SQJ460AEP
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Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L Single
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
6.
15
m
m
m
1
13
m
4
G
5.
Top View
3
S
2
S
1
S
D
Bottom View
PRODUCT SUMMARY
VDS (V)
60
RDS(on) () at VGS = 10 V
0.0087
RDS(on) () at VGS = 4.5 V
0.0094
ID (A)
Configuration
Package
G
58
N-Channel MOSFET
Single
S
PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
SYMBOL
VDS
LIMIT
60
Gate-source voltage
VGS
± 20
TC = 25 °C
Continuous drain current
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current
L = 0.1 mH
Single pulse avalanche energy
TC = 25 °C
Maximum power dissipation a
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak
ID
58
IS
62
180
IAS
35
EAS
61
TJ, Tstg
temperature) c, d
V
33.4
IDM
PD
UNIT
68
27
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
LIMIT
RthJA
68
RthJC
2.2
UNIT
°C/W
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257).The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S17-0552-Rev. C, 17-Apr-17
Document Number: 62914
1
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
VDS
VGS = 0, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
VGS = 0 V
VDS = 60 V
-
-
1
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = 60 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
150
On-state drain current a
ID(on)
VGS = 10 V
VDS 5 V
30
-
-
VGS = 10 V
ID = 10.7 A
-
0.0072
0.0087
Drain-source breakdown voltage
Gate-source threshold voltage
Drain-source on-state resistance a
Forward
transconductance b
RDS(on)
gfs
VGS = 10 V
ID = 19.7 A, TJ = 125 °C
-
-
0.0145
VGS = 10 V
ID = 10.7 A, TJ = 175 °C
-
-
0.0183
VGS = 4.5 V
ID = 10.3 A
-
0.0078
0.0094
-
88
-
VDS = 15 V, ID = 10.7 A
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate
charge c
charge c
Qgs
VGS = 10 V
VDS = 30 V, ID = 18 A
Qgd
Gate resistance
Rg
Turn-on delay time c
Rise time c
Turn-off delay time
VDS = 30 V, f = 1 MHz
Qg
Gate-source charge c
Gate-drain
VGS = 0 V
tr
c
Fall time c
Source-Drain Diode Ratings and
f = 1 MHz
td(on)
td(off)
VDD = 30 V, RL = 30
ID 1 A, VGEN = 10 V, Rg = 1
tf
-
2123
2654
-
282
353
-
118
148
-
71
106
-
9.7
-
-
12.5
-
0.3
1.0
2.0
-
12
18
-
11
17
-
56
84
-
25
32
-
-
180
A
-
0.8
1.2
V
pF
nC
ns
Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = 7.5 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0552-Rev. C, 17-Apr-17
Document Number: 62914
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
40
VGS = 10 V thru 4 V
32
ID - Drain Current (A)
ID - Drain Current (A)
32
VGS = 3 V
24
16
24
TC = 25 °C
16
8
8
0
0
TC = 125 °C
TC = - 55 °C
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
Transfer Characteristics
Output Characteristics
10
200
TC = - 55 °C
160
gfs - Transconductance (S)
ID - Drain Current (A)
8
6
4
TC = 25 °C
2
TC = 25 °C
120
TC = 125 °C
80
40
TC = 125 °C
TC = - 55 °C
0
0
1
2
3
4
5
0.0
5.0
10.0
15.0
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Transconductance
0.015
6000
0.012
4800
0.009
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0
VGS = 4.5 V
0.006
VGS = 10 V
25.0
48
60
3600
Ciss
2400
Crss
1200
0.003
20.0
Coss
0
0.000
0
8
16
24
32
ID - Drain Current (A)
On-Resistance vs. Drain Current
S17-0552-Rev. C, 17-Apr-17
40
0
12
24
36
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 62914
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
10
2nd line
RDS(on) - On-Resistance (Normalized)
ID = 18 A
VDS = 30 V
8
6
4
2
10000
ID = 18 A
VGS = 10 V
2.1
1000
1.7
1st line
2nd line
VGS - Gate-to-Source Voltage (V)
2.5
VGS = 4.5 V
1.3
100
0.9
0.5
0
20
40
60
Qg - Total Gate Charge (nC)
80
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Gate Charge
100
0.05
10
0.04
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
-50 -25
0
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.03
0.02
TJ = 150 °C
0.01
TJ = 25 °C
0.001
0.00
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
10
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Axis Title
85
0.45
1000
1st line
2nd line
-0.25
ID = 5 mA
-0.60
100
ID = 250 µA
-0.95
-1.30
VDS - Drain-to-Source Voltage (V)
10000
0.10
2nd line
VGS(th) Variance (V)
2
4
6
8
VGS - Gate-to-Source Voltage (V)
ID = 1 mA
81
77
73
69
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
2nd line
Threshold Voltage
S17-0552-Rev. C, 17-Apr-17
65
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
Document Number: 62914
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ460AEP
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1000
10000
IDM limited
100 µs
1000
10
1 ms
1
1st line
2nd line
2nd line
ID - Drain Current (A)
100
10 ms
100 ms, 1 s, 10 s, DC
Limited by RDS(on) (1)
100
0.1
TC = 25 °C
Single pulse
0.01
0.01
(1)
BVDSS limited
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 68 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S17-0552-Rev. C, 17-Apr-17
Document Number: 62914
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ460AEP
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62914.
S17-0552-Rev. C, 17-Apr-17
Document Number: 62914
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ460AEP
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REVISION HISTORY
REVISION
Vishay Siliconix
a
DATE
DESCRIPTION OF CHANGE
B
12-Feb-16
• Rg changed
C
06-Apr-17
• ID rating updated
Note
a. As of April 2014
S17-0552-Rev. C, 17-Apr-17
Document Number: 62914
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 2
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L1
L
L1
A1
θ
e
D1
b3
b4
0.25 gauge line
Backside view (single)
D
Topside view (single)
b2
E1
E
E2
W2
W3
W1
F
K
D3
D3
L1
D2
b
b1
e
b3
D1
b4
Backside view (dual)
D
C
A
Topside view (dual)
Document Number: 66934
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Nov-2021
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
2.75
2.85
2.95
0.108
0.112
0.116
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
θ
2.96
0°
-
0.117
10°
0°
-
10°
ECN: C21-1498-Rev. C, 01-Nov-2021
DWG: 6044
Note
• Millimeters will govern
Document Number: 66934
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Revision: 01-Nov-2021
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 09-Jul-2021
1
Document Number: 91000
