SQJ152EP-T1_GE3

SQJ152EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L • TrenchFET® Gen IV power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D 6. 15 m m 1 4 G m 0m 4.9 Top View 3 S 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View G PRODUCT SUMMARY VDS (V) 40 RDS(on) () at VGS = 10 V 0.0051 S 114 N-Channel MOSFET ID (A) Configuration Package Single PowerPAK SO-8L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C TC = 125 °C Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 66 IS 123 189 IAS 18.5 EAS 17.1 TJ, Tstg Soldering recommendations (peak temperature) c V 114 IDM PD UNIT 136 45 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount b SYMBOL LIMIT RthJA 42 RthJC 1.1 UNIT °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. When mounted on 1" square PCB (FR4 material) c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S20-0723-Rev. A, 21-Sep-2020 Document Number: 77129 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ152EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 250 VGS = 10 V VDS  5 V 30 - - VGS = 10 V ID = 15 A - 0.004 0.0051 VGS = 10 V ID = 15 A, TJ = 125 °C - - 0.0084 VGS = 10 V ID = 15 A, TJ = 175 °C - - 0.0103 - 45 - VDS = 15 V, ID = 10 A V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 15 A f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 1.33  ID  15 A, VGEN = 10 V, Rg = 1  tf - 1037 1452 - 401 562 - 51 72 - 18 27 - 6 - - 4 - 3.4 6.8 10.2 - 11 17 - 4 8 - 18 27 - 6 9 pF nC  ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr IF = 15 A, VGS = 0 V IF = 6 A, di/dt = 100 A/μs - - 168 - - 1.1 V - 24 48 ns - 12 24 nC Reverse recovery fall time ta - 11 - Reverse recovery rise time tb - 13 - IRM(REC) - 0.9 - Body diode peak reverse recovery current A ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0723-Rev. A, 21-Sep-2020 Document Number: 77129 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ152EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 200 150 10000 10000 VGS = 10 V thru 8 V VGS = 6 V 80 100 VGS = 5 V 40 1000 90 TC = 25 °C 60 100 TC = -55 °C 30 TC = 125 °C VGS = 4 V 0 0 10 0 2 4 6 8 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) 120 VGS = 7 V 1st line 2nd line 2nd line ID - Drain Current (A) 160 10 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 0.020 10 85 10000 1000 0.012 0.008 100 VGS = 10 V 0.004 0.000 68 2nd line gfs - Transconductance (S) 0.016 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) TC = -55 °C 20 40 60 80 TC = 125 °C 51 34 17 0 10 0 TC = 25 °C 0 100 14 ID - Drain Current (A) Crss 100 10 10 24 32 40 10000 ID = 15 A VDS = 20 V 8 1000 6 1st line 2nd line 1000 Coss 2nd line VGS - Gate-to-Source Voltage (V) 1000 1st line 2nd line 2nd line C - Capacitance (pF) Ciss 16 4 100 2 0 10 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S20-0723-Rev. A, 21-Sep-2020 70 10 10000 8 56 Axis Title Axis Title 10 000 0 42 Transconductance On-Resistance vs. Drain Current 100 28 ID - Drain Current (A) 25 Document Number: 77129 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ152EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 0.035 10000 10000 1000 1.4 1.1 100 0.8 0.028 1000 0.021 1st line 2nd line 1.7 2nd line RDS(on) - On-Resistance (Ω) VGS = 10 V ID = 6 A 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 0.014 TJ = 150 °C 100 0.007 TJ = 25 °C 0.5 0 10 -50 -25 0 25 50 75 100 125 150 175 10 0 2 4 6 8 10 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to Source Voltage Axis Title Axis Title 60 0.60 10000 10000 0.20 54 100 52 1000 -0.20 1st line 2nd line 1000 56 2nd line VGS(th) - Variance (V) 58 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) ID = 1 mA ID = 5 mA -0.60 100 ID = 250 μA -1.00 50 -1.40 10 -50 -25 0 25 50 75 100 125 150 175 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Threshold Voltage Axis Title Axis Title 100 1000 10000 10000 IDM limited 1 100 TJ = 25 °C 0.1 1000 10 100 μs 1 Limited by RDS(on) a 0.1 0.01 10 0 0.3 0.6 0.9 1.2 1.5 ID limited 0.01 0.01 BVDSS limited TC = 25 °C, single pulse 1st line 2nd line 1000 2nd line ID - Drain Current (A) 100 1st line 2nd line 2nd line IS - Source Current (A) TJ = 150 °C 10 1 ms 10 ms100 100 ms, 1 s, 10 s, DC 10 0.1 1 10 VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V) Source Drain Diode Forward Voltage Safe Operating Area 100 Note a. VGS > minimum VGS at which RDS(on) is specified S20-0723-Rev. A, 21-Sep-2020 Document Number: 77129 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ152EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 68 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77129. S20-0723-Rev. A, 21-Sep-2020 Document Number: 77129 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 3 b2 D6 D5 E1 E3 E2 E E4 E5 W4 W1 D5 z2 A2 A1 L 0.2 Gauge line L1 ɵ c b b1 e z1 D1 D2 Backside view (single) A Topside view DIM. MIN. A 1.00 A1 0.00 A2 0.40 b 0.33 b1 0.43 b2 4.00 c 0.15 D1 4.80 D2 3.86 D5 0.51 D6 2.64 e E 6.05 E1 4.27 E2 3.18 E3 3.48 E4 2.72 E5 0.71 L 0.62 L1 0.92 W1 0.31 W4 0.31 z1 0.37 z2 0.99  0° ECN: S19-0643-Rev. B, 05-Aug-2019 DWG: 6067 Note • Millimeter will govern Revison: 05-Aug-2019 MILLIMETERS NOM. 1.05 --0.45 0.41 0.51 4.10 0.20 4.90 3.96 0.61 2.74 1.27 BSC 6.15 4.37 3.28 3.58 2.82 0.81 0.72 1.07 0.41 0.36 0.47 1.09 --- INCHES MAX. 1.10 0.127 0.50 0.49 0.59 4.20 0.25 5.00 4.06 0.71 2.84 MIN. 0.039 0.000 0.016 0.013 0.017 0.157 0.006 0.189 0.152 0.020 0.104 6.25 4.47 3.38 3.68 2.92 0.91 0.82 1.22 0.51 0.41 0.57 1.19 5° 0.238 0.168 0.125 0.137 0.107 0.028 0.024 0.036 0.012 0.012 0.015 0.039 0° NOM. 0.041 --0.018 0.016 0.020 0.161 0.008 0.193 0.156 0.024 0.108 0.050 BSC 0.242 0.172 0.129 0.141 0.111 0.032 0.028 0.042 0.016 0.014 0.019 0.043 --- MAX. 0.043 0.005 0.020 0.019 0.023 0.165 0.010 0.197 0.160 0.028 0.112 0.246 0.176 0.133 0.145 0.115 0.036 0.032 0.048 0.020 0.016 0.022 0.047 5° Document Number: 76666 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix 0.3 (0.012) 3.48 (0.137) 6.73 (0.265) 2.82 (0.111) 0.76 (0.030) 4 (R x R 0. 0 00 .2 8) 5.3 (0.209) 2.7 (0.106) 0.71 (0.028) Recommended Land Pattern PowerPAK® SO-8L Single Short Ear 16 (R x 0. R0 00 .1 4) 1.1 (0.043) 3.96 (0.156) 1.27 (0.050) 0.68 (0.027) Dimensions in Millimeters (Inches) Revision: 24-Aug-2021 Document Number: 78020 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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