SQJ457EP-T1_BE3

SQJ457EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Single • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D 6. 15 m m m 3 1 1 5. m Top View 4 G 3 S 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S Bottom View G PRODUCT SUMMARY VDS (V) -60 RDS(on) (Ω) at VGS = -10 V 0.0250 RDS(on) (Ω) at VGS = -4.5 V 0.0350 ID (A) Configuration -36 D Single P-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and halogen-free SQJ457EP (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source coltage VDS -60 Gate-source coltage VGS ± 20 Continuous drain current TC = 25 °C TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C ID -36 IS -60 -100 IAS -36 EAS 64.8 TJ, Tstg Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e V -21 IDM PD UNIT 68 22 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL LIMIT RthJA 68 RthJC 2.2 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). For PowerPAK SO-8L, the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S22-0060-Rev. B, 24-Jan-2022 Document Number: 76628 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ457EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = -250 μA -60 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage IGSS - - ± 100 VGS = 0 V VDS = -60 V - - -1 - - -50 -150 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = -60 V, TJ = 125 °C VGS = 0 V VDS = -60 V, TJ = 175 °C - - On-State Drain Current a ID(on) VGS = -10 V VDS ≥ -5 V -30 - - VGS = -10 V ID = -10 A - 0.0210 0.0250 Drain-Source On-State Resistance a Forward Transconductance b RDS(on) gfs VGS = -10 V ID = -10 A, TJ = 125 °C - - 0.0409 VGS = -10 V ID = -10 A, TJ = 175 °C - - 0.0504 VGS = -4.5 V ID = -5 A - 0.0288 0.0350 - 26 - VDS = -15 V, ID = -10 A V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Rg VGS = 0 V VGS = -10 V VDS = -25 V, f = 1 MHz VDS = -30 V, ID = -5 A f = 1 MHz td(on) tr td(off) VDD = -30 V, RL = 6 Ω ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω tf - 2600 3400 - 310 450 - 200 275 - 65 100 - 9.5 - - 19 - 0.50 1.19 1.80 - 15 25 pF nC Ω - 5 10 - 40 75 - 6 12 - - -100 A - -0.80 -1.2 V ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = -10 A, VGS = 0 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0060-Rev. B, 24-Jan-2022 Document Number: 76628 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ457EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 80 10000 10000 VGS = 10 V thru 5 V VGS = 4 V 40 100 20 1000 48 1st line 2nd line 1000 60 2nd line ID - Drain Current (A) 64 1st line 2nd line 2nd line ID - Drain Current (A) 80 TC = 25 °C 32 100 16 TC = 125 °C VGS = 3 V TC = -55 °C 0 0 10 0 2 4 6 8 10 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 10 Axis Title Axis Title 50 0.10 10000 10000 TC = 125 °C 20 100 10 0 5 10 15 20 1000 0.06 VGS = 4.5 V 0.04 100 0.02 VGS = 10 V 0.00 10 0 0.08 10 0 25 16 64 Transconductance On-Resistance vs. Drain Current Axis Title 2000 100 Crss Coss 0 10 15 30 45 60 10000 ID = 5 A VDS = 30 V 8 1000 6 1st line 2nd line Ciss 2nd line VGS - Gate-to-Source Voltage (V) 1st line 2nd line 1000 3000 4 100 2 0 10 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S22-0060-Rev. B, 24-Jan-2022 80 10 10000 4000 2nd line C - Capacitance (pF) 48 ID - Drain Current (A) 2nd line Axis Title 0 32 ID - Drain Current (A) 2nd line 5000 1000 1st line 2nd line 1000 30 2nd line RDS(on) - On-Resistance (Ω) TC = 25 °C 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 40 100 Document Number: 76628 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ457EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 10 A 10 2nd line IS - Source Current (A) VGS = 10 V 1000 1.7 VGS = 4.5 V 1.3 100 0.9 0.5 0 25 50 1000 1 TJ = 25 °C 0.1 100 0.01 0.001 10 -50 -25 TJ = 150 °C 1st line 2nd line 2.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.5 10 0 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.10 1.0 10000 10000 0.7 1000 0.06 TJ = 150 °C 0.04 100 0.02 0.00 4 6 0.1 100 -0.5 10 2 ID = 5 mA -0.2 TJ = 25 °C 0 1000 0.4 1st line 2nd line 2nd line VGS(th) Variance (V) 0.08 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID = 250 μA 8 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 10000 ID = 1 mA -63 1000 -66 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) -60 -69 100 -72 -75 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain-Source Breakdown vs. Junction Temperature S22-0060-Rev. B, 24-Jan-2022 Document Number: 76628 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ457EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TC = 25 °C, unless otherwise noted) Axis Title 1000 10000 IDM limited 100 μs 10 1000 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 Limited by RDS(on) (1) 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 68 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S22-0060-Rev. B, 24-Jan-2022 Document Number: 76628 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ457EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TC = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76628. S22-0060-Rev. B, 24-Jan-2022 Document Number: 76628 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 W E1 E E2 W2 W3 W1 b2 D2 b b1 L1 L L1 A1 θ e D1 b3 b4 0.25 gauge line Backside view (single) D Topside view (single) b2 E3 E1 E E2 W2 W3 W1 F K D3 D3 L1 D2 b b1 e b3 D1 b4 Backside view (dual) D C A Topside view (dual) Revision: 25-Sep-2023 Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 E3 6.05 6.22 6.40 0.238 0.245 0.252 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117  0° - 10° 0° - 10° ECN: C23-1026-Rev. D, 25-Sep-2023 DWG: 6044 Note • Millimeters will govern Revision: 25-Sep-2023 Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000