SQJ420EP-T1_GE3

SQJ420EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Single • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D 6. 15 m m m 1 3 .1 m 4 G 5 Top View 3 S 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V 0.0100 RDS(on) (Ω) at VGS = 4.5 V 0.0120 ID (A) Configuration G 40 N-Channel MOSFET 30 S Single ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and halogen-free SQJ420EP (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 30 IS 30 110 IAS 28 EAS 39 TJ, Tstg Soldering recommendations (peak temperature) d, e V 26.8 IDM PD UNIT 45 15 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction to ambient Junction to case (drain) PCB mount c SYMBOL LIMIT RthJA 70 RthJC 3.3 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S22-0060-Rev. B, 24-Jan-2022 Document Number: 75546 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ420EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 Zero gate voltage drain current IDSS Gate-source threshold voltage On-state drain current a Drain-source on-state resistance a Forward transconductance b ID(on) RDS(on) gfs VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 VGS = 10 V VDS ≥ 5 V 30 - - VGS = 10 V ID = 9.7 A - 0.0082 0.0100 VGS = 4.5 V ID = 8 A - 0.0098 0.0120 VGS = 10 V ID = 9.7 A, TJ = 125 °C - - 0.0166 VGS = 10 V ID = 9.7 A, TJ = 175 °C - - 0.0204 - 68 - - 1427 1860 - 193 260 - 71 95 VDS = 15 V, ID = 9.7 A V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay Rg Fall time c VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 11.3 A f = 1 MHz td(on) tr time c VGS = 0 V td(off) VDD = 20 V, RL = 13.3 Ω ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics ISM Forward voltage VSD trr - 27 41 - 4.6 - - 4.6 - 0.65 1.36 2.10 - 10 15 - 4 10 - 25 40 - 5 10 - - 110 - 0.79 1.2 V - 28 60 ns - 25 50 nC - 18 - IF = 7 A, VGS = 0 Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - 10 - IRM(REC) - -1.8 - Body diode peak reverse recovery current nC Ω ns b Pulsed current a Body diode reverse recovery time pF IF = 5 A, di/dt = 100 A/μs A ns A Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0060-Rev. B, 24-Jan-2022 Document Number: 75546 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ420EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 80 10000 10000 VGS = 10 V thru 4 V 60 VGS = 3 V 40 100 20 0 4 6 8 32 TC = 25 °C 16 TC = -55 °C 0 10 2 4 Output Characteristics Transfer Characteristics Axis Title 0.015 VGS = 4.5 V 0.010 100 VGS = 10 V 10000 1600 Ciss 1000 1200 1st line 2nd line 1000 2nd line C - Capacitance (pF) 0.020 800 100 Crss 400 0.005 0.000 32 48 64 Coss 0 10 16 10 0 80 8 16 32 VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance 2.1 ID = 11.3 A VDS = 20 V 1000 1st line 2nd line 6 4 100 2 0 10 12 18 24 30 2nd line RDS(on) - On-Resistance (Normalized) 10000 6 40 Axis Title Axis Title 0 24 ID - Drain Current (A) 2nd line 10 8 10 2000 10000 1st line 2nd line 2nd line RDS(on) - On-Resistance () 8 VGS - Gate-to-Source Voltage (V) 2nd line Axis Title 2nd line VGS - Gate-to-Source Voltage (V) 10 6 VDS - Drain-to-Source Voltage (V) 2nd line 0.025 0 100 1.8 10000 ID = 10 A VGS = 10 V 1000 1.5 VGS = 4.5 V 1.2 100 0.9 0.6 10 -50 -25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S22-0060-Rev. B, 24-Jan-2022 1st line 2nd line 2 1000 48 0 10 0 TC = 125 °C 1st line 2nd line 1000 2nd line ID - Drain Current (A) 64 1st line 2nd line 2nd line ID - Drain Current (A) 80 Document Number: 75546 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ420EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 0.05 10000 2nd line RDS(on) - On-Resistance () TJ = 150 °C 1000 1 1st line 2nd line 2nd line IS - Source Current (A) 10 0.1 TJ = 25 °C 100 0.01 10000 0.04 1000 0.03 0.02 1st line 2nd line 100 TJ = 150 °C 100 0.01 TJ = 25 °C 0.001 0.00 10 0.2 0.4 0.6 0.8 1.0 10 1.2 0 2 4 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source Drain Diode Forward Voltage On-Resistance vs. Gate-to Source Voltage Axis Title Axis Title 0.5 150 10000 1000 1st line 2nd line ID = 5 mA -0.3 ID = 250 μA -0.7 2nd line gfs - Transconductance (S) 0.1 2nd line VGS(th) Variance (V) 6 100 -1.1 -1.5 0 25 50 TC = -55 °C 120 TC = 25 °C 1000 90 60 TC = 125 °C 100 30 0 10 -50 -25 10000 1st line 2nd line 0 10 0 75 100 125 150 175 5 10 15 TJ - Temperature (°C) 2nd line ID - Drain Current (A) 2nd line Threshold Voltage Transconductance 20 25 Axis Title 10000 ID = 1mA 50 1000 47 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 53 44 100 41 38 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature S22-0060-Rev. B, 24-Jan-2022 Document Number: 75546 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ420EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 1000 10000 IDM limited 100 µs 1000 10 ID limited 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 Limited by RDS(on) (1) 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S22-0060-Rev. B, 24-Jan-2022 Document Number: 75546 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ420EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75546. S22-0060-Rev. B, 24-Jan-2022 Document Number: 75546 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 W E1 E E2 W2 W3 W1 b2 D2 b b1 L1 L L1 A1 θ e D1 b3 b4 0.25 gauge line Backside view (single) D Topside view (single) b2 E3 E1 E E2 W2 W3 W1 F K D3 D3 L1 D2 b b1 e b3 D1 b4 Backside view (dual) D C A Topside view (dual) Revision: 25-Sep-2023 Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 E3 6.05 6.22 6.40 0.238 0.245 0.252 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117  0° - 10° 0° - 10° ECN: C23-1026-Rev. D, 25-Sep-2023 DWG: 6044 Note • Millimeters will govern Revision: 25-Sep-2023 Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000