SQJ560EP-T1_BE3

SQJ560EP www.vishay.com Vishay Siliconix Automotive N- and P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Dual • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D1 D2 6. 15 m m 3 4 S2 G2 m 1 3 .1 m 5 Top View 1 2 S1 G1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 Bottom View G2 PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = ± 10 V RDS(on) () at VGS = ± 4.5 V ID (A) Configuration S2 G1 N-CHANNEL P-CHANNEL 60 -60 0.0120 0.0526 0.0160 0.0755 30 -18 N- and p-pair S1 D2 N-Channel MOSFET P-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L SQJ560EP (for detailed order number please see www.vishay.com/doc?79771) Lead (Pb)-free and halogen-free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche Energy Maximum power dissipation b SYMBOL VDS VGS TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e ID IS IDM IAS EAS PD TJ, Tstg N-CHANNEL 60 P-CHANNEL -60 ± 20 30 a 24.6 30 120 23 26.4 34 11 -18 -10.3 -30 -50 -24 28.8 34 11 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL RthJA RthJC N-CHANNEL 85 4.3 P-CHANNEL 85 4.3 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S22-0380-Rev. B, 02-May-2022 Document Number: 76266 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ560EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 μA N-Ch 60 - - VGS = 0 V, ID = -250 μA P-Ch -60 - - VDS = VGS, ID = 250 μA N-Ch 1.5 2 2.5 VDS = VGS, ID = -250 μA VDS = 0 V, VGS = ± 20 V P-Ch -1.5 -2 -2.5 N-Ch - - ± 100 P-Ch - - ± 100 VGS = 0 V VDS = 60 V N-Ch - - 1 VGS = 0 V VDS = -60 V P-Ch - - -1 VGS = 0 V VDS = 60 V, TJ = 125 °C N-Ch - - 50 VGS = 0 V VDS = -60 V, TJ = 125 °C P-Ch - - -50 VGS = 0 V VDS = 60 V, TJ = 175 °C N-Ch - - 150 VGS = 0 V VDS = -60 V, TJ = 175 °C P-Ch - - -150 VGS = 10 V VDS  5 V N-Ch 10 - - VGS = -10 V VDS  5 V P-Ch -10 - - VGS = 10 V ID = 10 A N-Ch - 0.0099 0.0120 VGS = -10 V ID = -10 A P-Ch - 0.0432 0.0526 VGS = 10 V ID = 10 A, TJ = 125 °C N-Ch - - VGS = -10 V ID = -10 A, TJ = 125 °C P-Ch - - 0.0872 VGS = 10 V ID = 10 A, TJ = 175 °C N-Ch - - 0.0185 VGS = -10 V ID = -10 A, TJ = 175 °C P-Ch - - 0.1072 VGS = 4.5 V ID = 8 A N-Ch - 0.0133 0.0160 VGS = -4.5 V ID = -8 A 0.0628 0.0755 V nA μA A 0.0164 P-Ch - VDS = 15 V, ID = 10 A N-Ch - 56 - VDS = -15 V, ID = -10 A P-Ch - 16 -  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Rg S22-0380-Rev. B, 02-May-2022 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch - 1205 1650 VGS = 0 V VDS = -25 V, f = 1 MHz P-Ch - 1195 1650 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch - 560 800 VGS = 0 V VDS = -25 V, f = 1 MHz P-Ch - 162 250 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch - 29 42 VGS = 0 V VDS = -25 V, f = 1 MHz P-Ch - 102 150 VGS = 10 V VDS = 30 V, ID = 10 A N-Ch - 18 30 VGS = -10 V VDS = -30 V, ID = -10 A P-Ch - 29 45 VGS = 10 V VDS = 30 V, ID = 10 A N-Ch - 4 - VGS = -10 V VDS = -30 V, ID = -10 A P-Ch - 5 - VGS = 10 V VDS = 30 V, ID = 10 A N-Ch - 2 - VGS = -10 V VDS = -30 V, ID = -10 A P-Ch - 7 - N-Ch 0.23 0.46 0.70 P-Ch 1.02 2.06 3.10 f = 1 MHz pF nC  Document Number: 76266 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ560EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER Turn-on delay time c Rise time c Turn-off delay time c Fall time c SYMBOL td(on) tr td(off) tf Source-Drain Diode Ratings and Characteristics Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time Body diode peak reverse recovery current TEST CONDITIONS MIN. TYP. MAX. N-Ch - 12 20 VDD = -30 V, RL = 3 , ID  -10 A, VGEN = -10 V, Rg = 1  P-Ch - 11 20 VDD = 30 V, RL = 3 , ID  10 A, VGEN = 10 V, Rg = 1  N-Ch - 4 10 VDD = -30 V, RL = 3 , ID  -10 A, VGEN = -10 V, Rg = 1  P-Ch - 6 10 VDD = 30 V, RL = 3 , ID  10 A, VGEN = 10 V, Rg = 1  N-Ch - 20 35 VDD = -30 V, RL = 3 , ID  -10 A, VGEN = -10 V, Rg = 1  P-Ch - 27 45 VDD = 30 V, RL = 3 , ID  10 A, VGEN = 10 V, Rg = 1  N-Ch - 4 10 VDD = -30 V, RL = 3 , ID  -10 A, VGEN = -10 V, Rg = 1  P-Ch - 5 10 VDD = 30 V, RL = 3 , ID  10 A, VGEN = 10 V, Rg = 1  UNIT ns b tb IRM(REC) N-Ch - - 120 P-Ch - - -50 IS = 10 A, VGS = 0 V N-Ch - 0.83 1.2 IS = -10 A, VGS = 0 V P-Ch - -0.88 -1.2 IF = 10 A, di/dt = 100 A/μs N-Ch - 37 80 IF = -10 A, di/dt = 100 A/μs P-Ch - 39 80 IF = 10 A, di/dt = 100 A/μs N-Ch - 24 50 IF = -10 A, di/dt = 100 A/μs P-Ch - 58 120 - IF = 10 A, di/dt = 100 A/μs N-Ch - 14 IF = -10 A, di/dt = 100 A/μs P-Ch - 29 - IF = 10 A, di/dt = 100 A/μs N-Ch - 23 - IF = -10 A, di/dt = 100 A/μs P-Ch - 10 - IF = 10 A, di/dt = 100 A/μs N-Ch - -1.3 - IF = -10 A, di/dt = 100 A/μs P-Ch - -3.3 - A V ns nC ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  S22-0380-Rev. B, 02-May-2022 Document Number: 76266 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ560EP www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 100 VGS = 10 V thru 5 V 40 100 20 1000 60 1st line 2nd line 1000 VGS = 4 V 60 2nd line ID - Drain Current (A) 80 1st line 2nd line 2nd line ID - Drain Current (A) 80 40 TC = 25 °C TC = 125 °C 100 20 VGS = 3 V TC = -55 °C 0 0 10 0 2 4 6 8 10 0 10 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 100 10 0.05 10000 1000 60 TC = 125 °C 40 100 20 0 2nd line RDS(on) - On-Resistance (Ω) TC = 25 °C 80 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 4 8 12 16 0.03 VGS = 4.5 V 0.02 0.01 VGS = 10 V 0.00 10 0 0.04 0 20 18 ID - Drain Current (A) 2nd line Axis Title Coss 640 100 320 Crss 0 10 48 60 10000 VDS = 30 V ID = 10 A 8 1000 6 1st line 2nd line 1000 2nd line VGS - Gate-to-Source Voltage (V) Ciss 960 1st line 2nd line 2nd line C - Capacitance (pF) 1280 36 4 100 2 0 10 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S22-0380-Rev. B, 02-May-2022 90 10 10000 24 72 Axis Title 1600 12 54 On-Resistance vs. Drain Current Transconductance 0 36 ID - Drain Current (A) 2nd line 20 Document Number: 76266 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ560EP www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 ID = 10 A VGS = 4.5 V 1.0 100 0.7 0.4 1000 1 25 50 100 TJ = 25 °C 0.01 10 75 100 125 150 175 0 0.2 0.5 0.7 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title 0.060 0.50 10000 0.20 1000 0.036 0.024 TJ = 125°C 100 2nd line VGS(th) Variance (V) 0.048 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 0.1 10 0 1st line 2nd line 1.3 10 2nd line IS - Source Current (A) 1000 -50 -25 10000 VGS = 10 V 1.6 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 1.9 -0.10 ID = 5 mA -0.40 -0.70 0.012 ID = 250 μA TJ = 25 °C 0.000 -1.00 10 0 2 4 6 8 -50 -25 10 0 25 50 75 100 125 150 175 TJ - Temperature (°C) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 1000 IDM limited ID = 1 mA 100 72 70 68 ID - Drain Current (A) 74 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 76 100 μs 10 ID limited 1 Limited by RDS(on)* 0.1 1 ms 10 ms 100 ms, 1 s, 10 s, DC BVDSS limited TC = 25 °C single pulse 66 -50 -25 0 25 50 75 100 125 150 175 0.01 0.01 TJ - Junction Temperature (°C) 2nd line 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Drain Source Breakdown vs. Junction Temperature Safe Operating Area S22-0380-Rev. B, 02-May-2022 Document Number: 76266 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ560EP www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 t1 1. Duty cycle, D = t2 2. Per unit base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDM ZthJA(t) Single pulse 4. Surface mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 0.2 1000 0.1 0.1 0.01 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.05 100 0.02 Single pulse 0.001 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions S22-0380-Rev. B, 02-May-2022 Document Number: 76266 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ560EP www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 60 10000 10000 50 VGS = 10 V thru 6 V 24 VGS = 4 V 100 1000 30 1st line 2nd line 1000 36 2nd line ID - Drain Current (A) 40 VGS = 5 V 1st line 2nd line 2nd line ID - Drain Current (A) 48 20 TC = 25 °C 10 12 TC = 125 °C VGS = 3 V 0 2 4 6 8 0 10 10 6 8 Output Characteristics Transfer Characteristics 1000 1st line 2nd line 15 TC = 125 °C 10 100 5 0 2nd line RDS(on) - On-Resistance (Ω) TC = -55 °C TC = 25 °C 20 6 9 12 0.160 VGS = 4.5 V 0.120 0.080 VGS = 10 V 0.040 0.000 10 3 0 15 8 Axis Title 1st line 2nd line Crss 100 Coss 0 10 36 48 60 10000 VDS = 30 V ID = 10 A 8 1000 6 1st line 2nd line 1000 900 2nd line VGS - Gate-to-Source Voltage (V) Ciss 1200 4 100 2 0 10 0 7 14 21 28 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S22-0380-Rev. B, 02-May-2022 40 10 10000 24 32 Axis Title 1500 12 24 On-Resistance vs. Drain Current Transconductance 300 16 ID - Drain Current (A) 2nd line ID - Drain Current (A) 2nd line 600 10 0.200 10000 0 4 VGS - Gate-to-Source Voltage (V) 2nd line Axis Title 2nd line gfs - Transconductance (S) 2 VDS - Drain-to-Source Voltage (V) 2nd line 25 0 TC = -55 °C 0 10 0 2nd line C - Capacitance (pF) 100 35 Document Number: 76266 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ560EP www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 VGS = 10 V ID = 10 A 1.5 VGS = 4.5 V 1.2 100 0.9 0.6 0 25 50 0.1 TJ = 25 °C 75 100 125 150 175 0 0.2 0.4 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) 2nd line Threshold Voltage Source Drain Diode Forward Voltage Axis Title 0.5 10000 0.2 1000 1st line 2nd line 0.240 0.160 100 TJ = 125°C 2nd line VGS(th) Variance (V) 0.320 TJ = 25 °C 2 4 6 8 ID = 5 mA -0.4 ID = 250 μA -1.0 10 0 -0.1 -0.7 0.080 0.000 -50 -25 10 0 25 50 75 100 125 150 175 TJ - Temperature (°C) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 1000 74 IDM limited ID = 1 mA 100 68 65 ID - Drain Current (A) 71 1st line 2 d li 2nd line VDS - Drain-to-Source Voltage (V) 0.6 TJ - Junction Temperature (°C) 2nd line 0.400 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 1 0.01 10 -50 -25 10 1st line 2nd line 1000 2nd line IS - Source Current (A) 1.8 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.1 100 μs 10 Limited by RDS(on)* 1 ms 1 10 ms 100 ms, 1 s, 10 s, DC 0.1 62 BVDSS limited TC = 25 °C single pulse 59 0.01 0.01 TJ - Junction Temperature (°C) 2nd line 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Drain Source Breakdown vs. Junction Temperature Safe Operating Area -50 -25 0 25 50 S22-0380-Rev. B, 02-May-2022 75 100 125 150 175 Document Number: 76266 8 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ560EP www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 t1 1. Duty cycle, D = t2 2. Per unit base = RthJA = 85 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.05 0.01 100 0.02 Single pulse 0.001 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions            Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76266. S22-0380-Rev. B, 02-May-2022 Document Number: 76266 9 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 W E1 E E2 W2 W3 W1 b2 D2 b b1 L1 L L1 A1 θ e D1 b3 b4 0.25 gauge line Backside view (single) D Topside view (single) b2 E3 E1 E E2 W2 W3 W1 F K D3 D3 L1 D2 b b1 e b3 D1 b4 Backside view (dual) D C A Topside view (dual) Revision: 25-Sep-2023 Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 E3 6.05 6.22 6.40 0.238 0.245 0.252 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117  0° - 10° 0° - 10° ECN: C23-1026-Rev. D, 25-Sep-2023 DWG: 6044 Note • Millimeters will govern Revision: 25-Sep-2023 Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL 6.7500 (0.266) 5.1300 (0.202) 0.4100 (0.016) 0, 0 1.7300 (0.068) 0.5000 (0.020) 1.9800 (0.078) 0.9150 (0.036) 0.5850 (0.023) 0.7200 (0.028) 2.1100 (0.083) 3.0750 (0.121) 7.7500 (0.305) 0.5100 (0.020) 0.2550 (0.010) 6.1500 (0.242) 3.9900 (0.157) 2.5650 (0.101) 0.4700 (0.019) 1.2700 (0.050) 0.4100 (0.016) Recommended Minimum Pads Dimensions in mm (inches) Keep-out 6.75 (0.266) x 7.75 (0.305) Revision: 07-Feb-12 1 Document Number: 63817 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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