SQJ202EP-T2_GE3

SQJ202EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 12 V (D-S) 175 °C MOSFETs FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET N-CHANNEL 1 N-CHANNEL 2 12 12 RDS(on) (Ω) at VGS = 10 V 0.0065 0.0033 • 100 % Rg and UIS tested RDS(on) (Ω) at VGS = 4.5 V 0.0093 0.0045 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VDS (V) ID (A) 20 Configuration 60 Dual N • AEC-Q101 qualified d PowerPAK® SO-8L Dual Asymmetric Package D1 PowerPAK® SO-8L Dual Asymmetric D2 D1 G1 D2 15 6. m m 13 5. 1 m m Top View 3 G2 1 2 S1 G1 S1 4 S2 G2 Bottom View S2 N-Channel 1 MOSFET N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 Drain-Source Voltage VDS 12 12 Gate-Source Voltage VGS Continuous Drain Current a TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID ± 20 20 60 20 60 IS 20a 44 IDM 80 180 IAS 18 18 EAS 16.2 16.2 27 48 9 16 PD TJ, Tstg -55 to +175 Soldering Recommendations (Peak Temperature) e, f UNIT V A mJ W °C 260 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c SYMBOL N-CHANNEL 1 N-CHANNEL 2 RthJA 85 85 RthJC 5.5 3.1 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S15-2474-Rev. A, 19-Oct-15 Document Number: 62926 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ202EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - - UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b VDS VGS(th) IGSS IDSS ID(on) RDS(on) VGS = 0 V, ID = 250 μA N-Ch 1 12 VGS = 0 V, ID = 250 μA N-Ch 2 12 - - VDS = VGS, ID = 250 μA N-Ch 1 1 1.5 2 VDS = VGS, ID = 250 μA N-Ch 2 1 1.5 2 N-Ch 1 - - ± 100 N-Ch 2 - - ± 100 VDS = 0 V, VGS = ± 20 V VGS = 0 V VDS = 12 V N-Ch 1 - - 1 VGS = 0 V VDS = 12 V N-Ch 2 - - 1 VGS = 0 V VDS = 12 V, TJ = 125 °C N-Ch 1 - - 50 VGS = 0 V VDS = 12 V, TJ = 125 °C N-Ch 2 - - 50 VGS = 0 V VDS = 12 V, TJ = 175 °C N-Ch 1 - - 500 VGS = 0 V VDS = 12 V, TJ = 175 °C N-Ch 2 - - 500 VGS = 10 V VDS ≥ 5 V N-Ch 1 20 - - VGS = 10 V VDS ≥ 5 V N-Ch 2 30 - - VGS = 10 V ID = 15 A N-Ch 1 - 0.0052 0.0065 VGS = 10 V ID = 20 A N-Ch 2 - 0.0025 0.0033 VGS = 10 V ID = 15 A, TJ = 125 °C N-Ch 1 - 0.0075 - VGS = 10 V ID = 20 A, TJ = 125 °C N-Ch 2 - 0.0031 - VGS = 10 V ID = 15 A, TJ = 175 °C N-Ch 1 - 0.0085 - VGS = 10 V ID = 20 A, TJ = 175 °C N-Ch 2 - 0.0038 - VGS = 4.5 V ID = 13 A N-Ch 1 - 0.0075 0.0093 VGS = 4.5 V ID = 18 A N-Ch 2 - 0.0034 0.0045 VDS = 10 V, ID = 15 A N-Ch 1 - 49 - VDS = 10 V, ID = 20 A N-Ch 2 - 91 - gfs V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg VGS = 0 V VDS = 6 V, f = 1 MHz N-Ch 1 - 777 975 VGS = 0 V VDS = 6 V, f = 1 MHz N-Ch 2 - 2018 2525 VGS = 0 V VDS = 6 V, f = 1 MHz N-Ch 1 - 539 675 VGS = 0 V VDS = 6 V, f = 1 MHz N-Ch 2 - 1313 1645 VGS = 0 V VDS = 6 V, f = 1 MHz N-Ch 1 - 270 340 VGS = 0 V VDS = 6 V, f = 1 MHz N-Ch 2 - 683 855 VGS = 10 V VDS = 6 V, ID = 20 A N-Ch 1 - 14.5 22 VGS = 10 V VDS = 6 V, ID = 60 A N-Ch 2 - 35.9 54 VGS = 10 V VDS = 6 V, ID = 20 A N-Ch 1 - 1.7 - VGS = 10 V VDS = 6 V, ID = 60 A N-Ch 2 - 4.1 - VGS = 10 V VDS = 6 V, ID = 20 A N-Ch 1 - 2.1 - VGS = 10 V VDS = 6 V, ID = 60 A N-Ch 2 - 4.3 - f = 1 MHz N-Ch 1 1.3 2.6 4 N-Ch 2 0.5 1.1 1.7 pF nC Ω Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. S15-2474-Rev. A, 19-Oct-15 Document Number: 62926 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ202EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c SYMBOL td(on) tr td(off) tf TEST CONDITIONS MIN. TYP. MAX. VDD = 6 V, RL = 0.3 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 8.8 13.5 VDD = 6 V, RL = 0.1 Ω ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 10.7 16.5 VDD = 6 V, RL = 0.3 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 3.2 5 VDD = 6 V, RL = 0.1 Ω ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 4.5 7 VDD = 6 V, RL = 0.3 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 20 30 VDD = 6 V, RL = 0.1 Ω ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 28 42 VDD = 6 V, RL = 0.3 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 2.6 4 VDD = 6 V, RL = 0.1 Ω ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 5 8 N-Ch 1 - - 80 N-Ch 2 - - 180 IF = 10 A, VGS = 0 V N-Ch 1 - 0.8 1.2 IF = 20 A, VGS = 0 V N-Ch 2 - 0.8 1.2 UNIT ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD A V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2474-Rev. A, 19-Oct-15 Document Number: 62926 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ202EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 70 VGS = 10 V thru 4 V TC = - 55 °C 56 gfs - Transconductance (S) ID - Drain Current (A) 40 TC = 25 °C 30 20 10 42 TC = 125 °C 28 14 VGS = 3 V 0 0 2 4 6 8 10 0 9 12 Output Characteristics Transconductance 1500 32 1200 TC = 25 °C 16 15 900 Ciss Coss 600 Crss TC = 125°C 8 300 TC = - 55 °C 0 0 0 1 2 3 4 0 5 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Capacitance 0.01 12 VGS - Gate-to-Source Voltage (V) 10 0.01 RDS(on) - On-Resistance (Ω) 6 ID - Drain Current (A) 40 24 3 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) ID - Drain Current (A) 0 VGS = 4.5 V 0.01 VGS = 10 V 0.00 0.00 0.00 8 ID = 20A VDS = 6 V 6 4 2 0 0 10 20 30 40 50 0 4 8 12 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge S15-2474-Rev. A, 19-Oct-15 16 20 Document Number: 62926 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ202EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.05 100 0.04 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.03 0.02 TJ = 150 °C 0.01 TJ = 25 °C 0.00 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.7 VDS - Drain-to-Source Voltage (V) 16 0.3 VGS(th) Variance (V) 2 VSD - Source-to-Drain Voltage (V) - 0.1 ID = 5 mA - 0.5 ID = 250 μA - 0.9 ID = 1 mA 15 14 13 12 - 1.3 11 - 50 - 25 0 25 50 75 100 125 150 175 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature 100 2.0 IDM Limited 1.7 VGS = 4.5 V ID = 15 A 10 1.4 VGS = 10 V 1.1 ID - Drain Current (A) RDS(on) - On-Resistance (Normalized) 100 μs 1 ms ID Limited 1 10 ms 100 ms, 1 s, 10 s, DC Limited by RDS(on)* 0.1 0.8 TC = 25 °C Single Pulse 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature S15-2474-Rev. A, 19-Oct-15 175 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 62926 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ202EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 t1 t2 4. Surface Mounted 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 Square Wave Pulse Duration (s) 10 - 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. S15-2474-Rev. A, 19-Oct-15 Document Number: 62926 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ202EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 80 120 TC = - 55 °C VGS = 10 V thru 4 V TC = 25 °C 96 gfs - Transconductance (S) ID - Drain Current (A) 64 48 32 16 72 TC = 125 °C 48 24 VGS = 3 V 0 0 2 4 6 8 10 0 16 Transconductance 36 2400 TC = 25 °C 18 1800 Coss 1200 TC = - 55 °C TC = 125°C 20 Ciss Crss 600 0 0 0 1 2 3 4 0 5 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Capacitance 0.005 12 VGS - Gate-to-Source Voltage (V) 10 0.004 RDS(on) - On-Resistance (Ω) 12 Output Characteristics 3000 9 8 VDS - Drain-to-Source Voltage (V) 45 27 4 ID - Drain Current (A) C - Capacitance (pF) ID - Drain Current (A) 0 0.003 VGS = 4.5 V 0.002 VGS = 10 V 0.001 0.000 8 ID = 60A VDS = 6 V 6 4 2 0 0 10 20 30 40 50 0 8 16 24 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge S15-2474-Rev. A, 19-Oct-15 32 40 Document Number: 62926 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ202EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.015 100 0.012 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.009 0.006 TJ = 150 °C 0.003 TJ = 25 °C 0.000 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.7 VDS - Drain-to-Source Voltage (V) 17 0.3 VGS(th) Variance (V) 2 VSD - Source-to-Drain Voltage (V) - 0.1 ID = 5 mA - 0.5 ID = 250 μA - 0.9 - 1.3 16 ID = 1 mA 15 14 13 12 - 50 - 25 0 25 50 75 100 125 150 175 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature 1000 2.0 1.7 VGS = 4.5 V ID = 20 A 100 1.4 VGS = 10 V 1.1 ID - Drain Current (A) RDS(on) - On-Resistance (Normalized) IDM Limited Limited by RDS(on)* 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature S15-2474-Rev. A, 19-Oct-15 175 ID Limited 10 0.1 0.01 TC = 25 °C Single Pulse BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 62926 8 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ202EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 4. Surface Mounted 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 Square Wave Pulse Duration (s) 10 - 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62926. S15-2474-Rev. A, 19-Oct-15 Document Number: 62926 9 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Assymetric Case Outline b2 D5 K1 D4 D3 D2 A1 b b1 e D1 θ b3 K2 0.25 gauge line D PIN 1 PIN 1 DIM. A A1 b b1 b2 b3 c D D1 D2 D3 D4 D5 e E E1 E2 E3 F L L1 K K1 K2 W W1 W2 W3 W4 θ DWG: 6009 MIN. 1.00 0.00 0.33 0.44 4.80 0.04 0.20 5.00 4.80 3.63 0.81 1.98 1.47 1.20 6.05 4.27 2.75 1.89 0.05 0.62 0.92 0.41 0.64 0.54 0.13 0.31 2.72 2.86 0.41 5° MILLIMETERS NOM. 1.07 0.06 0.41 0.51 4.90 0.12 0.25 5.13 4.90 3.73 0.91 2.08 1.57 1.27 6.15 4.37 2.85 1.99 0.12 0.72 1.07 0.51 0.74 0.64 0.23 0.41 2.82 2.96 0.51 10° MAX. 1.14 0.13 0.48 0.58 5.00 0.20 0.30 5.25 5.00 3.83 1.01 2.18 1.67 1.34 6.25 4.47 2.95 2.09 0.19 0.82 1.22 0.61 0.84 0.74 0.33 0.51 2.92 3.06 0.61 12° MIN. 0.039 0.000 0.013 0.017 0.189 0.002 0.008 0.197 0.189 0.143 0.032 0.078 0.058 0.047 0.238 0.168 0.108 0.074 0.002 0.024 0.036 0.016 0.025 0.021 0.005 0.012 0.107 0.113 0.016 5° INCHES NOM. 0.042 0.003 0.016 0.020 0.193 0.005 0.010 0.202 0.193 0.147 0.036 0.082 0.062 0.050 0.242 0.172 0.112 0.078 0.005 0.028 0.042 0.020 0.029 0.025 0.009 0.016 0.111 0.117 0.020 10° MAX. 0.045 0.005 0.019 0.023 0.197 0.008 0.012 0.207 0.197 0.151 0.040 0.086 0.066 0.053 0.246 0.176 0.116 0.082 0.007 0.032 0.048 0.024 0.033 0.029 0.013 0.020 0.115 0.120 0.024 12° Note • Millimeters will govern Document Number: 62714 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 C14-0057-Rev. D, 07-Apr-14 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PADs FOR PowerPAK® SO-8L DUAL ASYMMETRIC Recommended Minimum Pads Dimensions in mm [inches] Revision: 07-Mar-13 1 Document Number: 64477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 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Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000