SQJ454EP
www.vishay.com
Vishay Siliconix
Automotive N-Channel 200 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L Single
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
6.
15
m
m
m
13
m
4
G
5.
1
Top View
3
S
2
S
1
S
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Bottom View
PRODUCT SUMMARY
VDS (V)
200
RDS(on) (Ω) at VGS = 10 V
0.145
RDS(on) (Ω) at VGS = 4.5 V
0.150
ID (A)
G
13
Configuration
N-Channel MOSFET
Single
S
ORDERING INFORMATION
Package
PowerPAK SO-8L
Lead (Pb)-free and halogen-free
SQJ454EP
(for detailed order number please see www.vishay.com/doc?79771)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
200
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
TC = 125 °C
ID
13
IS
60
Pulsed drain current b
IDM
30
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
IAS
15
EAS
11.2
PD
TJ, Tstg
Soldering recommendations (peak temperature) d, e
V
7.5
Continuous source current (diode conduction) a
Single pulse avalanche current
UNIT
68
22
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Junction-to-ambient
Junction-to-case (drain)
PCB
mount c
LIMIT
RthJA
68
RthJC
2.2
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S22-0224-Rev. B, 07-Mar-2022
Document Number: 75925
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ454EP
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS
VGS = 0, ID = 250 μA
200
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
Zero gate voltage drain current
IDSS
Gate-source threshold voltage
On-state drain
current a
Drain-source on-state resistance a
Forward
transconductance b
ID(on)
RDS(on)
gfs
VGS = 0 V
VDS = 200 V
-
-
1
VGS = 0 V
VDS = 200 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 200 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS ≥ 5 V
10
-
-
VGS = 10 V
ID = 7.5 A
-
0.118
0.145
VGS = 4.5 V
ID = 5 A
-
0.123
0.150
VGS = 10 V
ID = 7.5 A, TJ = 125 °C
-
-
0.298
VGS = 10 V
ID = 7.5 A, TJ = 175 °C
-
-
0.394
-
33
-
-
1990
2600
-
133
180
VDS = 15 V, ID = 7.5 A
V
nA
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
-
62
85
Total gate charge c
Qg
-
56
85
-
7
-
Gate-source
Gate-drain
charge c
charge c
Gate resistance
Turn-on delay
Qgs
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 100 V, ID = 2 A
Qgd
Rg
time c
VGS = 0 V
-
15
-
f = 1 MHz
0.20
0.45
0.80
VDD = 100 V, RL = 50 Ω
ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω
pF
nC
Ω
td(on)
-
14
25
Rise time c
tr
-
5
10
Turn-off delay time c
td(off)
-
33
55
-
8
15
-
-
30
A
-
0.83
1.2
V
Fall time c
tf
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
Forward voltage
ISM
VSD
IF = 7.5 A, VGS = 0
Body diode reverse recovery time
trr
-
86
175
ns
Body diode reverse recovery charge
Qrr
-
335
700
nC
Reverse recovery fall time
ta
-
64
-
Reverse recovery rise time
tb
-
22
-
IRM(REC)
-
-7.6
-
Body diode peak reverse recovery current
IF = 5 A, di/dt = 100 A/μs
ns
A
Notes
f. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
g. Guaranteed by design, not subject to production testing.
h. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0224-Rev. B, 07-Mar-2022
Document Number: 75925
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ454EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
45
30
10000
18
VGS = 3 V
100
9
0
2
4
6
8
TC = 125 °C
12
100
TC = 25 °C
6
TC = -55 °C
0
10
0
1000
18
1st line
2nd line
1000
VGS = 10 V thru 4 V
27
2nd line
ID - Drain Current (A)
24
1st line
2nd line
2nd line
ID - Drain Current (A)
36
10000
10
0
2
4
10
6
8
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
10
Axis Title
0.40
2300
10000
10000
0.32
1000
0.16
100
VGS = 10 V
0.08
1000
1380
1st line
2nd line
VGS = 4.5 V
0.24
2nd line
C - Capacitance (pF)
1840
1st line
2nd line
920
100
Crss
460
Coss
0.00
10
0
8
16
24
32
0
40
10
0
40
80
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
1000
6
4
100
2
0
10
30
45
60
75
2nd line
RDS(on) - On-Resistance (Normalized)
ID = 2 A
VDS = 100 V
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
2.9
10000
15
200
Axis Title
Axis Title
0
160
ID - Drain Current (A)
2nd line
10
8
120
10000
ID = 7.5 A
VGS = 10 V
2.4
1000
1.9
VGS = 4.5 V
1.4
100
0.9
0.4
10
-50 -25
0
25
50
75 100 125 150 175
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S22-0224-Rev. B, 07-Mar-2022
1st line
2nd line
2nd line
RDS(on) - On-Resistance ( )
Ciss
Document Number: 75925
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ454EP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
2nd line
RDS(on) - On-Resistance (Ω)
10
TJ = 150 °C
1000
1
1st line
2nd line
2nd line
IS - Source Current (A)
0.80
10000
0.1
100
TJ = 25 °C
0.01
0.001
0.2
0.4
0.6
0.8
1.0
0.64
1000
0.48
0.32
TJ = 150 °C
1.2
TJ = 25 °C
0
2
4
10
6
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to Source Voltage
Axis Title
Axis Title
75
10000
2nd line
gfs - Transconductance (S)
0.2
1000
1st line
2nd line
-0.1
ID = 5 mA
-0.4
100
-0.7
ID = 250 μA
-1.0
0
25
50
TC = -55 °C
TC = 25 °C
60
1000
45
30
TC = 125 °C
100
15
0
10
-50 -25
10000
1st line
2nd line
0.5
2nd line
VGS(th) Variance (V)
100
0.16
0.00
10
0
10000
1st line
2nd line
100
75 100 125 150 175
10
0
4
8
12
TJ - Temperature (°C)
2nd line
ID - Drain Current (A)
2nd line
Threshold Voltage
Transconductance
16
20
Axis Title
230
10000
ID = 1 mA
1000
220
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
240
210
100
200
190
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S22-0224-Rev. B, 07-Mar-2022
Document Number: 75925
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ454EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
1000
10000
IDM limited
1000
10
100 µs
Limited by RDS(on) (1)
1 ms
1
1st line
2nd line
2nd line
ID - Drain Current (A)
100
10 ms 100
100 ms, 1 s, 10 s, DC
0.1
TC = 25 °C
Single pulse
0.01
0.01
(1)
0.1
BVDSS limited
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 68 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S22-0224-Rev. B, 07-Mar-2022
Document Number: 75925
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ454EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75925.
S22-0224-Rev. B, 07-Mar-2022
Document Number: 75925
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 2
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L1
L
L1
A1
θ
e
D1
b3
b4
0.25 gauge line
Backside view (single)
D
Topside view (single)
b2
E3
E1
E
E2
W2
W3
W1
F
K
D3
D3
L1
D2
b
b1
e
b3
D1
b4
Backside view (dual)
D
C
A
Topside view (dual)
Revision: 25-Sep-2023
Document Number: 66934
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
2.75
2.85
2.95
0.108
0.112
0.116
E3
6.05
6.22
6.40
0.238
0.245
0.252
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96
0.117
0°
-
10°
0°
-
10°
ECN: C23-1026-Rev. D, 25-Sep-2023
DWG: 6044
Note
• Millimeters will govern
Revision: 25-Sep-2023
Document Number: 66934
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 01-Jan-2023
1
Document Number: 91000
