
0.028
0.042
0.016
0.014
0.019
0.043
---
MAX.
0.043
0.005
0.020
0.019
0.023
0.165
0.010
0.197
0.160
0.028
0.112
0.246
0.176
0.133
0.145
0.115
0.036
0.032
0.048
0.020
0.016
0.022
0.047
5°
Document Number: 76666
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
0.3
(0.012)
3.48
(0.137)
6.73
(0.265)
2.82
(0.111)
0.76
(0.030)
4
(R x R
0. 0
00 .2
8)
5.3
(0.209)
2.7
(0.106)
0.71
(0.028)
Recommended Land Pattern PowerPAK® SO-8L Single Short Ear
16
(R x
0. R0
00 .1
4)
1.1
(0.043)
3.96
(0.156)
1.27
(0.050)
0.68
(0.027)
Dimensions in Millimeters (Inches)
Revision: 24-Aug-2021
Document Number: 78020
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
1
Document Number: 91000
