SQJ154EP
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Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L
• TrenchFET® Gen IV power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
6.
15
m
m
1
4
G
m
0m
4.9
Top View
3
S
2
S
1
S
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Bottom View
PRODUCT SUMMARY
G
VDS (V)
40
RDS(on) (Ω) at VGS = 10 V
0.0025
ID (A)
Configuration
Package
N-Channel MOSFET
243
S
Single
PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
40
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation a
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
243
IS
194
970
IAS
33
PD
TJ, Tstg
Soldering recommendations (peak temperature) c
V
140
IDM
EAS
UNIT
54
214
71
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount b
SYMBOL
LIMIT
RthJA
68
RthJC
0.7
UNIT
°C/W
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
S22-0297-Rev. A,04-Apr-2022
Document Number: 77466
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For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SQJ154EP
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
VDS
VGS = 0, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3.0
3.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS ≥ 5 V
30
-
-
VGS = 10 V
ID = 15 A
-
0.0022
0.0025
VGS = 10 V
ID = 15 A, TJ = 125 °C
-
-
0.0032
VGS = 10 V
ID = 15 A, TJ = 175 °C
-
-
0.0045
-
48
-
VDS = 15 V, ID = 10 A
V
nA
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
Rg
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 40 V, ID = 50 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
-
2585
3620
-
830
1162
-
62
87
-
43
65
-
11
-
-
12
-
-
3.7
5.7
-
13
20
-
3
5
-
22
33
-
5
8
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
IF = 15 A, VGS = 0 V
IF = 10 A, di/dt = 100 A/μs
-
-
970
-
-
1.1
V
-
36
72
ns
-
25
50
nC
Reverse recovery fall time
ta
-
18
-
Reverse recovery rise time
tb
-
19
-
IRM(REC)
-
1.3
-
Body diode peak reverse recovery
current
A
ns
A
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0297-Rev. A,04-Apr-2022
Document Number: 77466
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ154EP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
125
10000
250
TC = -55 °C
VGS = 10 V thru 6 V
1000
150
1st line
2nd line
2nd line
ID - Drain Current (A)
200
VGS = 5 V
100
100
50
2nd line
gfs - Transconductance (S)
TC = 25 °C
100
75
TC = 125 °C
50
25
VGS = 4 V
0
10
0
0
2
4
6
8
0
10
5
10
15
20
25
30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Transconductance
Output Characteristics
Axis Title
Axis Title
10000
10 000
10000
200
Ciss
TC = 25 °C
80
100
Coss
1000
1000
1st line
2nd line
120
2nd line
C - Capacitance (pF)
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
160
100
100
Crss
40
TC = 125 °C
TC = -55 °C
10
0
0
2
4
6
8
10
10
10
0
8
16
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Capacitance
10000
0.002
100
0.001
10
0
30
40
50
60
70
ID = 10 A
VDS = 20 V
8
1000
6
1st line
2nd line
VGS = 10 V
2nd line
VGS - Gate-to-Source Voltage (V)
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
1000
0.003
10000
10
0.004
20
4
100
2
10
0
0
10
20
30
40
ID - Drain Current (A)
Qg - Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
S22-0297-Rev. A,04-Apr-2022
40
Axis Title
Axis Title
10
32
VGS - Gate-to-Source Voltage (V)
0.005
0
24
50
Document Number: 77466
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
100
10000
ID = 1 mA
1000
1st line
2nd line
49
47
100
10
TJ = 150 °C
1000
1st line
2nd line
51
2nd line
IS - Source Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
53
1
100
0.1
TJ = 25 °C
45
10
43
-50
-25
0
25
50
75
10
0.01
0
100 125 150 175
0.2
0.4
0.8
1.0
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
100
0.8
0.020
1000
0.015
1st line
2nd line
1st line
2nd line
1.0
2nd line
RDS(on) - On-Resistance (Ω)
1000
1.2
10000
0.025
VGS = 10 V
ID = 10 A
1.4
1.2
Axis Title
10000
1.6
2nd line
RDS(on) - On-Resistance (Normalized)
0.6
0.010
100
TJ = 150 °C
0.005
TJ = 25 °C
10
0.6
-50
-25
0
25
50
75
10
0
100 125 150 175
0
2
4
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to Source Voltage
Axis Title
10000
IDM limited
0.2
10
100 μs100
Limited by RDS(on) a
1
TC = 25 °C,
single pulse
BVDSS limited
1 ms
10 ms
100 ms
1 s, 10 s, DC
10
0,1
1
10
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
100
ID = 5 mA
-0.2
1000
1st line
2nd line
1000
2nd line
VGS(th) - Variance (V)
ID limited
0,1
0,01
10000
0.6
1st line
2nd line
2nd line
ID - Drain Current (A)
100
8
TJ - Junction Temperature (°C)
Axis Title
1000
6
-0.6
100
-1.0
ID = 250 μA
10
-1.4
-50
-25
0
25
50
75
100 125 150 175
TJ - Junction Temperature (°C)
Variance vs. Junction Temperature
Note
a. VGS > minimum VGS at which RDS(on) is specified
S22-0297-Rev. A,04-Apr-2022
Document Number: 77466
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ154EP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty cycle = 0.5
0.2
Notes:
0.1
P DM
0.1
0.05
t1
t2
1. Duty cycle, D =
0.02
t1
t2
2. Per unit base = R thJA = 68 °C/W
3. T JM - TA = PDMZthJA(t)
Single pulse
4. Surface mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77466
S22-0297-Rev. A,04-Apr-2022
Document Number: 77466
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L (PPKSO8LWLA) Case Outline 3
b2
D6
D5
E3
E2
E4
E
E1
E5
W4
W1
D5
z2
Pin 1 marking
A1
b
b1
L
0.2 Gauge line
c
e
L1
ɵ
z1
D2
D1
Backside view (single)
A
Topside view
DIM.
MIN.
A
1.00
A1
0.00
b
0.33
b1
0.43
b2
4.00
c
0.15
D1
4.80
D2
3.86
D5
0.51
D6
2.64
e
E
6.05
E1
4.27
E2
3.18
E3
3.48
E4
2.72
E5
0.71
L
0.62
L1
0.92
W1
0.31
W4
0.31
z1
0.37
z2
0.99
θ
0°
ECN: C23-1016-Rev. D, 18-Sep-2023
DWG: 6067
Note
• Millimeter will govern
MILLIMETERS
NOM.
1.05
--0.41
0.51
4.10
0.20
4.90
3.96
0.61
2.74
1.27 BSC
6.15
4.37
3.28
3.58
2.82
0.81
0.72
1.07
0.41
0.36
0.47
1.09
---
INCHES
MAX.
1.10
0.127
0.49
0.59
4.20
0.25
5.00
4.06
0.71
2.84
MIN.
0.039
0.000
0.013
0.017
0.157
0.006
0.189
0.152
0.020
0.104
6.25
4.47
3.38
3.68
2.92
0.91
0.82
1.22
0.51
0.41
0.57
1.19
5°
0.238
0.168
0.125
0.137
0.107
0.028
0.024
0.036
0.012
0.012
0.015
0.039
0°
NOM.
0.041
--0.016
0.020
0.161
0.008
0.193
0.156
0.024
0.108
0.050 BSC
0.242
0.172
0.129
0.141
0.111
0.032
0.028
0.042
0.016
0.014
0.019
0.043
---
MAX.
0.043
0.005
0.019
0.023
0.165
0.010
0.197
0.160
0.028
0.112
0.246
0.176
0.133
0.145
0.115
0.036
0.032
0.048
0.020
0.016
0.022
0.047
5°
Document Number: 76666
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 18-Sep-2023
PAD Pattern
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Vishay Siliconix
0.3
(0.012)
3.48
(0.137)
6.73
(0.265)
2.82
(0.111)
0.76
(0.030)
4
(R x R
0. 0
00 .2
8)
5.3
(0.209)
2.7
(0.106)
0.71
(0.028)
Recommended Land Pattern PowerPAK® SO-8L Single Short Ear
16
(R x
0. R0
00 .1
4)
1.1
(0.043)
3.96
(0.156)
1.27
(0.050)
0.68
(0.027)
Dimensions in Millimeters (Inches)
Revision: 24-Aug-2021
Document Number: 78020
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
1
Document Number: 91000
