SQJ402EP-T1_GE3

SQJ402EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Single • • • • D 6. 15 m m m 1 3 .1 m 4 G 5 Top View 3 S 2 S 1 S TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View PRODUCT SUMMARY VDS (V) G 100 RDS(on) (Ω) at VGS = 10 V 0.0110 RDS(on) (Ω) at VGS = 4.5 V 0.0140 ID (A) Configuration 32 S Single N-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and halogen-free SQJ402EP (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Currenta TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current L = 0.1 mH Single Pulse Avalanche Energy TC = 25 °C Maximum Power Dissipationb TC = 125 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak ID 32 32 IDM 75 IAS 31 EAS 48 TJ, Tstg Temperature)e, f V 32 IS PD UNIT 83 27 - 55 to + 175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) SYMBOL PCB Mountc LIMIT RthJA 65 RthJC 1.8 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR-4 material) d. Parametric verification ongoing e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S22-0224-Rev. C, 07-Mar-2022 Document Number: 67997 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ402EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs - - ± 100 VGS = 0 V VDS = 100 V - - 1 VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 100 V, TJ = 175 °C - - 150 VGS = 10 V VDS ≥ 5 V 30 - - VGS = 10 V ID = 10.7 A - 0.0090 0.0110 VGS = 10 V ID = 10.7 A, TJ = 125 °C - - 0.0170 VGS = 10 V ID = 10.7 A, TJ = 175 °C - - 0.0210 VGS = 4.5 V ID = 9.5 A - 0.0115 0.0140 - 54 - - 1829 2286 VDS = 15 V, ID = 10.7 A V nA μA A Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Rg VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 50 V, ID = 10 A f = 1 MHz td(on) tr td(off) VDD = 50 V, RL = 5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf - 722 903 - 62 78 - 34 51 - 6 - - 13 - 0.65 1.39 2 - 10 15 - 10 15 - 27 40 - 7 11 pF nC Ω ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 7 A, VGS = 0 V - - 75 A - 0.77 1.2 V Notes g. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. h. Guaranteed by design, not subject to production testing. i. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0224-Rev. C, 07-Mar-2022 Document Number: 67997 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ402EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 80 80 VGS = 10 V thru 7 V 64 64 ID - Drain Current (A) ID - Drain Current (A) VGS = 4 V 48 32 48 TC = 25 °C 32 16 16 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 3 6 9 12 0 15 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 10.0 100 TC = - 55 °C TC = 25 °C 8.0 ID - Drain Current (A) gfs - Transconductance (S) 80 60 TC = 125 °C 40 20 6.0 4.0 TC = 25 °C 2.0 TC = 125 °C TC = - 55 °C 0 0.0 0 5 10 15 ID - Drain Current (A) 20 25 0 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transconductance Transfer Characteristics 4000 0.025 3200 0.020 RDS(on) - On-Resistance (Ω) C - Capacitance (pF) 1 2400 Ciss 1600 Coss 800 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 Crss 0 0.000 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance S22-0224-Rev. C, 07-Mar-2022 100 0 16 32 48 64 80 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 67997 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ402EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 10 10 VDS = 50 V IS - Source Current (A) VGS - Gate-to-Source Voltage (V) ID = 10 A 8 6 4 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 2 0.001 0 0 8 16 24 32 0.0 40 0.2 Qg - Total Gate Charge (nC) 0.5 2.5 VGS = 10 V ID = 20 A 0.1 ID = 5 mA 2.0 VGS(th) Variance (V) RDS(on) - On-Resistance (Normalized) 1.2 Source Drain Diode Forward Voltage Gate Charge 1.5 VGS = 4.5 V - 0.3 ID = 250 μA - 0.7 1.0 - 1.1 - 1.5 0.5 - 50 - 25 0 25 50 75 100 125 150 - 50 - 25 175 0 25 50 75 100 TJ - Junction Temperature (°C) TJ - Temperature (°C) On-Resistance vs. Junction Temperature Threshold Voltage 125 150 175 125 150 175 125 VDS - Drain-to-Source Voltage (V) 0.05 0.04 RDS(on) - On-Resistance (Ω) 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0.03 TJ = 25 °C 0.02 0.01 ID = 1 mA 120 115 110 105 TJ = 150 °C 100 0.00 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage S22-0224-Rev. C, 07-Mar-2022 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 67997 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ402EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited 100 μs ID - Drain Current (A) 10 ID Limited 1 ms 10 ms 1 100 ms 1 s, 10 s, DC Limited by RDS(on)* 0.1 BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1000 Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 Notes: PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S22-0224-Rev. C, 07-Mar-2022 Document Number: 67997 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ402EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.02 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67997. S22-0224-Rev. C, 07-Mar-2022 Document Number: 67997 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 W E1 E E2 W2 W3 W1 b2 D2 b b1 L1 L L1 A1 θ e D1 b3 b4 0.25 gauge line Backside view (single) D Topside view (single) b2 E1 E E2 W2 W3 W1 F K D3 D3 L1 D2 b b1 e b3 D1 b4 Backside view (dual) D C A Topside view (dual) Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Nov-2021 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 θ 2.96 0° - 0.117 10° 0° - 10° ECN: C21-1498-Rev. C, 01-Nov-2021 DWG: 6044 Note • Millimeters will govern Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Nov-2021 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000