SQJ147ELP
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Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
6.
15
m
m
1
4
G
m
0m
4.9
Top View
2
S
3
S
1
S
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
Bottom View
G
PRODUCT SUMMARY
VDS (V)
-40
RDS(on) () at VGS = -10 V
0.0125
RDS(on) () at VGS = -4.5 V
0.018
ID (A)
Configuration
Package
-90
D
Single
P-Channel MOSFET
PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-40
Gate-source voltage a
VGS
± 20
Continuous drain current
TC = 25 °C b
TC = 125 °C
Continuous source current (diode conduction) b
Pulsed drain current c
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation c
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
-90
IS
-90
-200
IAS
-41
PD
TJ, Tstg
Soldering recommendations (peak temperature) d, e
V
-52
IDM
EAS
UNIT
45
183
61
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount f
SYMBOL
LIMIT
RthJA
46
RthJC
0.82
UNIT
°C/W
Notes
a. Not intended for continuous use with positive gate voltage > 5.0 V
b. Package limited
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). For PowerPAK SO-8L, the end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Pulse test; pulse width 300 μs, duty cycle 2 %
S20-0651-Rev. A, 24-Aug-2020
Document Number: 77857
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0, ID = -250 μA
-40
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-2.0
-2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = -40 V
-
-
-1
-
-
-50
-150
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = -40 V, TJ = 125 °C
VGS = 0 V
VDS = -40 V, TJ = 175 °C
-
-
On-state drain current a
ID(on)
VGS = -10 V
VDS -5 V
-30
-
-
VGS = -10 V
ID = -10 A
-
0.01
0.0125
Drain-source on-state resistance a
Forward transconductance b
RDS(on)
gfs
VGS = -10 V
ID = -10 A, TJ = 125 °C
-
-
0.019
VGS = -10 V
ID = -10 A, TJ = 175 °C
-
-
0.023
VGS = -4.5 V
ID = -8 A
-
0.0144
0.018
-
45
-
-
4225
5500
-
305
400
-
281
365
-
85
120
-
14.5
-
-
14.8
-
1.7
3.9
6.2
-
12
18
VDS = -15 V, ID = -10 A
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
Rg
VGS = 0 V
VGS = -10 V
VDS = -25 V, f = 1 MHz
VDS = -20 V, ID = -10 A
f = 1 MHz
td(on)
tr
td(off)
VDD = -20 V, RL = 2 ,
ID -10 A, VGEN = -10 V, Rg = 1
tf
-
4
6
-
66
99
-
16
24
pF
nC
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
IF = -10 A, VGS = 0 V
IF = -10 A, di/dt = 100 A/μs
-
-
-200
-
-0.76
-1.2
V
-
20
40
ns
-
14
28
nC
Reverse recovery fall time
ta
-
11
-
Reverse recovery rise time
tb
-
8
-
IRM(REC)
-
-1.3
-
Body diode peak reverse recovery
current
A
ns
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S20-0651-Rev. A, 24-Aug-2020
Document Number: 77857
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ147ELP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
200
10000
175
10000
VGS = 10 V thru 7 V
140
1000
80
1st line
2nd line
VGS = 5 V
120
VGS = 4 V
100
70
100
35
40
TC = 125 °C
VGS = 3 V
TC = -55 °C
0
2
4
6
8
10
0
10
0
1000
TC = 25 °C
105
1st line
2nd line
VGS = 6 V
2nd line
ID - Drain Current (A)
2nd line
ID - Drain Current (A)
160
10
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
Axis Title
10000
0.040
100
80
TC = 125 °C
60
TC = 25 °C
40
0.032
1000
0.024
VGS = 4.5 V
0.016
100
0.008
20
VGS = 10 V
0
0
0
16
32
48
64
80
10
0
20
40
80
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
10
1st line
2nd line
1000
1000
Coss
Crss
100
100
10
1
10
10
20
30
40
10000
ID = 10 A
VDS = 20 V
8
1000
6
1st line
2nd line
Ciss
2nd line
VGS - Gate-to-Source Voltage (V)
10000
10 000
4
100
2
0
10
0
18
36
54
72
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S20-0651-Rev. A, 24-Aug-2020
100
Axis Title
Axis Title
0
60
ID - Drain Current (A)
100 000
2nd line
C - Capacitance (pF)
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
2nd line
gfs - Transconductance (S)
TC = -55 °C
90
Document Number: 77857
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
10000
100
ID = 15 A
1.4
VGS = 4.5 V
1.2
100
0.9
0.6
0
25
50
1000
1
TJ = 25 °C
0,1
10
0
75 100 125 150 175
0.3
0.6
0.9
1.2
1.5
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
10000
0.075
10000
0.5
0.2
0.030
TJ = 150 °C
100
1000
-0.1
ID = 5 mA
-0.4
100
-0.7
0.015
1st line
2nd line
1000
0.045
2nd line
VGS(th) - Variance (V)
0.060
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
100
0.01
10
-50 -25
TJ = 150 °C
10
1st line
2nd line
1000
2nd line
IS - Source Current (A)
VGS = 10 V
1.7
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
ID = 250 μA
TJ = 25 °C
0
-1.0
10
0
2
4
6
8
10
-50 -25
0
25
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
10000
10
Axis Title
55
1000
10000
ID = 1 mA
49
46
100
43
100
IDM limited
10
100 μs
Limited by RDS(on) a
10
-50 -25
0
25
50
75 100 125 150 175
100
1
TC = 25 °C,
single pulse
40
1000
0.1
0.01
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
52
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
50
BVDSS limited
1 ms
10 ms
100 ms, 1 s,
10 s, DC
10
0.1
1
10
TJ - Junction Temperature (°C)
VDS - Drain-to-Source Voltage (V)
Drain-Source Breakdown vs. Junction Temperature
Safe Operating Area
100
Note
a. VGS > minimum VGS at which RDS(on) is specified
S20-0651-Rev. A, 24-Aug-2020
Document Number: 77857
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ147ELP
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Vishay Siliconix
THERMAL RATINGS (TC = 25 °C, unless otherwise noted)
10000
1
Duty cycle = 0.5
0.2
Notes:
0.1
0.1
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Axis Title
P DM
0.05
0.02
t1
t2
1. Duty cycle, D =
t1
t2
2. Per unit base = R thJA = 68 °C/W
0.01
100
3. T JM - TA = PDMZthJA(t)
Single pulse
4. Surface mounted
0.001
0.0001
10
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
Duty cycle = 0.5
1000
0.2
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
0.1
0.1
0.05
100
0.02
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77857.
S20-0651-Rev. A, 24-Aug-2020
Document Number: 77857
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 3
b2
D6
D5
E1
E3
E2
E
E4
E5
W4
W1
D5
z2
A2
A1
L
0.2 Gauge line
L1
ɵ
c
b
b1
e
z1
D1
D2
Backside view (single)
A
Topside view
DIM.
MIN.
A
1.00
A1
0.00
A2
0.40
b
0.33
b1
0.43
b2
4.00
c
0.15
D1
4.80
D2
3.86
D5
0.51
D6
2.64
e
E
6.05
E1
4.27
E2
3.18
E3
3.48
E4
2.72
E5
0.71
L
0.62
L1
0.92
W1
0.31
W4
0.31
z1
0.37
z2
0.99
0°
ECN: S19-0643-Rev. B, 05-Aug-2019
DWG: 6067
Note
• Millimeter will govern
Revison: 05-Aug-2019
MILLIMETERS
NOM.
1.05
--0.45
0.41
0.51
4.10
0.20
4.90
3.96
0.61
2.74
1.27 BSC
6.15
4.37
3.28
3.58
2.82
0.81
0.72
1.07
0.41
0.36
0.47
1.09
---
INCHES
MAX.
1.10
0.127
0.50
0.49
0.59
4.20
0.25
5.00
4.06
0.71
2.84
MIN.
0.039
0.000
0.016
0.013
0.017
0.157
0.006
0.189
0.152
0.020
0.104
6.25
4.47
3.38
3.68
2.92
0.91
0.82
1.22
0.51
0.41
0.57
1.19
5°
0.238
0.168
0.125
0.137
0.107
0.028
0.024
0.036
0.012
0.012
0.015
0.039
0°
NOM.
0.041
--0.018
0.016
0.020
0.161
0.008
0.193
0.156
0.024
0.108
0.050 BSC
0.242
0.172
0.129
0.141
0.111
0.032
0.028
0.042
0.016
0.014
0.019
0.043
---
MAX.
0.043
0.005
0.020
0.019
0.023
0.165
0.010
0.197
0.160
0.028
0.112
0.246
0.176
0.133
0.145
0.115
0.036
0.032
0.048
0.020
0.016
0.022
0.047
5°
Document Number: 76666
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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PAD Pattern
www.vishay.com
Vishay Siliconix
0.3
(0.012)
3.48
(0.137)
6.73
(0.265)
2.82
(0.111)
0.76
(0.030)
4
(R x R
0. 0
00 .2
8)
5.3
(0.209)
2.7
(0.106)
0.71
(0.028)
Recommended Land Pattern PowerPAK® SO-8L Single Short Ear
16
(R x
0. R0
00 .1
4)
1.1
(0.043)
3.96
(0.156)
1.27
(0.050)
0.68
(0.027)
Dimensions in Millimeters (Inches)
Revision: 24-Aug-2021
Document Number: 78020
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 09-Jul-2021
1
Document Number: 91000
