SQJ168ELP
www.vishay.com
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
6.
15
m
m
1
4
G
m
0m
4.9
Top View
3
S
2
S
1
S
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Bottom View
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
0.036
RDS(on) (Ω) at VGS = 4.5 V
0.040
ID (A)
N-Channel MOSFET
24
Configuration
Package
G
60
S
Single
PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
60
Gate-source voltage
VGS
± 20
TC = 25 °C a
Continuous drain current
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
L = 0.1 mH
Single pulse avalanche energy
TC = 25 °C
Maximum power dissipation
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
ID
14
49
IDM
96
IAS
17
EAS
14.4
TJ, Tstg
d
V
24
IS
PD
UNIT
29.4
9.8
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
LIMIT
RthJA
42
RthJC
2.8
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
S21-0456-Rev. A, 17-May-2021
Document Number: 63078
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ168ELP
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
VDS
VGS = 0, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 60 V
-
-
1
VGS = 0 V
VDS = 60 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS ≥ 5 V
30
-
-
VGS = 10 V
ID = 15 A
-
0.029
0.036
VGS = 10 V
ID = 15 A, TJ = 125 °C
-
-
0.075
VGS = 10 V
ID = 15 A, TJ = 175 °C
-
-
0.096
VGS = 4.5 V
ID = 15 A
-
0.032
0.040
-
30
-
-
705
987
-
85
119
-
21
30
VDS = 15 V, ID = 10 A
V
nA
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay
time c
Rise time c
Turn-off delay time c
Fall time c
VGS = 0 V
VDS = 25 V, f = 1 MHz
-
13
20
-
3
-
-
2
-
f = 1 MHz
2.1
4.2
6.3
-
7
11
VDD = 30 V, RL = 3.0 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
-
3
6
-
19
29
-
1
2
VGS = 10 V
VDS = 30 V, ID = 10 A
td(on)
tr
td(off)
tf
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
Body diode reverse recovery time
trr
IF = 15 A, VGS = 0 V
-
-
96
-
-
1.1
V
-
19
38
ns
-
17
34
nC
-
14
-
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
5
-
IRM(REC)
-
1.9
-
Body diode peak reverse recovery
current
IF = 10 A, di/dt = 100 A/μs
A
ns
A
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0456-Rev. A, 17-May-2021
Document Number: 63078
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ168ELP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
70
50
10000
1000
42
1st line
2nd line
2nd line
ID - Drain Current (A)
56
VGS = 4 V
28
100
14
2nd line
gfs - Transconductance (S)
VGS = 10 V thru 5 V
TC = -55 °C
40
TC = 25 °C
30
TC = 125 °C
20
10
VGS = 3 V
0
0
10
0
2
4
6
8
0
10
8
16
24
32
40
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Transconductance
Output Characteristics
Axis Title
Axis Title
70
10000
10000
10000
100
Ciss
1000
Coss
100
14
TC = 125 °C
TC = -55 °C
10
10
2
4
6
10
0
8
12
36
48
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Capacitance
10
1000
1st line
2nd line
0.060
VGS = 4.5 V
100
VGS = 10 V
0.020
0.000
10
8
16
24
32
40
10000
ID = 10 A
VDS = 30 V
8
1000
6
1st line
2nd line
0.080
2nd line
VGS - Gate-to-Source Voltage (V)
10000
0.040
4
100
2
0
10
0
3
6
9
12
ID - Drain Current (A)
Qg - Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
S21-0456-Rev. A, 17-May-2021
60
Axis Title
Axis Title
2nd line
RDS(on) - On-Resistance (Ω)
24
VGS - Gate-to-Source Voltage (V)
0.100
0
100
Crss
0
0
1000
1st line
2nd line
TC = 25 °C
28
2nd line
C - Capacitance (pF)
1000
42
1st line
2nd line
2nd line
ID - Drain Current (A)
56
15
Document Number: 63078
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ168ELP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
0.200
2.4
VGS = 10 V
2.0
1000
VGS = 4.5 V
1.6
1.2
100
0.8
2nd line
RDS(on) - On-Resistance (Ω)
ID = 15 A
10000
0.160
1000
0.120
TJ = 150 °C
0.080
100
TJ = 125 °C
0.040
0.4
TJ = 25 °C
0
0.000
10
-50 -25
0
25
50
75
100 125 150 175
10
0
2
4
6
8
10
TJ - Junction Temperature (°C)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to Source Voltage
Axis Title
Axis Title
78
0.6
10000
10000
ID = 1 mA
76
0.3
1000
70
68
66
100
64
62
0
1000
ID = 5 mA
1st line
2nd line
72
2nd line
VGS(th) - Variance (V)
74
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
1st line
2nd line
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.8
-0.3
-0.6
100
ID = 250 μA
-0.9
60
58
-1.2
10
-50 -25
0
25
50
75
100 125 150 175
10
-50 -25
0
25
50
75
100 125 150 175
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Threshold Voltage
Axis Title
Axis Title
100
100
10000
10000
1000
1
100
0.1
ID limited
10
1000
100 μs
1 ms
1
Limited by RDS(on)
10
0
0.3
0.6
0.9
1.2
100
a
10 ms
TJ = 25 °C
0.01
1st line
2nd line
TJ = 150 °C
2nd line
ID - Drain Current (A)
10
1st line
2nd line
2nd line
IS - Source Current (A)
IDM limited
0.1
0.01
TC = 25 °C,
single pulse
0.1
BVDSS limited
100 ms
10
1
10
VSD - Source-to-Drain Voltage (V)
VDS - Drain-to-Source Voltage (V)
Source Drain Diode Forward Voltage
Safe Operating Area
1 s,
10 s, DC
100
Note
a. VGS > minimum VGS at which RDS(on) is specified
S21-0456-Rev. A, 17-May-2021
Document Number: 63078
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ168ELP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
10000
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
1000
0.1
0.05
1st line
2nd line
0.1
0.02
Single pulse
100
0.01
0.001
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Axis Title
Duty Cycle = 0.5
0.2
0.1
0.1
1000
0.05
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
1
0.02
0.01
100
0.001
0.0001
0.0001
Single pulse
10
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63078.
S21-0456-Rev. A, 17-May-2021
Document Number: 63078
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L (PPKSO8LWLA) Case Outline 3
b2
D6
D5
E3
E2
E4
E
E1
E5
W4
W1
D5
z2
Pin 1 marking
A1
b
b1
L
0.2 Gauge line
c
e
L1
ɵ
z1
D2
D1
Backside view (single)
A
Topside view
DIM.
MIN.
A
1.00
A1
0.00
b
0.33
b1
0.43
b2
4.00
c
0.15
D1
4.80
D2
3.86
D5
0.51
D6
2.64
e
E
6.05
E1
4.27
E2
3.18
E3
3.48
E4
2.72
E5
0.71
L
0.62
L1
0.92
W1
0.31
W4
0.31
z1
0.37
z2
0.99
θ
0°
ECN: C23-1016-Rev. D, 18-Sep-2023
DWG: 6067
Note
• Millimeter will govern
MILLIMETERS
NOM.
1.05
--0.41
0.51
4.10
0.20
4.90
3.96
0.61
2.74
1.27 BSC
6.15
4.37
3.28
3.58
2.82
0.81
0.72
1.07
0.41
0.36
0.47
1.09
---
INCHES
MAX.
1.10
0.127
0.49
0.59
4.20
0.25
5.00
4.06
0.71
2.84
MIN.
0.039
0.000
0.013
0.017
0.157
0.006
0.189
0.152
0.020
0.104
6.25
4.47
3.38
3.68
2.92
0.91
0.82
1.22
0.51
0.41
0.57
1.19
5°
0.238
0.168
0.125
0.137
0.107
0.028
0.024
0.036
0.012
0.012
0.015
0.039
0°
NOM.
0.041
--0.016
0.020
0.161
0.008
0.193
0.156
0.024
0.108
0.050 BSC
0.242
0.172
0.129
0.141
0.111
0.032
0.028
0.042
0.016
0.014
0.019
0.043
---
MAX.
0.043
0.005
0.019
0.023
0.165
0.010
0.197
0.160
0.028
0.112
0.246
0.176
0.133
0.145
0.115
0.036
0.032
0.048
0.020
0.016
0.022
0.047
5°
Document Number: 76666
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 18-Sep-2023
PAD Pattern
www.vishay.com
Vishay Siliconix
0.3
(0.012)
3.48
(0.137)
6.73
(0.265)
2.82
(0.111)
0.76
(0.030)
4
(R x R
0. 0
00 .2
8)
5.3
(0.209)
2.7
(0.106)
0.71
(0.028)
Recommended Land Pattern PowerPAK® SO-8L Single Short Ear
16
(R x
0. R0
00 .1
4)
1.1
(0.043)
3.96
(0.156)
1.27
(0.050)
0.68
(0.027)
Dimensions in Millimeters (Inches)
Revision: 24-Aug-2021
Document Number: 78020
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Revision: 01-Jan-2023
1
Document Number: 91000
