SQJ186EP-T1_GE3

SQJ186EP-T1_GE3

  • 厂商:

    TFUNK(威世)

  • 封装:

    SO-8

  • 描述:

    表面贴装型 N 通道 80 V 60A(Tc) 135W(Tc) PowerPAK® SO-8

  • 数据手册
  • 价格&库存
SQJ186EP-T1_GE3 数据手册
SQJ186EP www.vishay.com Vishay Siliconix Automotive N-Channel 80 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D 6. 15 m m 1 4 G m 0m 4.9 Top View 3 S 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V 0.015 ID (A) Configuration G 80 60 N-Channel MOSFET Single S ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and halogen-free SQJ186EP (for detailed order number please see www.vishay.com/doc?79776) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 80 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 60 IS 122 112 IAS 22.5 PD TJ, Tstg Soldering recommendations (peak temperature) d V 35 IDM EAS UNIT 25 135 45 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 42 RthJC 1.1 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S21-0366-Rev. A, 19-Apr-2021 Document Number: 79383 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ186EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS = 0, ID = 250 μA 80 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 80 V - - 10 VGS = 0 V VDS = 80 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 80 V, TJ = 175 °C - - 250 VGS = 10 V VDS ≥ 5 V 30 - - VGS = 10 V ID = 20 A - 0.0110 0.0150 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0300 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0380 - 30 - VDS = 15 V, ID = 10 A V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 40 V, ID = 25 A f = 1 MHz td(on) tr td(off) VDD = 40 V, RL = 1.6 Ω ID ≅ 25 A, VGEN = 10 V, Rg = 1 Ω tf - 1387 1942 - 228 320 - 12 17 - 24 36 - 7 - - 6 - 0.7 1.5 2.3 - 9 14 - 3 6 - 19 29 - 4 8 pF nC Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr IF = 15 A, VGS = 0 V IF = 10 A, di/dt = 100 A/μs - - 488 - - 1.3 V - 39 78 ns - 53 106 nC Reverse recovery fall time ta - 27 - Reverse recovery rise time tb - 12 - IRM(REC) - 2.6 - Body diode peak reverse recovery current A ns A Notes e. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % f. Guaranteed by design, not subject to production testing g. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0366-Rev. A, 19-Apr-2021 Document Number: 79383 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ186EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 150 75 10000 VGS = 6 V 1000 90 1st line 2nd line 2nd line ID - Drain Current (A) 120 VGS = 5 V 60 100 30 2nd line gfs - Transconductance (S) VGS = 10 V thru 7 V TC = -55 °C 60 TC = 25 °C 45 TC = 125 °C 30 15 VGS = 4 V 0 0 10 0 2 4 6 8 0 10 15 30 60 75 Transconductance Output Characteristics Axis Title Axis Title 100 10 000 10000 10000 Ciss 1st line 2nd line 40 TC = 25 °C 20 100 1000 1000 Coss 1st line 2nd line 1000 60 2nd line C - Capacitance (pF) 80 2nd line ID - Drain Current (A) 45 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 100 100 Crss 10 TC = 125 °C TC = -55 °C 0 1 10 0 2 4 6 8 10 10 0 16 32 VDS - Drain-to-Source Voltage (V) Transfer Characteristics Capacitance Axis Title Axis Title VGS = 10 V 0.010 100 0.005 0 10 40 60 80 100 10000 ID = 25 A VDS = 40 V 8 1000 6 1st line 2nd line 1000 0.015 2nd line VGS - Gate-to-Source Voltage (V) 0.020 20 4 100 2 0 10 0 5 10 15 20 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge S21-0366-Rev. A, 19-Apr-2021 80 10 10000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 64 VGS - Gate-to-Source Voltage (V) 0.025 0 48 25 30 Document Number: 79383 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ186EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 0.100 VGS = 10 V 1000 1.6 1.1 100 0.6 0.1 2nd line RDS(on) - On-Resistance (Ω) ID = 10 A 2.1 0 25 50 75 0.080 1000 0.060 0.040 0.020 TJ = 25 °C 100 125 150 175 0 2 4 10 6 8 10 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to Source Voltage Axis Title Axis Title 97 0.7 10000 ID = 1 mA 10000 0.3 88 100 85 1000 -0.1 ID = 5 mA -0.5 100 -0.9 82 0 25 50 75 ID = 250 μA -1.3 10 -50 -25 1st line 2nd line 1000 91 2nd line VGS(th) - Variance (V) 94 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 100 TJ = 150 °C 0 10 -50 -25 10000 1st line 2nd line 10000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.6 100 125 150 175 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Threshold Voltage Axis Title Axis Title 100 10000 10000 1000 IDM limited 1 100 0.1 10 0.4 0.6 0.8 1 ms 10 ms 1 Limited by RDS(on) a 100 ms, 1 s, 10 s, DC 100 BVDSS limited TC = 25 °C, single pulse 0.01 0.2 1000 10 0.1 TJ = 25 °C 0 100 μs 1st line 2nd line 1000 TJ = 150 °C 2nd line ID - Drain Current (A) 10 1st line 2nd line 2nd line IS - Source Current (A) 100 1.0 1.2 0.01 0.01 0.1 1 10 100 VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V) Source Drain Diode Forward Voltage Safe Operating Area 10 1000 Note a. VGS > minimum VGS at which RDS(on) is specified S21-0366-Rev. A, 19-Apr-2021 Document Number: 79383 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ186EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Duty Cycle = 0.5 0.2 0.1 0.1 1000 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 1 0.02 0.01 100 Single pulse 0.001 0.0001 0.0001 10 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.05 0.02 0.01 100 Single pulse 0.001 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?79383. S21-0366-Rev. A, 19-Apr-2021 Document Number: 79383 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L (PPKSO8LWLA) Case Outline 3 b2 D6 D5 E3 E2 E4 E E1 E5 W4 W1 D5 z2 Pin 1 marking A1 b b1 L 0.2 Gauge line c e L1 ɵ z1 D2 D1 Backside view (single) A Topside view DIM. MIN. A 1.00 A1 0.00 b 0.33 b1 0.43 b2 4.00 c 0.15 D1 4.80 D2 3.86 D5 0.51 D6 2.64 e E 6.05 E1 4.27 E2 3.18 E3 3.48 E4 2.72 E5 0.71 L 0.62 L1 0.92 W1 0.31 W4 0.31 z1 0.37 z2 0.99 θ 0° ECN: C23-1016-Rev. D, 18-Sep-2023 DWG: 6067 Note • Millimeter will govern MILLIMETERS NOM. 1.05 --0.41 0.51 4.10 0.20 4.90 3.96 0.61 2.74 1.27 BSC 6.15 4.37 3.28 3.58 2.82 0.81 0.72 1.07 0.41 0.36 0.47 1.09 --- INCHES MAX. 1.10 0.127 0.49 0.59 4.20 0.25 5.00 4.06 0.71 2.84 MIN. 0.039 0.000 0.013 0.017 0.157 0.006 0.189 0.152 0.020 0.104 6.25 4.47 3.38 3.68 2.92 0.91 0.82 1.22 0.51 0.41 0.57 1.19 5° 0.238 0.168 0.125 0.137 0.107 0.028 0.024 0.036 0.012 0.012 0.015 0.039 0° NOM. 0.041 --0.016 0.020 0.161 0.008 0.193 0.156 0.024 0.108 0.050 BSC 0.242 0.172 0.129 0.141 0.111 0.032 0.028 0.042 0.016 0.014 0.019 0.043 --- MAX. 0.043 0.005 0.019 0.023 0.165 0.010 0.197 0.160 0.028 0.112 0.246 0.176 0.133 0.145 0.115 0.036 0.032 0.048 0.020 0.016 0.022 0.047 5° Document Number: 76666 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 18-Sep-2023 PAD Pattern www.vishay.com Vishay Siliconix 0.3 (0.012) 3.48 (0.137) 6.73 (0.265) 2.82 (0.111) 0.76 (0.030) 4 (R x R 0. 0 00 .2 8) 5.3 (0.209) 2.7 (0.106) 0.71 (0.028) Recommended Land Pattern PowerPAK® SO-8L Single Short Ear 16 (R x 0. R0 00 .1 4) 1.1 (0.043) 3.96 (0.156) 1.27 (0.050) 0.68 (0.027) Dimensions in Millimeters (Inches) Revision: 24-Aug-2021 Document Number: 78020 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000
SQJ186EP-T1_GE3 价格&库存

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SQJ186EP-T1_GE3
  •  国内价格
  • 50+6.49511
  • 100+6.37744
  • 250+6.26393
  • 1000+6.15146

库存:2010

SQJ186EP-T1_GE3
  •  国内价格
  • 10+6.61279
  • 50+6.49511
  • 100+6.37744
  • 250+6.26393
  • 1000+6.15146

库存:2010