SQJ170ELP
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Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L
• TrenchFET® Gen IV power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
6.
15
m
m
1
4
G
m
0m
4.9
Top View
2
S
3
S
1
S
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Bottom View
G
PRODUCT SUMMARY
VDS (V)
60
RDS(on) () at VGS = 4.5 V
0.028
RDS(on) () at VGS = 10 V
0.0163
ID (A)
Configuration
Package
N-Channel MOSFET
S
63
Single
PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
60
Gate-source voltage
VGS
± 20
TC = 25 °C
Continuous drain current
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current
L = 0.1 mH
Single pulse avalanche energy
TC = 25 °C
Maximum power dissipation
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
ID
36
63
IDM
66
IAS
18.5
EAS
17.1
TJ, Tstg
c
V
63
IS
PD
UNIT
136
45
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount b
SYMBOL
LIMIT
RthJA
42
RthJC
1.1
UNIT
°C/W
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
S22-0312-Rev. A, 18-Apr-2022
Document Number: 63124
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ170ELP
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
VDS
VGS = 0, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 60 V
-
-
1
VGS = 0 V
VDS = 60 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS 5 V
30
-
-
VGS = 10 V
ID = 10 A
-
0.0133
0.0163
VGS = 10 V
ID = 10 A, TJ = 125 °C
-
-
0.028
VGS = 10 V
ID = 10 A, TJ = 175 °C
-
-
0.034
VGS = 4.5 V
ID = 10 A
-
0.0187
0.028
-
30
-
VDS = 15 V, ID = 10 A
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay
time c
Rise time c
Turn-off delay time c
Fall time c
VGS = 0 V
VDS = 25 V, f = 1 MHz
td(off)
832
1165
411
576
-
35
49
-
12
-
-
4
-
-
2
-
f = 1 MHz
0.6
1.3
2.0
-
9
14
VDD = 30 V, RL = 2.0
ID 10 A, VGEN = 10 V, Rg = 1
-
3
6
-
17
26
-
2
4
VGS = 10 V
VDS = 30 V, ID = 15 A
td(on)
tr
-
tf
pF
nC
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
Body diode reverse recovery time
trr
IF = 10 A, VGS = 0 V
-
-
123
-
-
1.1
V
-
20
40
ns
-
12
24
nC
-
11
-
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
10
-
IRM(REC)
-
1.1
-
Body diode peak reverse recovery
current
IF = 10 A, dI/dt = 100 A/μs
A
ns
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0312-Rev. A, 18-Apr-2022
Document Number: 63124
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ170ELP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
75
Axis Title
50
10000
VGS = 10 V thru 6 V
10000
VGS = 5 V
VGS = 4 V
30
100
15
1000
30
1st line
2nd line
1000
45
2nd line
ID - Drain Current (A)
40
1st line
2nd line
2nd line
ID - Drain Current (A)
60
20
10
TC = 125 °C
VGS = 3 V
0
0
2
4
6
8
TC = -55 °C
0
10
100
TC = 25 °C
10
0
2
4
10
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
Axis Title
Axis Title
0.05
10000
10000
50
0.03
VGS = 4.5 V
0.02
100
VGS = 10 V
0.01
0
10
0
10
20
30
40
40
TC = 25 °C
1000
30
TC = 125 °C
20
100
10
0
50
10
0
10
20
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
Axis Title
Coss
100
100
Crss
10
10
36
48
60
10000
8
ID = 15 A,
VDS = 30 V
1000
6
1st line
2nd line
1000
2nd line
VGS - Gate-to-Source Voltage (V)
1000
24
4
100
2
0
10
0
3
6
9
12
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S22-0312-Rev. A, 18-Apr-2022
50
Axis Title
Ciss
12
40
10
10000
1st line
2nd line
2nd line
C - Capacitance (pF)
30
ID - Drain Current (A)
10 000
0
1st line
2nd line
1000
2nd line
gfs - Transconductance (S)
0.04
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
TC = -55 °C
15
Document Number: 63124
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
ID = 15 A
VGS = 10 V
1000
1.5
VGS = 4.5 V
1.1
100
2nd line
IS - Source Current (A)
1.9
10000
10
1000
TJ = 150 °C
1
100
TJ = 25 °C
0.1
0.7
0.3
0.01
10
-50 -25
0
25
50
10
0
75 100 125 150 175
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
0.10
0.5
10000
10000
0.2
0.04
100
TJ = 150 °C
0.02
1000
-0.1
1st line
2nd line
1000
0.06
2nd line
VGS(th) - Variance (V)
0.08
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
1st line
2nd line
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.3
ID = 5 mA
-0.4
100
ID = 250 μA
-0.7
TJ = 25 °C
0.00
-1.0
10
2
4
6
8
10
-50 -25
10
0
25
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to Source Voltage
Threshold Voltage
Axis Title
Axis Title
100
10000
IDM limited
10000
ID limited
1000
72
69
100
2nd line
ID - Drain Current (A)
ID = 1 mA
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
78
75
50
10
1000
100 μs
1
1 ms
Limited by RDS(on) a
66
10 ms, 100 ms,
1 s, 10 s, DC
TC = 25 °C,
single pulse
63
10
-50 -25
0
25
50
75 100 125 150 175
0.01
0.01
100
BVDSS limited
0.1
1st line
2nd line
0
10
0.1
1
10
TJ - Junction Temperature (°C)
VDS - Drain-to-Source Voltage (V)
Drain Source Breakdown vs. Junction Temperature
Safe Operating Area
100
Note
a. VGS > minimum VGS at which RDS(on) is specified
S22-0312-Rev. A, 18-Apr-2022
Document Number: 63124
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ170ELP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Duty Cycle = 0.5
0.2
0.1
0.1
1000
0.05
0.02
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
1
0.01
100
0.001
Single pulse
0.0001
0.0001
10
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty Cycle = 0.5
0.2
1000
0.1
0.1
0.05
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.02
Single pulse
100
0.01
0.001
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63124.
S22-0312-Rev. A, 18-Apr-2022
Document Number: 63124
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L (PPKSO8LWLA) Case Outline 3
b2
D6
D5
E3
E2
E4
E
E1
E5
W4
W1
D5
z2
Pin 1 marking
A1
b
b1
L
0.2 Gauge line
c
e
L1
ɵ
z1
D2
D1
Backside view (single)
A
Topside view
DIM.
MIN.
A
1.00
A1
0.00
b
0.33
b1
0.43
b2
4.00
c
0.15
D1
4.80
D2
3.86
D5
0.51
D6
2.64
e
E
6.05
E1
4.27
E2
3.18
E3
3.48
E4
2.72
E5
0.71
L
0.62
L1
0.92
W1
0.31
W4
0.31
z1
0.37
z2
0.99
θ
0°
ECN: C23-1016-Rev. D, 18-Sep-2023
DWG: 6067
Note
• Millimeter will govern
MILLIMETERS
NOM.
1.05
--0.41
0.51
4.10
0.20
4.90
3.96
0.61
2.74
1.27 BSC
6.15
4.37
3.28
3.58
2.82
0.81
0.72
1.07
0.41
0.36
0.47
1.09
---
INCHES
MAX.
1.10
0.127
0.49
0.59
4.20
0.25
5.00
4.06
0.71
2.84
MIN.
0.039
0.000
0.013
0.017
0.157
0.006
0.189
0.152
0.020
0.104
6.25
4.47
3.38
3.68
2.92
0.91
0.82
1.22
0.51
0.41
0.57
1.19
5°
0.238
0.168
0.125
0.137
0.107
0.028
0.024
0.036
0.012
0.012
0.015
0.039
0°
NOM.
0.041
--0.016
0.020
0.161
0.008
0.193
0.156
0.024
0.108
0.050 BSC
0.242
0.172
0.129
0.141
0.111
0.032
0.028
0.042
0.016
0.014
0.019
0.043
---
MAX.
0.043
0.005
0.019
0.023
0.165
0.010
0.197
0.160
0.028
0.112
0.246
0.176
0.133
0.145
0.115
0.036
0.032
0.048
0.020
0.016
0.022
0.047
5°
Document Number: 76666
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 18-Sep-2023
PAD Pattern
www.vishay.com
Vishay Siliconix
0.3
(0.012)
3.48
(0.137)
6.73
(0.265)
2.82
(0.111)
0.76
(0.030)
4
(R x R
0. 0
00 .2
8)
5.3
(0.209)
2.7
(0.106)
0.71
(0.028)
Recommended Land Pattern PowerPAK® SO-8L Single Short Ear
16
(R x
0. R0
00 .1
4)
1.1
(0.043)
3.96
(0.156)
1.27
(0.050)
0.68
(0.027)
Dimensions in Millimeters (Inches)
Revision: 24-Aug-2021
Document Number: 78020
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
1
Document Number: 91000
