SQJ456EP-T2_GE3

SQJ456EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC 100 RDS(on) (Ω) at VGS = 10 V 0.026 RDS(on) (Ω) at VGS = 6 V 0.030 ID (A) 32 Configuration Single D PowerPAK® SO-8L Single m 5m 6.1 5.1 3m m G D 4 G S 3 S S 2 S 1 N-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ456EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °Ca ID TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C IDM 128 IAS 30 EAS 45 TJ, Tstg Operating Junction and Storage Temperature Range 21 32 Soldering Recommendations (Peak Temperature)e, f V 32 IS PD TC = 125 °C UNIT 83 27 - 55 to + 175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Case (Drain) SYMBOL LIMIT RthJA 65 RthJC 1.8 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S11-2288-Rev. F, 28-Nov-11 1 Document Number: 65279 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ456EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) - - ± 100 VGS = 0 V VDS = 100 V - - 1 VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 100 V, TJ = 175 °C - - 150 VGS = 10 V VDS ≥ 5 V 30 - - VGS = 10 V ID = 9.3 A - 0.021 0.026 VGS = 6 V ID = 8.8 A - 0.024 0.030 VGS = 10 V ID = 9.3 A, TJ = 125 °C - 0.040 0.049 VGS = 10 V ID = 9.3 A, TJ = 175 °C - 0.051 0.063 - 36 - - 2673 3342 - 292 365 - 106 133 - 42 63 - 10 - - 7.6 - 0.31 1.72 3.12 - 14 21 gfs VDS = 15 V, ID = 9.3 A V nA μA A Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 15 V, ID = 6 A f = 1 MHz Rg td(on) tr td(off) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tf pF nC Ω - 12 18 - 35 53 - 8 12 - - 128 A - 0.75 1.2 V ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 4.3 A, VGS = 0 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2288-Rev. F, 28-Nov-11 2 Document Number: 65279 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ456EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 6 V 5V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 8 24 16 TC = 125 °C 8 25 °C - 55 °C 4V 0 0 0 1 2 3 4 0 5 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) 6 Transfer Characteristics Output Characteristics 3500 0.04 C - Capacitance (pF) RDS(on) - On-Resistance () 3000 0.03 VGS = 6 V 0.02 VGS = 10 V Ciss 2500 2000 1500 1000 0.01 Crss 500 0 0.00 0 8 16 24 32 40 ID - Drain Current (A) 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 100 2.5 10 RDS(on) - On-Resistance (Normalized) ID = 6 A VGS - Gate-to-Source Voltage (V) Coss 8 VDS = 15 V 6 4 2 5 10 15 20 25 30 35 40 2.1 1.7 1.3 0.9 0.5 - 50 0 0 VGS = 10 V ID = 9.3 A 45 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S11-2288-Rev. F, 28-Nov-11 3 - 25 150 175 Document Number: 65279 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ456EP www.vishay.com Vishay Siliconix 100 0.25 10 0.20 RDS(on) - On-Resistance () IS - Source Current (A) TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) TJ = 150 °C TJ = 25 °C 1 0.1 0.01 0.15 0.10 TJ = 150 °C 0.05 TJ = 25 °C 0.00 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 6 8 10 Source Drain Diode Forward Voltage On-Resistance vs. Gate-to Source Voltage 80 gfs - Transconductance (S) 0.2 VGS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) 0.6 - 0.2 ID = 5 mA - 0.6 - 1.0 ID = 250 µA 64 TC = - 55 °C 48 TC = 25 °C 32 TC = 125 °C 16 - 1.4 - 1.8 - 50 2 VSD - Source-to-Drain Voltage (V) 0 - 25 0 25 50 75 100 125 150 175 0 5 TJ - Temperature (°C) Threshold Voltage 10 15 ID - Drain Current (A) 20 25 Transconductance VDS - Drain-to-Source Voltage (V) 135 ID = 1 mA 128 121 114 107 100 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature S11-2288-Rev. F, 28-Nov-11 4 Document Number: 65279 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ456EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 IDM Limited 100 µs ID - Drain Current (A) 10 Limited by RDS(on)* ID Limited 1 ms 10 ms 1 100 ms, 1 s, 10 s, DC 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S11-2288-Rev. F, 28-Nov-11 5 Document Number: 65279 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ456EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65279. S11-2288-Rev. F, 28-Nov-11 6 Document Number: 65279 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline for Non-Al Parts W E1 E E2 W2 W3 W1 b2 D2 b b1 L L1 L1 A1 e θ D1 D b3 b4 0.25 gauge line Topside view Backside view (single) E2 W2 C A W3 W1 F K D3 D3 D2 b3 b4 Backside view (dual) Revision: 16-May-16 Document Number: 69003 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 b4 0.004 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 3.18 3.28 3.38 0.125 0.129 0.133 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117  0° - 10° 0° - 10° ECN: T16-0221-Rev. D, 16-May-16 DWG: 5976 Note • Millimeters will gover Revision: 16-May-16 Document Number: 69003 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000