SQJ459EP
www.vishay.com
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L Single
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• AEC-Q101 qualified c
D
6.
15
m
m
m
1
13
m
4
G
5.
Top View
3
S
2
S
1
S
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
Bottom View
G
PRODUCT SUMMARY
VDS (V)
-60
RDS(on) (Ω) at VGS = -10 V
0.018
RDS(on) (Ω) at VGS = -4.5 V
0.024
ID (A)
Configuration
D
-52
P-Channel MOSFET
Single
ORDERING INFORMATION
Package
PowerPAK SO-8L
SQJ459EP
(for detailed order number please see www.vishay.com/doc?79771)
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current
Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation a
SYMBOL
VDS
VGS
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
LIMIT
-60
± 20
-52
-30
-75
-200
-40
80
83
27
-55 to +175
260
UNIT
SYMBOL
LIMIT
UNIT
RthJA
RthJC
65
1.8
°C/W
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction to ambient
Junction to case (drain)
PCB
mount b
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. When mounted on 1" square PCB (FR4 material)
c. Parametric verification ongoing
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S22-0060-Rev. B, 24-Jan-2022
Document Number: 66963
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ459EP
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0, ID = -250 μA
-60
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-2.0
-2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = -60 V
-
-
-1
-
-
-50
-150
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = -60 V, TJ = 125 °C
VGS = 0 V
VDS = -60 V, TJ = 175 °C
-
-
On-State Drain Current a
ID(on)
VGS = -10 V
VDS £ -5 V
-30
-
-
VGS = -10 V
ID = -3.5 A
-
0.0155
0.0180
VGS = -4.5 V
ID = -3.1 A
-
0.0206
0.0240
VGS = -10 V
ID = -3.5 A, TJ = 125 °C
-
0.0255
-
VGS = -10 V
ID = -3.5 A, TJ = 175 °C
Drain-Source On-State Resistance a
Forward Transconductance b
RDS(on)
gfs
VDS = -30 V, ID = -15 A
-
0.0310
-
-
40
-
V
nA
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Turn-On Delay Time c
Rg
VGS = -10 V
VDS = -30 V, f = 1 MHz
VDS = -40 V, ID = -15 A
f = 1 MHz
td(on)
Rise Time c
Turn-Off Delay Time c
VGS = 0 V
tr
td(off)
Fall Time c
VDD = -30 V, RL = 30 Ω
ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω
tf
-
3448
4586
-
374
497
-
234
312
-
73
108
-
10
-
-
20
-
0.5
1.1
2
-
12
17
pF
nC
Ω
-
19
26
-
88
117
-
45
60
-
-
-200
A
-
-0.8
-1.2
V
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = -2.5 A, VGS = 0
Notes
f. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
g. Guaranteed by design, not subject to production testing.
h. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0060-Rev. B, 24-Jan-2022
Document Number: 66963
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ459EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
6000
60
VGS = 10 V thru 4 V
5000
C - Capacitance (pF)
ID - Drain Current (A)
48
36
24
VGS = 3 V
12
4000
Ciss
3000
2000
1000
Coss
VGS = 2 V
0
0
3
6
9
12
0
15
30
60
Output Characteristics
Capacitance
10
48
8
36
TC = 25 °C
12
6
TC = 25 °C
4
2
TC = 125 °C
TC = 125 °C
TC = - 55 °C
TC = - 55 °C
0
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
Transfer Characteristics
75
0.05
60
0.04
TC = 25 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
45
VDS - Drain-to-Source Voltage (V)
60
24
15
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
ID - Drain Current (A)
0
Crss
TC = - 55 °C
45
30
TC = 125 °C
15
0.03
VGS = 4.5 V
0.02
VGS = 10 V
0.01
0
0.00
0
5
10
15
ID - Drain Current (A)
Transconductance
S22-0060-Rev. B, 24-Jan-2022
20
25
0
12
24
36
ID - Drain Current (A)
48
60
On-Resistance vs. Drain Current
Document Number: 66963
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ459EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 15 A
VDS = 30 V
8
TJ = 150 °C
10
IS - Source Current (A)
VGS - Gate-to-Source Voltage (V)
10
6
4
2
1
TJ = 25 °C
0.1
0.01
0
0.001
0
20
40
60
80
0.0
0.2
Qg- Total Gate Charge (nC)
2.0
1.0
ID = 14.4 A
1.7
0.7
VGS = 10 V
VGS(th) Variance (V)
RDS(on) - On-Resistance (Normalized)
1.2
Source Drain Diode Forward Voltage
Gate Charge
1.4
VGS = 4.5 V
1.1
ID = 250 μA
0.4
ID = 5 mA
0.1
- 0.2
0.8
0.5
- 50 - 25
0
25
50
75
100
125
150
175
- 0.5
- 50 - 25
0
25
50
75
100
TJ - Junction Temperature (°C)
TJ - Temperature (°C)
On-Resistance vs. Junction Temperature
Threshold Voltage
125
150
175
125
150
175
- 60
VDS - Drain-to-Source Voltage (V)
0.10
0.08
RDS(on) - On-Resistance (Ω)
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0.06
0.04
TJ = 150 °C
0.02
- 63
ID = 1 mA
- 66
- 69
- 72
TJ = 25 °C
0.00
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
S22-0060-Rev. B, 24-Jan-2022
10
- 75
- 50 - 25
0
25
50
75
100
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 66963
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ459EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
100 µs
10
1 ms
10 ms
100 ms
1 s, 10 s, DC
1
Limited by RDS(on)*
BVDSS Limited
0.1
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 68 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S22-0060-Rev. B, 24-Jan-2022
Document Number: 66963
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ459EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66963.
S22-0060-Rev. B, 24-Jan-2022
Document Number: 66963
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 2
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L1
L
L1
A1
θ
e
D1
b3
b4
0.25 gauge line
Backside view (single)
D
Topside view (single)
b2
E3
E1
E
E2
W2
W3
W1
F
K
D3
D3
L1
D2
b
b1
e
b3
D1
b4
Backside view (dual)
D
C
A
Topside view (dual)
Revision: 25-Sep-2023
Document Number: 66934
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
2.75
2.85
2.95
0.108
0.112
0.116
E3
6.05
6.22
6.40
0.238
0.245
0.252
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96
0.117
0°
-
10°
0°
-
10°
ECN: C23-1026-Rev. D, 25-Sep-2023
DWG: 6044
Note
• Millimeters will govern
Revision: 25-Sep-2023
Document Number: 66934
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
1
Document Number: 91000
