SQJ488EP
www.vishay.com
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L Single
• TrenchFET® power MOSFET
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
D
6.
15
m
m
m
1
13
m
4
G
5.
Top View
3
S
2
S
1
S
• Material categorization:
for definitions of compliance please
see www.vishay.com/doc?99912
D
Bottom View
PRODUCT SUMMARY
VDS (V)
G
100
RDS(on) () at VGS = 10 V
0.0210
RDS(on) () at VGS = 4.5 V
0.0258
ID (A)
N-Channel MOSFET
42
Configuration
S
Single
ORDERING INFORMATION
Package
PowerPAK SO-8L
Lead (Pb)-free and halogen-free
SQJ488EP
(for detailed order number please see www.vishay.com/doc?79771)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
100
Gate-source voltage
VGS
± 20
TC = 25 °C a
Continuous drain current
Continuous source current (diode
TC = 125 °C
conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
ID
60
170
IAS
5.8
EAS
1.68
TJ, Tstg
Operating junction and storage temperature range
24
IS
Soldering recommendations (Peak temperature) e, f
V
42
IDM
PD
UNIT
83
27
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
SYMBOL
PCB
mount c
LIMIT
RthJA
65
RthJC
1.8
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR-4 material)
d. Parametric verification ongoing
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S21-0678-Rev. C, 21-Jun-2021
Document Number: 62846
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ488EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0, ID = 250 μA
100
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward
transconductance b
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 100 V
-
-
1
VGS = 0 V
VDS = 100 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 100 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS 5 V
30
-
-
VGS = 10 V
ID = 7.1 A
-
0.0176
0.0210
VGS = 4.5 V
ID = 6.4 A
-
0.0215
0.0258
VGS = 10 V
ID = 7.1 A, TJ = 125 °C
-
-
0.0360
VGS = 10 V
ID = 7.1 A, TJ = 175 °C
-
-
0.0450
-
28
-
-
782
978
VDS = 15 V, ID = 7.1 A
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
VGS = 0 V
VDS = 50 V, f = 1 MHz
VGS = 10 V
VDS = 50 V, ID = 15 A
f = 1 MHz
Rg
td(on)
tr
td(off)
VDD = 50 V, RL = 5
ID 1 A, VGEN = 10 V, Rg = 6
tf
Source-Drain Diode Ratings and Characteristics
-
372
462
-
44
55
-
18
27
-
2
-
-
4.7
-
1.1
2.2
3.3
-
4
6
pF
nC
-
11
16
-
20
30
-
4.6
7
-
-
128
A
-
0.78
1.2
V
ns
b
Pulsed current a
ISM
Forward voltage
VSD
IF = 4.7 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0678-Rev. C, 21-Jun-2021
Document Number: 62846
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ488EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
80
10
VGS = 10 V thru 5 V
ID = 15 A
VGS = 4 V
48
8
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
64
32
16
6
4
2
0
0
0
3
6
9
12
0
15
4
8
20
80
1.20
1.00
64
0.80
ID - Drain Current (A)
ID - Drain Current (A)
16
Gate Charge
Output Characteristics
TC = 25 °C
0.60
0.40
TC = 125 °C
TC = 25 °C
48
32
TC = 125 °C
16
0.20
TC=-55°C
TC=-55°C
0
0.00
0
1
2
3
4
0
5
2
VGS - Gate-to-Source Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transfer Characteristics
0.05
1500
0.04
1200
VGS = 4.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
12
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
0.03
0.02
VGS = 10 V
900
Ciss
600
Coss
0.01
300
Crss
0.00
0
16
32
48
64
ID - Drain Current (A)
On-Resistance vs. Drain Current
S21-0678-Rev. C, 21-Jun-2021
80
0
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 62846
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ488EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.075
ID = 10 A
0.060
2.1
RDS(on) - On-Resistance (Ω)
RDS(on) - On-Resistance (Normalized)
2.5
VGS = 4.5 V
1.7
VGS = 10 V
1.3
0.045
TJ = 150 °C
0.030
0.015
0.9
TJ = 25 °C
0.000
0.5
- 50 - 25
0
25
50
75
100
125
150
0
175
2
TJ - Junction Temperature (°C)
4
6
8
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to Source Voltage
On-Resistance vs. Junction Temperature
100
50
TC = 25 °C
TC = - 55 °C
40
gfs - Transconductance (S)
IS - Source Current (A)
10
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.001
30
TC = 125 °C
20
10
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
ID - Drain Current (A)
VSD - Source-to-Drain Voltage (V)
Transconductance
Source Drain Diode Forward Voltage
0.6
126
VDS - Drain-to-Source Voltage (V)
0.3
VGS(th) Variance (V)
10
0.0
ID = 5 mA
- 0.3
ID = 250 μA
- 0.6
- 0.9
- 1.2
- 50 - 25
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
S21-0678-Rev. C, 21-Jun-2021
125
150
175
120
ID = 1 mA
114
108
102
96
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 62846
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ488EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
Limited by RDS(on)a
100 μs
10
1 ms
ID Limited
1
0.1
10 ms
100 ms, 1 s, 10 s, DC
TC = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
1000
Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
S21-0678-Rev. C, 21-Jun-2021
Document Number: 62846
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ488EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62846.
S21-0678-Rev. C, 21-Jun-2021
Document Number: 62846
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 2
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L1
L
L1
A1
θ
e
D1
b3
b4
0.25 gauge line
Backside view (single)
D
Topside view (single)
b2
E3
E1
E
E2
W2
W3
W1
F
K
D3
D3
L1
D2
b
b1
e
b3
D1
b4
Backside view (dual)
D
C
A
Topside view (dual)
Revision: 25-Sep-2023
Document Number: 66934
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
2.75
2.85
2.95
0.108
0.112
0.116
E3
6.05
6.22
6.40
0.238
0.245
0.252
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96
0.117
0°
-
10°
0°
-
10°
ECN: C23-1026-Rev. D, 25-Sep-2023
DWG: 6044
Note
• Millimeters will govern
Revision: 25-Sep-2023
Document Number: 66934
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
1
Document Number: 91000
