SQJ504EP-T1_BE3

SQJ504EP www.vishay.com Vishay Siliconix Automotive N- and P-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Dual • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D1 D2 6. 15 m m 3 4 S2 G2 m 1 3 .1 m 5 Top View 1 2 S1 G1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 Bottom View G2 PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = ± 10 V RDS(on) () at VGS = ± 4.5 V ID (A) Configuration Package S2 G1 N-CHANNEL P-CHANNEL 40 -40 0.0075 0.0170 0.0110 0.0230 30 -30 N- and p-pair S1 D2 N-Channel MOSFET P-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L SQJ504EP (for detailed order number please see www.vishay.com/doc?79771) Lead (Pb)-free and halogen-free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche Energy Maximum power dissipation b SYMBOL VDS VGS TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e ID IS IDM IAS EAS PD TJ, Tstg N-CHANNEL 40 P-CHANNEL -40 ± 20 30 a 29.3 30 90 25 31.2 34 11 -30 a -19.5 -30 -84 -24 28.8 34 11 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL RthJA RthJC N-CHANNEL 85 4.3 P-CHANNEL 85 4.3 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S22-0380-Rev. B, 02-May-2022 Document Number: 76029 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ504EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage VDS VGS(th) IGSS VGS = 0 V, ID = 250 μA N-Ch 40 - - VGS = 0 V, ID = -250 μA P-Ch -40 - - VDS = VGS, ID = 250 μA N-Ch 1.5 2 2.5 VDS = VGS, ID = -250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b IDSS ID(on) RDS(on) gfs VDS = 40 V P-Ch -1.5 -2 -2.5 N-Ch - - ± 100 P-Ch - - ± 100 N-Ch - - 1 VGS = 0 V VDS = -40 V P-Ch - - -1 VGS = 0 V VDS = 40 V, TJ = 125 °C N-Ch - - 50 VGS = 0 V VDS = -40 V, TJ = 125 °C P-Ch - - -50 VGS = 0 V VDS = 40 V, TJ = 175 °C N-Ch - - 150 VGS = 0 V VDS = -40 V, TJ = 175 °C P-Ch - - -150 VGS = 10 V VDS  5 V N-Ch 10 - - VGS = -10 V VDS  5 V P-Ch -10 - - VGS = 10 V ID = 8 A N-Ch - 0.0061 0.0075 0.0138 0.0170 VGS = -10 V ID = -8 A P-Ch - VGS = 10 V ID = 8 A, TJ = 125 °C N-Ch - - 0.0110 VGS = -10 V ID = -8 A, TJ = 125 °C P-Ch - - 0.0254 VGS = 10 V ID = 8 A, TJ = 175 °C N-Ch - - 0.0130 VGS = -10 V ID = -8 A, TJ = 175 °C P-Ch - - 0.0304 VGS = 4.5 V ID = 5 A N-Ch - 0.0088 0.0110 VGS = -4.5 V ID = -5 A 0.0186 0.0230 P-Ch - VDS = 15 V, ID = 8 A N-Ch - 35 - VDS = -15 V, ID = -8 A P-Ch - 30 - N-Ch - 1355 1900 V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance S22-0380-Rev. B, 02-May-2022 Rg VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 0 V VDS = -25 V, f = 1 MHz P-Ch - 3340 4600 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch - 875 1400 VGS = 0 V VDS = -25 V, f = 1 MHz P-Ch - 230 320 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch - 35 50 VGS = 0 V VDS = -25 V, f = 1 MHz P-Ch - 216 300 VGS = 10 V VDS = 20 V, ID = 5 A N-Ch - 18 30 VGS = -10 V VDS = -20 V, ID = -5 A P-Ch - 56 85 VGS = 10 V VDS = 20 V, ID = 5 A N-Ch - 3.5 - VGS = -10 V VDS = -20 V, ID = -5 A P-Ch - 8.5 - VGS = 10 V VDS = 20 V, ID = 5 A N-Ch - 2.6 - VGS = -10 V VDS = -20 V, ID = -5 A f = 1 MHz P-Ch - 9.9 - N-Ch 0.3 0.72 1.2 P-Ch 1.15 2.37 3.6 pF nC  Document Number: 76029 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ504EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER Turn-on delay time c Rise time c Turn-off delay time c Fall time c SYMBOL td(on) tr td(off) tf Source-Drain Diode Ratings and Characteristics Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb Body diode peak reverse recovery current TEST CONDITIONS MIN. TYP. MAX. N-Ch - 11 20 VDD = -20 V, RL = 4 , ID  -5 A, VGEN = -10 V, Rg = 1  P-Ch - 15 25 VDD = 20 V, RL = 4 , ID  5 A, VGEN = 10 V, Rg = 1  N-Ch - 4 10 VDD = -20 V, RL = 4 , ID  -5 A, VGEN = -10 V, Rg = 1  P-Ch - 6 10 VDD = 20 V, RL = 4 , ID  5 A, VGEN = 10 V, Rg = 1  N-Ch - 21 35 VDD = -20 V, RL = 4 , ID  -5 A, VGEN = -10 V, Rg = 1  P-Ch - 45 70 VDD = 20 V, RL = 4 , ID  5 A, VGEN = 10 V, Rg = 1  N-Ch - 5 10 VDD = -20 V, RL = 4 , ID  -5 A, VGEN = -10 V, Rg = 1  P-Ch - 7 12 VDD = 20 V, RL = 4 , ID  5 A, VGEN = 10 V, Rg = 1  UNIT ns b IRM(REC) N-Ch - - 90 P-Ch - - -84 IS = 8 A, VGS = 0 V N-Ch - 0.803 1.2 IS = -8 A, VGS = 0 V P-Ch - -0.790 -1.2 IF = 5 A, di/dt = 100 A/μs N-Ch - 48 100 IF = -5 A, di/dt = 100 A/μs P-Ch - 26 55 IF = 5 A, di/dt = 100 A/μs N-Ch - 54 110 IF = -5 A, di/dt = 100 A/μs P-Ch - 22 45 IF = 5 A, di/dt = 100 A/μs N-Ch - 25 - IF = -5 A, di/dt = 100 A/μs P-Ch - 15 - IF = 5 A, di/dt = 100 A/μs N-Ch - 23 - IF = -5 A, di/dt = 100 A/μs P-Ch - 11 - IF = 5 A, di/dt = 100 A/μs N-Ch - -2.1 - IF = -5 A, di/dt = 100 A/μs P-Ch - -1.7 - A V ns nC ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  S22-0380-Rev. B, 02-May-2022 Document Number: 76029 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ504EP www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 80 60 10000 10000 VGS = 10 V thru 4 V 32 100 VGS = 3 V 16 1000 36 1st line 2nd line 1000 48 2nd line ID - Drain Current (A) 48 1st line 2nd line 2nd line ID - Drain Current (A) 64 TC = 25 °C 24 100 TC = 125 °C 12 TC = -55 °C 0 0 10 2 4 6 8 10 10 0 2 4 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 1000 48 TC = 125 °C 100 16 0 2nd line RDS(on) - On-Resistance (Ω) TC = 25 °C 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 64 32 8 12 16 10000 0.020 1000 0.015 VGS = 4.5 V 0.010 100 0.005 VGS = 10 V 0.000 10 4 20 10 0 16 32 Transconductance On-Resistance vs. Drain Current Axis Title Axis Title 100 500 Crss 0 10 24 32 40 10000 ID = 5 A VDS = 20 V 8 1000 6 1st line 2nd line 1st line 2nd line Coss 1000 2nd line VGS - Gate-to-Source Voltage (V) 1000 Ciss 16 4 100 2 0 10 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S22-0380-Rev. B, 02-May-2022 80 10 10000 2000 2nd line C - Capacitance (pF) 64 ID - Drain Current (A) 2nd line 2500 8 48 ID - Drain Current (A) 2nd line 1500 10 0.025 10000 0 8 VDS - Drain-to-Source Voltage (V) 2nd line 80 0 6 1st line 2nd line 0 20 Document Number: 76029 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ504EP www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 VGS = 10 V 10 1000 1.4 VGS = 4.5 V 1.1 100 0.8 0.5 2nd line IS - Source Current (A) 1.7 0 25 50 TJ = 150 °C 1000 1 0.1 TJ = 25 °C 0.01 75 100 125 150 175 10 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.05 0.5 10000 10000 0.2 0.02 100 TJ = 150 °C 0.01 1000 -0.1 1st line 2nd line 1000 0.03 2nd line VGS(th) Variance (V) 0.04 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 100 0.001 10 -50 -25 10000 1st line 2nd line ID = 8 A 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 ID = 5 mA -0.4 100 -0.7 ID = 250 μA TJ = 25 °C 0.00 -1.0 10 0 2 4 6 8 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 100 10000 ID = 1 mA IDM Limited 100 μs 52 49 46 100 ID - Drain Current (A) 10 1000 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 55 ID Limited 40 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature S22-0380-Rev. B, 02-May-2022 10 ms 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on)* 0.1 43 1 ms TC = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 76029 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ504EP www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 t1 1. Duty cycle, D = t2 2. Per unit base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDM ZthJA(t) Single pulse 4. Surface mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions S22-0380-Rev. B, 02-May-2022 Document Number: 76029 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ504EP www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 80 45 10000 10000 VGS = 10 V thru 5 V 36 32 100 16 1000 27 1st line 2nd line 1000 2nd line ID - Drain Current (A) 4V 48 1st line 2nd line 2nd line ID - Drain Current (A) 64 18 TC = 25 °C TC = 125 °C 100 9 3V TC = -55 °C 0 0 10 0 2 4 6 8 10 0 10 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 10 Axis Title Axis Title 60 0.05 10000 10000 TC = 125 °C 24 100 12 0 5 10 15 20 1000 0.03 VGS = 4.5 V 0.02 100 0.01 VGS =10 V 0.00 10 0 0.04 10 0 25 12 24 Transconductance On-Resistance vs. Drain Current Axis Title Axis Title 100 Crss 900 Coss 0 10 24 32 40 10000 ID = 5 A VDS = 20 V 8 1000 6 1st line 2nd line 1800 2nd line VGS - Gate-to-Source Voltage (V) 1000 2700 1st line 2nd line 2nd line C - Capacitance (pF) Ciss 16 4 100 2 0 10 0 15 30 45 60 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S22-0380-Rev. B, 02-May-2022 60 10 10000 8 48 ID - Drain Current (A) 2nd line 4500 0 36 ID - Drain Current (A) 2nd line 3600 1st line 2nd line 1000 36 2nd line RDS(on) - On-Resistance (Ω) TC = 25 °C 48 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 75 Document Number: 76029 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ504EP www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 ID = 8 A 10000 VGS = 10 V 10 1.4 VGS = 4.5 V 1.1 100 0.8 0.5 0 25 50 1000 1 0.1 100 0.01 TJ = 25 °C 0.001 10 -50 -25 TJ = 150 °C 1st line 2nd line 1000 2nd line IS - Source Current (A) 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 75 100 125 150 175 10 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line Threshold Voltage Source Drain Diode Forward Voltage Axis Title Axis Title 0.10 1.0 10000 10000 0.04 100 TJ = 150 °C 0.02 1000 0.4 1st line 2nd line 1000 0.06 2nd line VGS(th) Variance (V) 0.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID = 5 mA 0.08 ID = 250 μA 0.1 100 -0.2 TJ = 25 °C 0.00 -0.5 10 0 2 4 6 8 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 100 10000 ID = 1 mA IDM Limited -45 100 μs 1000 -48 -51 100 ID - Drain Current (A) 10 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) -42 ID Limited Limited by RDS(on)* 0.1 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature S22-0380-Rev. B, 02-May-2022 10 ms 100 ms, 1 s, 10 s, DC 1 TC = 25 °C Single Pulse -54 -57 1 ms 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 76029 8 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ504EP www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 t1 1. Duty cycle, D = t2 2. Per unit base = RthJA = 85 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions            Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76029. S22-0380-Rev. B, 02-May-2022 Document Number: 76029 9 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 W E1 E E2 W2 W3 W1 b2 D2 b b1 L1 L L1 A1 θ e D1 b3 b4 0.25 gauge line Backside view (single) D Topside view (single) b2 E3 E1 E E2 W2 W3 W1 F K D3 D3 L1 D2 b b1 e b3 D1 b4 Backside view (dual) D C A Topside view (dual) Revision: 25-Sep-2023 Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 E3 6.05 6.22 6.40 0.238 0.245 0.252 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117  0° - 10° 0° - 10° ECN: C23-1026-Rev. D, 25-Sep-2023 DWG: 6044 Note • Millimeters will govern Revision: 25-Sep-2023 Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL 6.7500 (0.266) 5.1300 (0.202) 0.4100 (0.016) 0, 0 1.7300 (0.068) 0.5000 (0.020) 1.9800 (0.078) 0.9150 (0.036) 0.5850 (0.023) 0.7200 (0.028) 2.1100 (0.083) 3.0750 (0.121) 7.7500 (0.305) 0.5100 (0.020) 0.2550 (0.010) 6.1500 (0.242) 3.9900 (0.157) 2.5650 (0.101) 0.4700 (0.019) 1.2700 (0.050) 0.4100 (0.016) Recommended Minimum Pads Dimensions in mm (inches) Keep-out 6.75 (0.266) x 7.75 (0.305) Revision: 07-Feb-12 1 Document Number: 63817 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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