SQJ264EP-T1_GE3

SQJ264EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs FEATURES PowerPAK® SO-8L Dual Asymmetric • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D1 • Optimized for synchronous buck applications D2 15 6. m m 13 5. 1 m m 4 G2 Bottom View Top View 2 3 G1 S2 1 S1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 D2 PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2 60 60 0.0200 0.0086 VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) 20 Configuration G2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET 54 Dual Package G1 PowerPAK SO-8L asymmetric ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 Drain-source voltage VDS 60 60 Gate-source voltage VGS Continuous drain current TC = 25 °C TC = 125 °C Continuous source current (diode conduction) Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID ± 20 20 a 54 15 31 IS 20 a 44 IDM 65 90 IAS 19 31 EAS 18 48 27 48 9 16 PD TJ, Tstg -55 to +175 Soldering recommendations (peak temperature) d, e UNIT V A mJ W °C 260 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL N-CHANNEL 1 N-CHANNEL 2 RthJA 85 85 RthJC 5.5 3.1 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S19-1108-Rev. A, 30-Dec-2019 Document Number: 77239 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ264EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage VDS VGS(th) IGSS VGS = 0 V, ID = 250 μA N-Ch 1 60 - - VGS = 0 V, ID = 250 μA N-Ch 2 60 - - VDS = VGS, ID = 250 μA N-Ch 1 2.5 3.0 3.5 VDS = VGS, ID = 250 μA N-Ch 2 2.5 3.0 3.5 N-Ch 1 - - ± 100 N-Ch 2 - - ± 100 VDS = 60 V N-Ch 1 - - 1 VDS = 0 V, VGS = ± 20 V VGS = 0 V Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b IDSS ID(on) RDS(on) gfs VGS = 0 V VDS = 60 V N-Ch 2 - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C N-Ch 1 - - 50 VGS = 0 V VDS = 60 V, TJ = 125 °C N-Ch 2 - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C N-Ch 1 - - 250 VGS = 0 V VDS = 60 V, TJ = 175 °C N-Ch 2 - - 250 VGS = 10 V VDS ≥ 5 V N-Ch 1 15 - - VGS = 10 V VDS ≥ 5 V N-Ch 2 30 - - VGS = 10 V ID = 6 A N-Ch 1 - 0.0165 0.0200 0.0071 0.0086 VGS = 10 V ID = 10 A N-Ch 2 - VGS = 10 V ID = 6 A, TJ = 125 °C N-Ch 1 - - 0.0320 VGS = 10 V ID = 10 A, TJ = 125 °C N-Ch 2 - - 0.0135 VGS = 10 V ID = 6 A, TJ = 175 °C N-Ch 1 - - 0.0390 VGS = 10 V ID = 10 A, TJ = 175 °C N-Ch 2 - - 0.0167 VDS = 10 V, ID = 6 A N-Ch 1 - 24 - VDS = 10 V, ID = 10 A N-Ch 2 - 98 - V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance S19-1108-Rev. A, 30-Dec-2019 Rg VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 687 1000 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 1490 2100 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 313 500 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 777 1100 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 10 15 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 21 30 VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 9.2 16 VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 19.2 32 VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 3.2 - VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 6.3 - VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 0.8 - VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 1.5 - N-Ch 1 0.35 0.74 1.20 N-Ch 2 0.20 0.42 0.65 f = 1 MHz pF nC Ω Document Number: 77239 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ264EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamic b Turn-on delay time c Rise time c Turn-off delay time c Fall time c td(on) tr td(off) tf VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 11 18 VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 12 25 VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 2 5 VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 3 5 VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 16 30 VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 20 40 VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 8 15 VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 11 18 N-Ch 1 - - 65 N-Ch 2 - - 90 ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time Body diode peak reverse recovery current tb IRM(REC) IF = 6 A, VGS = 0 V N-Ch 1 - 0.82 1.2 IF = 10 A, VGS = 0 V N-Ch 2 - 0.80 1.2 IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 22 45 IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 41 85 IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 15 30 IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 36 75 IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 12 - IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 19 - IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 10 - IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 22 - IF = 4 A, di/dt = 100 A/μs N-Ch 1 - -1.3 - IF = 5 A, di/dt = 100 A/μs N-Ch 2 - -1.6 - A V ns nC ns A Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-1108-Rev. A, 30-Dec-2019 Document Number: 77239 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ264EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 1st line 2nd line 2nd line ID - Drain Current (A) 1000 48 VGS = 6 V 32 100 VGS = 5 V 16 0.08 1000 0.06 1st line 2nd line VGS = 10 V thru 7 V 64 10000 0.10 2nd line RDS(on) - On-Resistance (Ω) 80 0.04 100 VGS = 10 V 0.02 VGS = 4 V 10 0 0 2 4 6 8 10 0.00 0 10 10 20 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Output Characteristics Transconductance 10000 10 000 10000 1st line 2nd line TC = 25 °C 100 Ciss 1000 1000 Coss 1st line 2nd line 1000 42 2nd line C - Capacitance (pF) 56 28 50 Axis Title Axis Title 70 2nd line ID - Drain Current (A) 40 100 100 Crss 10 14 TC = 125 °C TC = -55 °C 10 0 0 2 4 6 8 10 1 0 10 12 48 VDS - Drain-to-Source Voltage (V) Transfer Characteristics Capacitance 10000 10000 10 ID = 1.5 A, VDS = 30 V TC = 25 °C 1000 1st line 2nd line 30 TC = 125 °C 20 100 10 10 0 6 9 12 15 8 1000 6 1st line 2nd line 40 2nd line VGS - Gate-to-Source Voltage (V) TC = -55 °C 3 4 100 2 10 0 0 3 6 9 12 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge S19-1108-Rev. A, 30-Dec-2019 60 Axis Title Axis Title 2nd line gfs - Transconductance (S) 36 VGS - Gate-to-Source Voltage (V) 50 0 24 15 Document Number: 77239 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ264EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 VGS = 10 V 1.1 100 0.8 0.08 1000 0.06 1st line 2nd line 1000 1.4 2nd line RDS(on) - On-Resistance (Ω) ID = 4 A 1.7 10000 0.10 1st line 2nd line 0.04 TJ = 150 °C 0.02 TJ = 25 °C 10 0.5 -50 -25 0 25 50 10 0.00 75 100 125 150 175 0 2 4 8 10 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 10000 0.5 ID = 1 mA 0.1 70 100 68 1000 -0.3 ID = 5 mA -0.7 100 -1.1 10 66 -50 -25 0 25 50 1st line 2nd line 1000 72 2nd line VGS(th) - Variance (V) 74 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 6 TJ - Junction Temperature (°C) 76 ID = 250 μA 10 -1.5 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 100 100 10000 TJ = 150 °C 10000 1000 1 TJ = 25 °C 100 0.1 2nd line ID - Drain Current (A) IDM limited 10 1st line 2nd line 2nd line IS - Source Current (A) 100 10 100 μs 1000 ID limited 1 ms 1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 10 ms 100 ms, 1 s, 10 s, DC Limited by RDS(on) a 100 BVDSS limited 0.1 TC = 25 °C, single pulse 10 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.01 10 0.1 1 10 VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Safe Operating Area S19-1108-Rev. A, 30-Dec-2019 100 Document Number: 77239 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ264EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 1 Duty cycle = 0.5 0.2 Notes 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.05 t1 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA (t) 4. Surface mounted 0.02 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 Duty cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 100 0.05 Single pulse 0.02 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions S19-1108-Rev. A, 30-Dec-2019 Document Number: 77239 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ264EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.025 10000 100 1st line 2nd line 2nd line ID - Drain Current (A) 1000 60 40 100 VGS = 4 V 20 10 0 0 2 4 6 8 0.020 1000 0.015 1st line 2nd line VGS = 5 V 80 2nd line RDS(on) - On-Resistance (Ω) VGS = 10 V thru 6 V 0.010 VGS = 10 V 0.005 10 0 10 0 16 32 48 64 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Output Characteristics Transconductance 80 Axis Title Axis Title 10000 80 10000 10 000 64 TC = 25 °C 32 100 1000 1000 Coss 1st line 2nd line 1000 48 2nd line C - Capacitance (pF) Ciss 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 100 16 TC = 125 °C Crss TC = -55 °C 10 0 0 2 4 6 8 10 10 0 10 12 48 VDS - Drain-to-Source Voltage (V) Transfer Characteristics Capacitance Axis Title 1st line 2nd line TC = 125 °C 60 100 30 10 0 6 9 12 15 ID = 3 A, VDS = 30 V 8 1000 6 1st line 2nd line 1000 2nd line VGS - Gate-to-Source Voltage (V) TC = 25 °C 90 10000 10 120 3 4 100 2 10 0 0 6 12 18 24 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge S19-1108-Rev. A, 30-Dec-2019 60 Axis Title 10000 TC = -55 °C 2nd line gfs - Transconductance (S) 36 VGS - Gate-to-Source Voltage (V) 150 0 24 30 Document Number: 77239 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ264EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 VGS = 10 V 1.1 100 0.8 0.04 1000 0.03 1st line 2nd line 1000 1.4 2nd line RDS(on) - On-Resistance (Ω) ID = 8 A 1.7 10000 0.05 1st line 2nd line 0.02 TJ = 150 °C 0.01 TJ = 25 °C 10 0.5 -50 -25 0 25 50 10 0.00 75 100 125 150 175 0 2 4 6 8 10 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 73 10000 0.5 ID = 1 mA 0.1 1000 69 67 100 2nd line VGS(th) - Variance (V) 71 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 100 65 1000 -0.3 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 ID = 5 mA -0.7 100 ID = 250 μA -1.1 10 63 -50 -25 0 25 50 10 -1.5 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 100 10000 1000 10000 100 1 TJ = 25 °C 100 0.1 100 μs 1000 10 1 ms 1 1st line 2nd line 1000 2nd line ID - Drain Current (A) TJ = 150 °C 10 1st line 2nd line 2nd line IS - Source Current (A) IDM limited 10 ms 100100 ms, 1 s, 10 s, DC Limited by RDS(on) a BVDSS limited 0.1 TC = 25 °C, single pulse 10 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.01 10 0.1 1 10 VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Safe Operating Area S19-1108-Rev. A, 30-Dec-2019 100 Document Number: 77239 8 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ264EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 1 Duty cycle = 0.5 0.2 Notes 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.05 t1 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA (t) 4. Surface mounted 0.02 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 1000 0.2 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75486. S19-1108-Rev. A, 30-Dec-2019 Document Number: 77239 9 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Assymetric Case Outline b2 D5 K1 D4 D3 D2 A1 b b1 e D1 θ b3 K2 0.25 gauge line D PIN 1 PIN 1 DIM. A A1 b b1 b2 b3 c D D1 D2 D3 D4 D5 e E E1 E2 E3 F L L1 K K1 K2 W W1 W2 W3 W4 θ DWG: 6009 MIN. 1.00 0.00 0.33 0.44 4.80 0.04 0.20 5.00 4.80 3.63 0.81 1.98 1.47 1.20 6.05 4.27 2.75 1.89 0.05 0.62 0.92 0.41 0.64 0.54 0.13 0.31 2.72 2.86 0.41 5° MILLIMETERS NOM. 1.07 0.06 0.41 0.51 4.90 0.12 0.25 5.13 4.90 3.73 0.91 2.08 1.57 1.27 6.15 4.37 2.85 1.99 0.12 0.72 1.07 0.51 0.74 0.64 0.23 0.41 2.82 2.96 0.51 10° MAX. 1.14 0.13 0.48 0.58 5.00 0.20 0.30 5.25 5.00 3.83 1.01 2.18 1.67 1.34 6.25 4.47 2.95 2.09 0.19 0.82 1.22 0.61 0.84 0.74 0.33 0.51 2.92 3.06 0.61 12° MIN. 0.039 0.000 0.013 0.017 0.189 0.002 0.008 0.197 0.189 0.143 0.032 0.078 0.058 0.047 0.238 0.168 0.108 0.074 0.002 0.024 0.036 0.016 0.025 0.021 0.005 0.012 0.107 0.113 0.016 5° INCHES NOM. 0.042 0.003 0.016 0.020 0.193 0.005 0.010 0.202 0.193 0.147 0.036 0.082 0.062 0.050 0.242 0.172 0.112 0.078 0.005 0.028 0.042 0.020 0.029 0.025 0.009 0.016 0.111 0.117 0.020 10° MAX. 0.045 0.005 0.019 0.023 0.197 0.008 0.012 0.207 0.197 0.151 0.040 0.086 0.066 0.053 0.246 0.176 0.116 0.082 0.007 0.032 0.048 0.024 0.033 0.029 0.013 0.020 0.115 0.120 0.024 12° Note • Millimeters will govern Document Number: 62714 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 C14-0057-Rev. D, 07-Apr-14 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PADs FOR PowerPAK® SO-8L DUAL ASYMMETRIC Recommended Minimum Pads Dimensions in mm [inches] Revision: 07-Mar-13 1 Document Number: 64477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000