SQJ840EP
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Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
30
RDS(on) (Ω) at VGS = 10 V
0.0093
• 100 % Rg and UIS tested
RDS(on) (Ω) at VGS = 4.5 V
0.0138
• AEC-Q101 qualified
ID (A)
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
30
Configuration
Single
Package
PowerPAK SO-8L
D
PowerPAK® SO-8L Single
D
6.
15
m
m
m
13
m
4
G
5.
1
Top View
3
S
2
S
G
1
S
N-Channel MOSFET
S
Bottom View
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current a
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
30
30
IDM
120
IAS
23
EAS
26
TJ, Tstg
Soldering Recommendations (Peak Temperature) d, e
V
30
IS
PD
UNIT
46
15
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
SYMBOL
LIMIT
RthJA
65
RthJC
3.2
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-1878-Rev. C, 17-Aug-15
Document Number: 70325
1
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SQJ840EP
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
VDS
VGS = 0 V, ID = 250 μA
30
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.2
1.7
2.2
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 30 V
-
-
1
VGS = 0 V
VDS = 30 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 30 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS ≥ 5 V
30
-
-
VGS = 10 V
ID = 10.3 A
-
0.0075
0.0093
VGS = 10 V
ID = 10.3 A, TJ = 125 °C
-
0.0115
0.0150
VGS = 10 V
ID = 10.3 A, TJ = 175 °C
-
0.0140
0.0170
VGS = 4.5 V
ID = 8.7 A
VDS = 15 V, ID = 16 A
-
0.0110
0.0138
-
38
-
V
nA
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
Rg
VGS = 0 V
VGS = 10 V
VDS = 15 V, f = 1 MHz
VDS = 15 V, ID = 16.5 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω
tf
Source-Drain Diode Ratings and Characteristics
-
1550
1900
-
575
690
-
210
260
-
25.3
38
-
3.7
-
-
5.4
-
0.4
-
1.5
-
11
15
pF
nC
Ω
-
11
15
-
28
35
-
17
25
-
-
120
A
-
0.8
1.2
V
ns
b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = 10 A, VGS = 0 V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1878-Rev. C, 17-Aug-15
Document Number: 70325
2
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ840EP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
40
VGS = 10 V thru 4 V
32
ID - Drain Current (A)
ID - Drain Current (A)
32
24
16
3V
8
24
16
TC = 25 °C
8
TC = 125 °C
0
0
2
4
6
8
0
10
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
60
0.05
TC = -55 °C
0.04
RDS(on) - On-Resistance (Ω)
48
gfs - Transconductance (S)
TC = -55 °C
TC = 25 °C
36
TC = 125 °C
24
12
0.03
0.02
VGS = 4.5 V
0.01
VGS = 10 V
0
0
5
10
15
20
0
25
0
8
ID - Drain Current (A)
16
24
32
40
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
2500
10
VGS - Gate-to-Source Voltage (V)
ID = 16.5 A
C - Capacitance (pF)
2000
Ciss
1500
1000
Coss
500
8
VDS = 15 V
6
4
2
Crss
0
0
10
20
VDS - Drain-to-Source Voltage (V)
Capacitance
S15-1878-Rev. C, 17-Aug-15
30
0
0
5
10
15
20
25
30
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 70325
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SQJ840EP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
2.0
10
1.7
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
ID = 18 A
1.4
VGS = 10 V
1.1
1
TJ = 150 °C
TJ = 25 °C
0.1
0.01
0.8
0.5
-50
-25
0
25
50
75
100
125
150
0.001
0.0
175
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
Source Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
0.10
0.4
0.2
0
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
0.08
0.06
0.04
ID = 5 mA
-0.2
-0.4
ID = 250 μA
-0.6
TJ = 150 °C
0.02
-0.8
TJ = 25 °C
0
0
1
2
3
4
5
6
7
8
9
-1.0
-50
10
-25
VGS - Gate-to-Source Voltage (V)
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
34
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
33
32
31
30
29
28
-50
-25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S15-1878-Rev. C, 17-Aug-15
Document Number: 70325
4
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ840EP
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
100
ID - Drain Current (A)
Limited by RDS(on)*
10
100 μs
ID Limited
1 ms
10 ms
100 ms, 1 s, 10 s, DC
1
0.1
TC = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
0.02
3. TJM - T A = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-1878-Rev. C, 17-Aug-15
Document Number: 70325
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ840EP
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70325.
S15-1878-Rev. C, 17-Aug-15
Document Number: 70325
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ840EP
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REVISION HISTORY
REVISION
C
a
DATE
04-Aug-15
Vishay Siliconix
DESCRIPTION OF CHANGE
• Revised Rg minimum limit
Note
a. As of April 2014
S15-1878-Rev. C, 17-Aug-15
Document Number: 70325
7
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 1
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L
L1
L1
A1
e
θ
D1
D
b3
b4
0.25 gauge line
Topside view
Backside view (single)
E2
W2
C
A
W3
W1
F
K
D3
D3
D2
b3
b4
Backside view (dual)
Revision: 05-Aug-2019
Document Number: 69003
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
MIN.
NOM.
INCHES
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
3.18
3.28
3.38
0.125
0.129
0.133
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96
0.117
0°
-
10°
0°
-
10°
ECN: S19-0643-Rev. E, 05-Aug-2019
DWG: 5976
Note
• Millimeters will gover
Revision: 05-Aug-2019
Document Number: 69003
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PAD Pattern
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Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 01-Jan-2022
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Document Number: 91000
