SQJ186ELP-T1_GE3

SQJ186ELP-T1_GE3

  • 厂商:

    TFUNK(威世)

  • 封装:

    SO-8

  • 描述:

    表面贴装型 N 通道 80 V 66A(Tc) 135W(Tc) PowerPAK® SO-8

  • 详情介绍
  • 数据手册
  • 价格&库存
SQJ186ELP-T1_GE3 数据手册
SQJ186ELP www.vishay.com Vishay Siliconix Automotive N-Channel 80 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L • TrenchFET® Gen IV power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D 6. 15 m m 1 4 G m 0m 4.9 Top View 3 S 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 4.5 V 0.0150 RDS(on) (Ω) at VGS = 10 V 0.0125 ID (A) Configuration G 80 N-Channel MOSFET 66 S Single ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and halogen-free SQJ186ELP (for detailed order number please see www.vishay.com/doc?79776) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 80 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 66 IS 66 112 IAS 22.5 PD TJ, Tstg Soldering recommendations (peak temperature) d V 38 IDM EAS UNIT 25 135 45 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 42 RthJC 1.1 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S21-0104-Rev. A, 08-Feb-2021 Document Number: 66835 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ186ELP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS = 0, ID = 250 μA 80 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 80 V - - 1 VGS = 0 V VDS = 80 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 80 V, TJ = 175 °C - - 250 VGS = 10 V VDS ≥ 5 V 30 - - VGS = 4.5 V ID = 20 A - 0.0120 0.0150 VGS = 10 V ID = 20 A - 0.0100 0.0125 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0250 VGS = 10 V ID = 20 A, TJ = 175 °C VDS = 15 V, ID = 20 A - - 0.0320 - 62 - V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Rg Turn-on delay time c Rise time c Turn-off delay time c Fall time c VGS = 0 V VDS = 25 V, f = 1 MHz td(off) 1660 2325 235 320 - 12 17 - 30 45 - 6 - - 6 - f = 1 MHz 0.7 1.4 2.1 - 8 12 VDD = 40 V, RL = 1.6 Ω ID ≅ 25 A, VGEN = 10 V, Rg = 1 Ω - 3 6 - 23 35 - 4 8 VGS = 10 V VDS = 40 V, ID = 25 A td(on) tr - tf pF nC Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr IF = 15 A, VGS = 0 V - - 122 - - 1.1 V - 36 72 ns - 44 88 nC - 25 - Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - 13 - IRM(REC) - 2.2 - Body diode peak reverse recovery current IF = 10 A, di/dt = 100 A/μs A ns A Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0104-Rev. A, 08-Feb-2021 Document Number: 66835 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ186ELP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 170 100 10000 1000 102 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 5 V VGS = 4 V 68 100 34 2nd line gfs - Transconductance (S) TC = 25 °C 136 TC = -55 °C 80 60 TC = 125 °C 40 20 VGS = 3 V 0 0 10 0 2 4 6 8 0 10 20 40 60 80 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Output Characteristics Transconductance Axis Title 100 Axis Title 170 10 000 10000 10000 Ciss 68 100 TC = 25 °C 1000 1000 Coss 1st line 2nd line 102 2nd line C - Capacitance (pF) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 136 100 100 Crss 10 34 TC = 125 °C TC = -55 °C 0 1 10 0 2 4 6 8 10 0 16 32 VDS - Drain-to-Source Voltage (V) Transfer Characteristics Capacitance Axis Title Axis Title VGS = 4.5 V 0.012 100 VGS = 10 V 0.006 0 10 40 60 80 100 10000 ID = 25 A VDS = 40 V 8 1000 6 1st line 2nd line 1000 0.018 2nd line VGS - Gate-to-Source Voltage (V) 0.024 20 4 100 2 0 10 0 5 10 15 20 25 30 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge S21-0104-Rev. A, 08-Feb-2021 80 10 10000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 64 VGS - Gate-to-Source Voltage (V) 0.030 0 48 35 40 Document Number: 66835 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ186ELP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 0.060 10000 2.3 10000 1000 1.7 VGS = 4.5 V 1.4 1.1 100 0.8 0.045 1000 0.030 TJ = 150 °C 100 TJ = 125 °C 0.015 0.5 TJ = 25 °C 0.2 0 10 -50 -25 0 25 50 75 10 100 125 150 175 0 2 4 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to Source Voltage Axis Title Axis Title 0.7 10000 ID = 1 mA 10000 1000 92 90 88 100 86 2nd line VGS(th) - Variance (V) 0.3 94 1000 -0.1 1st line 2nd line 96 1st line 2nd line ID = 5 mA -0.5 100 ID = 250 μA -0.9 84 82 -1.3 10 -50 -25 0 25 50 75 100 125 150 175 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Threshold Voltage Axis Title Axis Title 100 10000 TJ = 150 °C 1st line 2nd line 1000 1 100 0.1 10 0.6 0.9 100 us 1000 1 ms 10 1 Limited by RDS(on) 10 ms 100ms, 1 s, 10 s, DC a 100 BVDSS limited TC = 25 °C, single pulse 0.01 0.3 IDM limited 0.1 TJ = 25 °C 0 2nd line ID - Drain Current (A) 100 10 10000 1000 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 6 TJ - Junction Temperature (°C) 98 2nd line IS - Source Current (A) 1st line 2nd line VGS = 10 V 2.0 2nd line RDS(on) - On-Resistance (Ω) ID = 10 A 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.6 1.2 0.01 0.01 0.1 1 10 100 VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V) Source Drain Diode Forward Voltage Safe Operating Area 10 1000 Note a. VGS > minimum VGS at which RDS(on) is specified S21-0104-Rev. A, 08-Feb-2021 Document Number: 66835 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ186ELP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 0.2 0.1 0.05 0.1 1000 0.02 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.01 Single pulse 100 0.001 0.0001 0.0001 10 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.05 0.02 Single pulse 100 0.01 0.001 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66835. S21-0104-Rev. A, 08-Feb-2021 Document Number: 66835 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L (PPKSO8LWLA) Case Outline 3 b2 D6 D5 E3 E2 E4 E E1 E5 W4 W1 D5 z2 Pin 1 marking A1 b b1 L 0.2 Gauge line c e L1 ɵ z1 D2 D1 Backside view (single) A Topside view DIM. MIN. A 1.00 A1 0.00 b 0.33 b1 0.43 b2 4.00 c 0.15 D1 4.80 D2 3.86 D5 0.51 D6 2.64 e E 6.05 E1 4.27 E2 3.18 E3 3.48 E4 2.72 E5 0.71 L 0.62 L1 0.92 W1 0.31 W4 0.31 z1 0.37 z2 0.99 θ 0° ECN: C23-1016-Rev. D, 18-Sep-2023 DWG: 6067 Note • Millimeter will govern MILLIMETERS NOM. 1.05 --0.41 0.51 4.10 0.20 4.90 3.96 0.61 2.74 1.27 BSC 6.15 4.37 3.28 3.58 2.82 0.81 0.72 1.07 0.41 0.36 0.47 1.09 --- INCHES MAX. 1.10 0.127 0.49 0.59 4.20 0.25 5.00 4.06 0.71 2.84 MIN. 0.039 0.000 0.013 0.017 0.157 0.006 0.189 0.152 0.020 0.104 6.25 4.47 3.38 3.68 2.92 0.91 0.82 1.22 0.51 0.41 0.57 1.19 5° 0.238 0.168 0.125 0.137 0.107 0.028 0.024 0.036 0.012 0.012 0.015 0.039 0° NOM. 0.041 --0.016 0.020 0.161 0.008 0.193 0.156 0.024 0.108 0.050 BSC 0.242 0.172 0.129 0.141 0.111 0.032 0.028 0.042 0.016 0.014 0.019 0.043 --- MAX. 0.043 0.005 0.019 0.023 0.165 0.010 0.197 0.160 0.028 0.112 0.246 0.176 0.133 0.145 0.115 0.036 0.032 0.048 0.020 0.016 0.022 0.047 5° Document Number: 76666 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 18-Sep-2023 PAD Pattern www.vishay.com Vishay Siliconix 0.3 (0.012) 3.48 (0.137) 6.73 (0.265) 2.82 (0.111) 0.76 (0.030) 4 (R x R 0. 0 00 .2 8) 5.3 (0.209) 2.7 (0.106) 0.71 (0.028) Recommended Land Pattern PowerPAK® SO-8L Single Short Ear 16 (R x 0. R0 00 .1 4) 1.1 (0.043) 3.96 (0.156) 1.27 (0.050) 0.68 (0.027) Dimensions in Millimeters (Inches) Revision: 24-Aug-2021 Document Number: 78020 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000
SQJ186ELP-T1_GE3
物料型号:SQJ186ELP 器件简介:SQJ186ELP 是 Vishay Siliconix 生产的一款汽车级 N-Channel 80V (D-S) MOSFET,使用 PowerPAK® SO-8L 封装,符合 AEC-Q101 标准,并且通过了 100% Rg 和 UIS 测试。

引脚分配:该器件具有 3 个源极(S),2 个漏极(D),以及 1 个栅极(G)。

参数特性: - 漏源电压(Vds):80V - 导通电阻(Rds(on)):在 Vgs=4.5V 时为 0.0150Ω,Vgs=10V 时为 0.0125Ω - 连续漏极电流(ID):25°C 时为 66A,125°C 时为 38A - 脉冲漏极电流(Idm):112A - 单脉冲雪崩电流(Ias):22.5A - 最大功耗(Pd):25°C 时为 135W,125°C 时为 45W 功能详解:SQJ186ELP 利用 TrenchFET® Gen IV 技术,提供了低导通电阻和快速开关特性,适用于需要高效率和高可靠性的汽车应用。

应用信息:适用于汽车电子系统中的负载开关、电源管理、马达控制等应用。

封装信息:PowerPAK® SO-8L 封装,无铅且无卤素,详细信息可参考 Vishay 提供的封装图和尺寸数据。


请注意,以上信息是基于提供的PDF文档内容的中文分析,如需更详尽的数据或应用指导,建议联系 Vishay 的技术支持。
SQJ186ELP-T1_GE3 价格&库存

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SQJ186ELP-T1_GE3
  •  国内价格
  • 50+6.44617
  • 100+5.12986
  • 250+5.02572
  • 1000+3.56570

库存:3000

SQJ186ELP-T1_GE3
  •  国内价格 香港价格
  • 3000+3.627023000+0.46725
  • 6000+3.368486000+0.43394
  • 9000+3.236799000+0.41698
  • 15000+3.0889115000+0.39793
  • 21000+3.0142021000+0.38830

库存:4263

SQJ186ELP-T1_GE3
  •  国内价格
  • 10+6.57947
  • 50+6.44617
  • 100+5.12986
  • 250+5.02572
  • 1000+3.56570

库存:3000

SQJ186ELP-T1_GE3
  •  国内价格 香港价格
  • 1+13.808361+1.77884
  • 10+8.7265010+1.12418
  • 100+5.80185100+0.74742
  • 500+4.54508500+0.58551
  • 1000+4.140661000+0.53342

库存:4263