SQJ848EP-T1_GE3

SQJ848EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0075 RDS(on) () at VGS = 4.5 V 0.0120 ID (A) • AEC-Q101 Qualified • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 47 Configuration Single PowerPAK® SO-8L Single m 5m 6.1 D 5.1 3m m G D 4 G S 3 S S 2 S N-Channel MOSFET 1 ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ848EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Currenta Continuous Source Current (Diode TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 30 IS 30 120 IAS 27 EAS 36 TJ, Tstg Soldering Recommendations (Peak Temperature)d, e V 47 IDM PD UNIT 68 22 - 55 to + 175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL LIMIT RthJA 30 RthJC 2.2 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S13-1186-Rev. G, 03-Jun-13 Document Number: 65359 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ848EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage 40 - - 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward VGS = 0, ID = 250 μA VDS = VGS, ID = 250 μA IGSS Zero Gate Voltage Drain Current Transconductanceb VDS VGS(th) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 - - VGS = 10 V VDS5 V 30 VGS = 10 V ID = 10.3 A - 0.00675 0.00750 VGS = 4.5 V ID = 8.7 A - 0.01000 0.01200 VGS = 10 V ID = 12.4 A, TJ = 125 °C - 0.01200 0.01500 VGS = 10 V ID = 12.4 A, TJ = 175 °C - 0.01400 0.01800 VDS = 15 V, ID = 12.4 A - 56 - - 2000 2500 V nA μA A  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Rg VGS = 0 V VDS = 20 V, f = 1 MHz VGS = 10 V VDS = 10 V, ID = 16 A f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 20  ID  1 A, VGEN = 10 V, Rg = 6  tf - 260 - - 150 - - 15 23 - 6.7 - - 5.1 - 0.5 1.0 1.5 - 25 40 pF nC  - 12 20 - 25 40 - 10 15 - - 120 A - 0.8 1.1 V ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 10 A, VGS = 0 Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1186-Rev. G, 03-Jun-13 Document Number: 65359 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ848EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 50 VGS = 10 V thru 5 V VGS = 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 30 20 TC = 25 °C 10 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 10 0 1 2 4 5 6 Transfer Characteristics Output Characteristics 0.05 80 TC = - 55 °C 64 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 3 VGS - Gate-to-Source Voltage (V) TC = 25 °C 48 32 TC = 125 °C 16 0.04 0.03 0.02 VGS = 4.5 V 0.01 VGS = 10 V 0.00 0 0 6 12 18 ID - Drain Current (A) 24 0 30 10 20 30 ID - Drain Current (A) 40 50 On-Resistance vs. Drain Current Transconductance 3000 10 ID = 16 A VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 2500 Ciss 2000 1500 Coss 1000 500 8 VDS = 10 V 6 4 2 Crss 0 0 0 10 20 30 V DS - Drain-to-Source Voltage (V) Capacitance S13-1186-Rev. G, 03-Jun-13 40 0 10 20 30 Qg - Total Gate Charge (nC) 40 Gate Charge Document Number: 65359 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ848EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 14 A 1.7 10 VGS = 10 V I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 2.0 1.4 1.1 0.8 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.5 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 0.001 0.0 175 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 0.10 0.6 0.3 0.08 VGS(th) Variance (V) R DS(on) - On-Resistance (Ω) 0.2 0.06 0.04 0 - 0.3 ID = 5 mA - 0.6 TJ = 150 °C ID = 250 µA 0.02 - 0.9 TJ = 25 °C 0.00 0 1 2 3 4 5 6 7 8 9 - 1.2 - 50 10 - 25 0 VGS - Gate-to-Source Voltage (V) 25 50 75 100 125 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage 150 175 Threshold Voltage VDS - Drain-to-Source Voltage (V) 52 ID = 1 mA 50 48 46 44 42 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature S13-1186-Rev. G, 03-Jun-13 Document Number: 65359 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ848EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TC = 25 °C, unless otherwise noted) 1000 IDM Limited 100 ID - Drain Current (A) Limited by RDS(on)* 100 μs 1 ms 10 ID Limited 10 ms 100 ms, 1 s, 10 s, DC 1 TC = 25 °C Single Pulse 0.1 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 30 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S13-1186-Rev. G, 03-Jun-13 Document Number: 65359 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ848EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TC = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65359. S13-1186-Rev. G, 03-Jun-13 Document Number: 65359 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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