SQJ444EP
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L Single
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
6.
15
m
m
m
1
3
.1
m
4
G
5
Top View
3
S
2
S
1
S
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Bottom View
PRODUCT SUMMARY
VDS (V)
40
RDS(on) (Ω) at VGS = 10 V
0.0032
RDS(on) (Ω) at VGS = 4.5 V
0.0043
ID (A)
60
Configuration
G
N-Channel MOSFET
Single
S
ORDERING INFORMATION
Package
PowerPAK SO-8L
SQJ444EP
(for detailed order number please see www.vishay.com/doc?79771)
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current a
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
SYMBOL
VDS
VGS
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
LIMIT
40
± 20
60
60
60
150
25
31.2
68
22
-55 to +175
260
UNIT
SYMBOL
LIMIT
UNIT
RthJA
68
RthJC
2.2
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction to ambient
Junction to case (drain)
PCB mount c
°C/W
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square Pcb (Fr4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S22-0060-Rev. B, 24-Jan-2022
Document Number: 75858
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ444EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS
VGS = 0, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
Zero gate voltage drain current
IDSS
Gate-source threshold voltage
On-state drain
current a
Drain-source on-state resistance a
Forward
transconductance b
ID(on)
RDS(on)
gfs
VGS = 0 V
VDS = 40 V
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS ≥ 5 V
30
-
-
VGS = 10 V
ID = 10 A
-
0.0026
0.0032
VGS = 4.5 V
ID = 8 A
-
0.0034
0.0043
VGS = 10 V
ID = 10 A, TJ = 125 °C
-
-
0.0048
VGS = 10 V
ID = 10 A, TJ = 175 °C
-
-
0.0057
-
80
-
-
3700
5000
-
2310
3050
-
160
220
VDS = 15 V, ID = 10 A
V
nA
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay
Rg
Fall time c
Source-Drain Diode Ratings and
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 20 V, ID = 5 A
f = 1 MHz
td(on)
tr
time c
VGS = 0 V
td(off)
VDD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
tf
pF
-
51
80
-
9
-
-
7
-
0.20
0.44
0.70
-
11
20
-
19
30
-
30
50
-
21
35
-
-
150
A
-
0.8
1.2
V
nC
Ω
ns
Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = 15 A, VGS = 0
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0060-Rev. B, 24-Jan-2022
Document Number: 75858
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ444EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
150
VGS = 10 V thru 4 V
10000
80
1st line
2nd line
60
100
VGS = 3V
30
1000
60
1st line
2nd line
1000
90
2nd line
ID - Drain Current (A)
120
TC = 25 °C
40
100
20
TC = -55 °C
TC = 125 °C
0
0
10
0
2
4
6
8
10
0
10
1
2
4
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
5
Axis Title
0.010
8000
10000
0.008
10000
1000
0.006
VGS = 4.5 V
0.004
100
0.002
2nd line
C - Capacitance (pF)
6400
1st line
2nd line
2nd line
RDS(on) - On-Resistance ( )
3
VGS = 10 V
1000
4800
1st line
2nd line
2nd line
ID - Drain Current (A)
100
10000
Ciss
3200
Coss
100
1600
Crss
0.000
0
10
20
40
60
80
100
10
0
8
16
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
2.0
8
ID = 5 A
VDS = 20 V
1000
1st line
2nd line
6
4
100
2
0
10
24
36
48
60
2nd line
RDS(on) - On-Resistance (Normalized)
10000
12
40
Axis Title
Axis Title
2nd line
VGS - Gate-to-Source Voltage (V)
32
ID - Drain Current (A)
2nd line
10
0
24
10000
ID = 10 A
VGS = 10 V
1.7
1000
1.4
VGS = 4.5 V
1.1
100
0.8
0.5
10
-50 -25
0
25
50
75 100 125 150 175
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S22-0060-Rev. B, 24-Jan-2022
1st line
2nd line
0
Document Number: 75858
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ444EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
0.010
10000
2nd line
RDS(on) - On-Resistance (Ω)
TJ = 25 °C
1000
1
1st line
2nd line
2nd line
IS - Source Current (A)
10
TJ = 150 °C
0.1
100
0.01
0.001
0.2
0.4
0.6
0.8
1.0
0.008
1000
0.006
0.004
100
TJ = 150 °C
0.002
TJ = 25 °C
0.000
10
0
10000
1st line
2nd line
100
1.2
0
2
4
10
6
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to Source Voltage
Axis Title
Axis Title
0.50
200
10000
10000
TC = -55 °C
ID = 5 mA
-0.52
100
-0.86
ID = 250 μA
-1.20
160
TC = 25 °C
0
25
50
TC = 125 °C
80
100
40
0
10
-50 -25
1000
120
1st line
2nd line
2nd line
gfs - Transconductance (S)
1000
-0.18
1st line
2nd line
2nd line
VGS(th) Variance (V)
0.16
10
0
75 100 125 150 175
5
10
15
TJ - Temperature (°C)
2nd line
ID - Drain Current (A)
2nd line
Threshold Voltage
Transconductance
20
25
Axis Title
10000
ID = 1 mA
52
1000
49
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
55
46
100
43
40
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S22-0060-Rev. B, 24-Jan-2022
Document Number: 75858
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ444EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
1000
10000
IDM limited
100 µs
1000
1 ms
ID limited
10
10 ms
100 ms, 1 s, 10 s, DC
1
Limited by RDS(on)
1st line
2nd line
2nd line
ID - Drain Current (A)
100
(1)
100
0.1
TC = 25 °C
Single pulse
0.01
0.01
(1)
0.1
BVDSS limited
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 68 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S22-0060-Rev. B, 24-Jan-2022
Document Number: 75858
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ444EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75858.
S22-0060-Rev. B, 24-Jan-2022
Document Number: 75858
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 2
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L1
L
L1
A1
θ
e
D1
b3
b4
0.25 gauge line
Backside view (single)
D
Topside view (single)
b2
E3
E1
E
E2
W2
W3
W1
F
K
D3
D3
L1
D2
b
b1
e
b3
D1
b4
Backside view (dual)
D
C
A
Topside view (dual)
Revision: 25-Sep-2023
Document Number: 66934
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
2.75
2.85
2.95
0.108
0.112
0.116
E3
6.05
6.22
6.40
0.238
0.245
0.252
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96
0.117
0°
-
10°
0°
-
10°
ECN: C23-1026-Rev. D, 25-Sep-2023
DWG: 6044
Note
• Millimeters will govern
Revision: 25-Sep-2023
Document Number: 66934
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
1
Document Number: 91000
