SQJ208EP
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Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs
FEATURES
PowerPAK® SO-8L Dual Asymmetric
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D1
• Optimized for synchronous buck applications
D2
15
6.
m
m
1
13
5.
m
m
4
G2
Bottom View
Top View
2
3 G1
S2
1
S1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1
D2
PRODUCT SUMMARY
N-CHANNEL 1
N-CHANNEL 2
40
40
RDS(on) () at VGS = 10 V
0.00940
0.00390
RDS(on) () at VGS = 4.5 V
0.01173
0.00480
20
60
VDS (V)
ID (A)
Configuration
Package
Dual
PowerPAK SO-8L asymmetric
G1
G2
S1
N-Channel 1 MOSFET
S2
N-Channel 2 MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL 1
N-CHANNEL 2
Drain-source voltage
VDS
40
40
Gate-source voltage
VGS
Continuous drain current
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
± 20
20 a
60 a
20 a
46
IS
20 a
44
IDM
80
220
IAS
18
29
EAS
16
42
27
48
9
16
PD
TJ, Tstg
-55 to +175
Soldering recommendations (peak temperature) d, e
UNIT
V
A
mJ
W
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
N-CHANNEL 1
N-CHANNEL 2
RthJA
85
85
RthJC
5.5
3.1
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S19-0037-Rev. B, 21-Jan-2019
Document Number: 77836
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ208EP
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
-
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
N-Ch 1
40
-
VGS = 0 V, ID = 250 μA
N-Ch 2
40
-
-
VDS = VGS, ID = 250 μA
N-Ch 1
1.3
1.8
2.3
VDS = VGS, ID = 250 μA
N-Ch 2
1.4
1.9
2.4
N-Ch 1
-
-
± 100
N-Ch 2
-
-
± 100
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 40 V
N-Ch 1
-
-
1
VGS = 0 V
VDS = 40 V
N-Ch 2
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
N-Ch 1
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 125 °C
N-Ch 2
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
N-Ch 1
-
-
250
VGS = 0 V
VDS = 40 V, TJ = 175 °C
N-Ch 2
-
-
300
VGS = 10 V
VDS 5 V
N-Ch 1
10
-
-
VGS = 10 V
VDS 5 V
N-Ch 2
20
-
-
VGS = 10 V
ID = 6 A
N-Ch 1
-
0.00770 0.00940
VGS = 10 V
ID = 10 A
N-Ch 2
-
0.00320 0.00390
VGS = 10 V
ID = 6 A, TJ = 125 °C
N-Ch 1
-
-
0.01370
VGS = 10 V
ID = 10 A, TJ = 125 °C
N-Ch 2
-
-
0.00570
VGS = 10 V
ID = 6 A, TJ = 175 °C
N-Ch 1
-
-
0.01600
-
0.00670
VGS = 10 V
ID = 10 A, TJ = 175 °C
N-Ch 2
-
VGS = 4.5 V
ID = 4 A
N-Ch 1
-
0.00970 0.01173
VGS = 4.5 V
ID = 8 A
0.00400 0.00480
N-Ch 2
-
VDS = 15 V, ID = 6 A
N-Ch 1
-
32
-
VDS = 15 V, ID = 10 A
N-Ch 2
-
51
-
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
S19-0037-Rev. B, 21-Jan-2019
VGS = 0 V
VDS = 25 V, f = 1 MHz
N-Ch 1
-
1197
1700
VGS = 0 V
VDS = 25 V, f = 1 MHz
N-Ch 2
-
2839
3900
VGS = 0 V
VDS = 25 V, f = 1 MHz
N-Ch 1
-
331
500
VGS = 0 V
VDS = 25 V, f = 1 MHz
N-Ch 2
-
888
1250
VGS = 0 V
VDS = 25 V, f = 1 MHz
N-Ch 1
-
31
50
VGS = 0 V
VDS = 25 V, f = 1 MHz
N-Ch 2
-
27
40
VGS = 10 V
VDS = 20 V, ID = 1 A
N-Ch 1
-
22
33
VGS = 10 V
VDS = 20 V, ID = 1 A
N-Ch 2
-
48.2
75
VGS = 10 V
VDS = 20 V, ID = 1 A
N-Ch 1
-
3.5
-
VGS = 10 V
VDS = 20 V, ID = 1 A
N-Ch 2
-
7.1
-
VGS = 10 V
VDS = 20 V, ID = 1 A
N-Ch 1
-
3.9
-
VGS = 10 V
VDS = 20 V, ID = 1 A
N-Ch 2
-
8
-
N-Ch 1
1.74
3.49
5.30
N-Ch 2
0.55
1.10
1.65
f = 1 MHz
pF
nC
Document Number: 77836
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ208EP
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Dynamic b
Turn-on delay
Rise
time c
time c
Turn-off delay time c
Fall time c
td(on)
tr
td(off)
tf
VDD = 20 V, RL = 20 ,
ID 1 A, VGEN = 10 V, Rg = 1
N-Ch 1
-
10
20
VDD = 20 V, RL = 20 ,
ID 1 A, VGEN = 10 V, Rg = 1
N-Ch 2
-
14
25
VDD = 20 V, RL = 20 ,
ID 1 A, VGEN = 10 V, Rg = 1
N-Ch 1
-
4
10
VDD = 20 V, RL = 20 ,
ID 1 A, VGEN = 10 V, Rg = 1
N-Ch 2
-
5
10
VDD = 20 V, RL = 20 ,
ID 1 A, VGEN = 10 V, Rg = 1
N-Ch 1
-
24
50
VDD = 20 V, RL = 20 ,
ID 1 A, VGEN = 10 V, Rg = 1
N-Ch 2
-
35
55
VDD = 20 V, RL = 20 ,
ID 1 A, VGEN = 10 V, Rg = 1
N-Ch 1
-
25
50
VDD = 20 V, RL = 20 ,
ID 1 A, VGEN = 10 V, Rg = 1
N-Ch 2
-
57
90
N-Ch 1
-
-
80
N-Ch 2
-
-
220
IF = 6 A, VGS = 0 V
N-Ch 1
-
0.77
1.2
IF = 10 A, VGS = 0 V
N-Ch 2
-
0.76
1.2
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
Body diode peak reverse recovery
current
tb
IRM(REC)
IF = 1 A, di/dt = 100 A/μs
N-Ch 1
-
28
60
IF = 1 A, di/dt = 100 A/μs
N-Ch 2
-
39
80
IF = 1 A, di/dt = 100 A/μs
N-Ch 1
-
17
35
IF = 1 A, di/dt = 100 A/μs
N-Ch 2
-
46
95
IF = 1 A, di/dt = 100 A/μs
N-Ch 1
-
14
-
IF = 1 A, di/dt = 100 A/μs
N-Ch 2
-
23
-
IF = 1 A, di/dt = 100 A/μs
N-Ch 1
-
14
-
IF = 1 A, di/dt = 100 A/μs
N-Ch 2
-
16
-
IF = 1 A, di/dt = 100 A/μs
N-Ch 1
-
-1.1
-
IF = 1 A, di/dt = 100 A/μs
N-Ch 2
-
-2.1
-
A
V
ns
nC
ns
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-0037-Rev. B, 21-Jan-2019
Document Number: 77836
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ208EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
10000
TC = 25 °C
1st line
2nd line
2nd line
ID - Drain Current (A)
1000
48
VGS = 3 V
32
100
16
0
2nd line
gfs - Transconductance (S)
VGS = 10 V thru 4 V
64
2
4
6
8
1000
60
TC = 125 °C
40
100
20
0
10
0
TC = -55 °C
80
10
0
10
12
24
36
48
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Output Characteristics
Transconductance
10 000
10000
10000
1st line
2nd line
45
30
100
TC = 25 °C
Ciss
1000
1000
Coss
1st line
2nd line
1000
2nd line
C - Capacitance (pF)
60
2nd line
ID - Drain Current (A)
60
Axis Title
Axis Title
75
TC = 125 °C
1st line
2nd line
80
100
100
Crss
15
TC = -55 °C
0
10
10
0
2
4
6
8
10
0
10
8
16
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Capacitance
Axis Title
Axis Title
VGS = 4.5 V
100
0.006
VGS = 10 V
0.000
10
16
32
48
64
80
10000
ID = 1 A,
VDS = 20 V
8
1000
6
1st line
2nd line
1000
0.018
2nd line
VGS - Gate-to-Source Voltage (V)
0.024
0.012
4
100
2
0
10
0
5
10
15
20
ID - Drain Current (A)
Qg - Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
S19-0037-Rev. B, 21-Jan-2019
40
10
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
32
VGS - Gate-to-Source Voltage (V)
0.030
0
24
25
Document Number: 77836
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ208EP
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Vishay Siliconix
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
0.05
TJ = 150 °C
1000
1
100
0.1
TJ = 25 °C
10000
0.04
1000
0.03
1st line
2nd line
10
2nd line
RDS(on) - On-Resistance (Ω)
10000
1st line
2nd line
2nd line
IS - Source Current (A)
100
0.02
TJ = 150 °C
100
0.01
TJ = 25 °C
0.01
0.00
10
0
0.3
0.6
0.9
1.2
10
1.5
0
2
4
10
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
1st line
2nd line
ID = 5 mA
-0.4
100
ID = 250 μA
-0.7
-1.0
0
25
50
75
10000
ID = 1 mA
54
1000
52
50
100
48
46
10
-50 -25
56
1st line
2nd line
1000
-0.1
2nd line
VDS - Drain-to-Source Voltage (V)
Axis Title
10000
0.2
100 125 150 175
10
-50 -25
0
25
50
75
100 125 150 175
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
Axis Title
Axis Title
2.0
100
10000
10000
ID = 6 A
100 μs
IDM limited
VGS = 10 V
1000
1st line
2nd line
1.4
VGS = 4.5 V
1.1
100
2nd line
ID - Drain Current (A)
1.7
10
10 ms
Limited by RDS(on)
100 ms, 1 s,
10 s, DC
a
100
0.1
BVDSS limited
TC = 25 °C,
single pulse
10
-50 -25
0
25
50
75
100 125 150 175
1 ms
1
0.8
0.5
1000
ID limited
1st line
2nd line
2nd line
VGS(th) - Variance (V)
8
VSD - Source-to-Drain Voltage (V)
0.5
2nd line
RDS(on) - On-Resistance (Normalized)
6
0.01
0.01
10
0.1
1
10
TJ - Junction Temperature (°C)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Safe Operating Area
100
Note
a. VGS > minimum VGS at which RDS(on) is specified
S19-0037-Rev. B, 21-Jan-2019
Document Number: 77836
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ208EP
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Vishay Siliconix
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
1
Duty cycle = 0.5
1000
0.2
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
0.1
0.1
0.05
100
0.02
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
Duty cycle = 0.5
1000
0.2
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
0.1
0.1
0.05
100
0.02
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the graph:
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
S19-0037-Rev. B, 21-Jan-2019
Document Number: 77836
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ208EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
150
10000
10000
1st line
2nd line
2nd line
ID - Drain Current (A)
1000
120
VGS = 3 V
80
100
40
0
2nd line
gfs - Transconductance (S)
VGS = 10 V thru 4 V
160
2
4
6
8
TC = -55 °C
1000
90
TC = 125 °C
60
100
30
0
10
0
TC = 25 °C
120
1st line
2nd line
200
10
10
0
14
28
42
56
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Output Characteristics
Transconductance
Axis Title
70
Axis Title
100
10 000
10000
10000
TC= 125 °C
40
TC = 25 °C
100
Ciss
1000
1000
1st line
2nd line
60
2nd line
C - Capacitance (pF)
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
80
Coss
100
100
20
Crss
TC = -55 °C
0
10
10
0
2
4
6
8
10
10
0
8
16
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Capacitance
Axis Title
Axis Title
VGS = 4.5 V
0.004
100
VGS = 10 V
0.002
0.000
10
40
60
80
100
10000
ID = 1 A,
VDS = 20 V
8
1000
6
1st line
2nd line
1000
0.006
2nd line
VGS - Gate-to-Source Voltage (V)
0.008
20
4
100
2
0
10
0
10
20
30
40
ID - Drain Current (A)
Qg - Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
S19-0037-Rev. B, 21-Jan-2019
40
10
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
32
VGS - Gate-to-Source Voltage (V)
0.010
0
24
50
Document Number: 77836
7
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ208EP
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Vishay Siliconix
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
0.025
1000
1
100
0.1
TJ = 25 °C
10000
0.020
1000
0.015
1st line
2nd line
TJ = 150 °C
10
2nd line
RDS(on) - On-Resistance (Ω)
10000
1st line
2nd line
2nd line
IS - Source Current (A)
100
0.010
100
TJ = 150 °C
0.005
TJ = 25 °C
0.01
0.000
10
0
0.3
0.6
0.9
1.2
10
1.5
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
0.5
52
10000
10000
ID = 5 mA
-0.4
100
ID = 250 μA
-1.0
0
25
50
75
46
100
44
42
10
-50 -25
1000
48
100 125 150 175
10
-50 -25
0
25
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
Axis Title
1000
10000
ID = 10 A
VGS = 10 V
10000
1000
1.4
VGS = 4.5 V
1.1
100
0.8
2nd line
ID - Drain Current (A)
100
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
100 125 150 175
TJ - Junction Temperature (°C)
Axis Title
IDM limited
0.5
10
0
25
50
75
100 125 150 175
100 μs
1000
10
1
0.1
-50 -25
75
TJ - Junction Temperature (°C)
2.0
1.7
50
0.01
0.01
ID limited
1 ms
10 ms
Limited by RDS(on) a
100 ms, 1 s,
10 s, DC
100
1st line
2nd line
-0.7
50
1st line
2nd line
1000
-0.1
1st line
2nd line
2nd line
VGS(th) - Variance (V)
0.2
2nd line
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
BVDSS limited
TC = 25 °C,
single pulse
10
0.1
1
10
TJ - Junction Temperature (°C)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Safe Operating Area
100
Note
a. VGS > minimum VGS at which RDS(on) is specified
S19-0037-Rev. B, 21-Jan-2019
Document Number: 77836
8
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ208EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
1
Duty cycle = 0.5
1000
0.2
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
0.1
0.1
0.05
100
0.02
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
Duty cycle = 0.5
1000
0.2
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
0.1
100
0.05
0.02
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the graph:
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77836.
S19-0037-Rev. B, 21-Jan-2019
Document Number: 77836
9
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Assymetric Case Outline
b2
D5
K1
D4
D3
D2
A1
b
b1
e
D1
θ
b3
K2
0.25 gauge line
D
PIN 1
PIN 1
DIM.
A
A1
b
b1
b2
b3
c
D
D1
D2
D3
D4
D5
e
E
E1
E2
E3
F
L
L1
K
K1
K2
W
W1
W2
W3
W4
θ
DWG: 6009
MIN.
1.00
0.00
0.33
0.44
4.80
0.04
0.20
5.00
4.80
3.63
0.81
1.98
1.47
1.20
6.05
4.27
2.75
1.89
0.05
0.62
0.92
0.41
0.64
0.54
0.13
0.31
2.72
2.86
0.41
5°
MILLIMETERS
NOM.
1.07
0.06
0.41
0.51
4.90
0.12
0.25
5.13
4.90
3.73
0.91
2.08
1.57
1.27
6.15
4.37
2.85
1.99
0.12
0.72
1.07
0.51
0.74
0.64
0.23
0.41
2.82
2.96
0.51
10°
MAX.
1.14
0.13
0.48
0.58
5.00
0.20
0.30
5.25
5.00
3.83
1.01
2.18
1.67
1.34
6.25
4.47
2.95
2.09
0.19
0.82
1.22
0.61
0.84
0.74
0.33
0.51
2.92
3.06
0.61
12°
MIN.
0.039
0.000
0.013
0.017
0.189
0.002
0.008
0.197
0.189
0.143
0.032
0.078
0.058
0.047
0.238
0.168
0.108
0.074
0.002
0.024
0.036
0.016
0.025
0.021
0.005
0.012
0.107
0.113
0.016
5°
INCHES
NOM.
0.042
0.003
0.016
0.020
0.193
0.005
0.010
0.202
0.193
0.147
0.036
0.082
0.062
0.050
0.242
0.172
0.112
0.078
0.005
0.028
0.042
0.020
0.029
0.025
0.009
0.016
0.111
0.117
0.020
10°
MAX.
0.045
0.005
0.019
0.023
0.197
0.008
0.012
0.207
0.197
0.151
0.040
0.086
0.066
0.053
0.246
0.176
0.116
0.082
0.007
0.032
0.048
0.024
0.033
0.029
0.013
0.020
0.115
0.120
0.024
12°
Note
• Millimeters will govern
Document Number: 62714
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
C14-0057-Rev. D, 07-Apr-14
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PADs FOR PowerPAK® SO-8L DUAL ASYMMETRIC
Recommended Minimum Pads
Dimensions in mm [inches]
Revision: 07-Mar-13
1
Document Number: 64477
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Revision: 09-Jul-2021
1
Document Number: 91000
