SQJ858EP
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
40
RDS(on) () at VGS = 10 V
0.006
• 100 % Rg and UIS Tested
RDS(on) () at VGS = 4.5 V
0.009
• AEC-Q101 Qualified
ID (A)
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
75
Configuration
Single
PowerPAK® SO-8L Single
m
5m
6.1
D
5.1
3m
m
G
D
4
G
S
3
S
2
S
S
1
N-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK SO-8L
Lead (Pb)-free and Halogen-free
SQJ858EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
43
60
IDM
200
IAS
40
EAS
80
TJ, Tstg
Soldering Recommendations (Peak Temperature)c, d
V
75
IS
PD
UNIT
68
22
- 55 to + 175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
SYMBOL
PCB
Mountb
LIMIT
RthJA
68
RthJC
2.2
UNIT
°C/W
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S12-2275-Rev. B, 24-Sep-12
Document Number: 67714
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ858EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
40
-
-
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
VGS = 0, ID = 250 μA
VDS = VGS, ID = 250 μA
IGSS
Zero Gate Voltage Drain Current
Transconductanceb
VDS
VGS(th)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS5 V
30
-
-
VGS = 10 V
ID = 11 A
-
0.005
0.006
VGS = 4.5 V
ID = 9 A
-
0.007
0.009
VGS = 10 V
ID = 11 A, TJ = 125 °C
-
-
0.015
VGS = 10 V
ID = 11 A, TJ = 175 °C
-
-
0.019
-
49
-
-
2000
2500
-
500
625
-
220
275
VDS = 15 V, ID = 11 A
V
nA
μA
A
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
Rg
VGS = 0 V
VDS = 20 V, f = 1 MHz
VGS = 10 V
VDS = 20 V, ID = 16 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 20 V, RL = 20
ID 1 A, VGEN = 10 V, Rg = 6
tf
-
39
60
-
6.7
-
-
8
-
0.40
0.83
1.30
-
18
27
pF
nC
-
10
15
-
38
57
-
17
26
-
-
200
A
-
0.76
1.1
V
ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 10 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2275-Rev. B, 24-Sep-12
Document Number: 67714
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ858EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
160
120
VGS = 10 V thru 5 V
96
ID - Drain Current (A)
ID - Drain Current (A)
128
96
VGS = 4 V
64
32
72
TC = 25 °C
48
24
TC = 125 °C
VGS = 3 V
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
Transfer Characteristics
Output Characteristics
100
0.025
TC = - 55 °C
RDS(on) - On-Resistance (Ω)
TC = 25 °C
80
gfs - Transconductance (S)
TC = - 55 °C
0
60
TC = 125 °C
40
20
0.020
0.015
0.010
VGS = 4.5 V
0.005
VGS = 10 V
0
0.000
0
5
10
15
ID - Drain Current (A)
20
25
0
10
20
30
40
50
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
10
3000
ID = 16 A
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
2500
Ciss
2000
1500
1000
Crss
500
Coss
8
VDS = 20 V
6
4
2
0
0
0
10
20
30
VDS - Drain-to-Source Voltage (V)
Capacitance
S12-2275-Rev. B, 24-Sep-12
40
0
10
20
30
40
Qg - Total Gate Charge (nC)
50
Gate Charge
Document Number: 67714
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ858EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 14 A
VGS = 10 V
1.8
10
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.1
1.5
VGS = 4.5 V
1.2
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.9
0.6
- 50 - 25
0
25
50
75
100
125
150
0.001
0.0
175
0.2
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1.2
Source Drain Diode Forward Voltage
0.10
0.4
0.08
0.0
VGS(th) - Variance (V)
RDS(on) - On-Resistance (Ω)
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0.06
0.04
- 0.4
ID = 5 mA
- 0.8
0.02
ID = 250 μA
TJ = 150 °C
TJ = 25 °C
0.00
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
- 1.2
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
VDS - Drain-to-Source Voltage (V)
54
52
ID = 1 mA
50
48
46
44
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S12-2275-Rev. B, 24-Sep-12
Document Number: 67714
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ858EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
100 μs
Limited by RDS(on)*
1 ms
10
10 ms
100 ms
1 s, 10 s, DC
1
TC = 25 °C
Single Pulse
0.1
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 68 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-2275-Rev. B, 24-Sep-12
Document Number: 67714
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ858EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67714.
S12-2275-Rev. B, 24-Sep-12
Document Number: 67714
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000